Measurement and Statistical Analysis of Single-Molecule Current–Voltage Characteristics, Transition Voltage Spectroscopy, and Tunneling Barrier Height

2011 ◽  
Vol 133 (47) ◽  
pp. 19189-19197 ◽  
Author(s):  
Shaoyin Guo ◽  
Joshua Hihath ◽  
Ismael Díez-Pérez ◽  
Nongjian Tao
Keyword(s):  
Statistical Analysis ◽  
Barrier Height ◽  
Single Molecule ◽  
Tunneling Barrier ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Transition Voltage ◽  
Transition Voltage Spectroscopy

Current–Voltage Characteristics and Transition Voltage Spectroscopy of Individual Redox Proteins

2012 ◽  
Vol 134 (50) ◽  
pp. 20218-20221 ◽  
Author(s):  
Juan M. Artés ◽  
Montserrat López-Martínez ◽  
Arnaud Giraudet ◽  
Ismael Díez-Pérez ◽  
Fausto Sanz ◽  
...  
Keyword(s):  
Redox Proteins ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Transition Voltage ◽  
Transition Voltage Spectroscopy

Electronic transport, transition-voltage spectroscopy, and the Fano effect in single molecule junctions composed of a biphenyl molecule attached to metallic and semiconducting carbon nanotube electrodes

2014 ◽  
Vol 16 (36) ◽  
pp. 19602-19607 ◽  
Author(s):  
Carlos Alberto Brito da Silva Júnior ◽  
José Fernando Pereira Leal ◽  
Vicente Ferrer Pureza Aleixo ◽  
Felipe A. Pinheiro ◽  
Jordan Del Nero
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Single Molecule ◽  
Electronic Transport ◽  
Fano Effect ◽  
Single Molecule Junctions ◽  
Transition Voltage ◽  
Transport Transition ◽  
Transition Voltage Spectroscopy

We investigate electronic transport in semiconductor–molecule–metal junctions consisting of a biphenyl molecule attached to a p-doped semiconductor and metallic carbon nanotubes.

Tunneling barrier in nanoparticle junctions of La2/3(Ca,Sr)1/3MnO3: Nonlinear current–voltage characteristics

2003 ◽  
Vol 93 (10) ◽  
pp. 6305-6310 ◽  
Author(s):  
D. Niebieskikwiat ◽  
R. D. Sánchez ◽  
D. G. Lamas ◽  
A. Caneiro ◽  
L. E. Hueso ◽  
...  
Keyword(s):  
Tunneling Barrier ◽  
Current Voltage ◽  
Current Voltage Characteristics

CURRENT–VOLTAGE CHARACTERISTICS OF THERMALLY ANNEALED Ni/n-GaAs SCHOTTKY CONTACTS

2018 ◽  
Vol 25 (04) ◽  
pp. 1850082 ◽  
Author(s):  
NEZIR YILDIRIM ◽  
ABDULMECIT TURUT ◽  
HULYA DOGAN
Keyword(s):  
Barrier Height ◽  
Forward Bias ◽  
Schottky Contacts ◽  
Current Voltage Characteristic ◽  
Gaussian Distributions ◽  
Linear Behavior ◽  
Current Voltage ◽  
Device Applications ◽  
Barrier Type ◽  
Current Voltage Characteristics

The Schottky barrier type Ni/[Formula: see text]-GaAs contacts fabricated by us were thermally annealed at 600[Formula: see text]C and 700[Formula: see text]C for 1[Formula: see text]min. The apparent barrier height [Formula: see text] and ideality factor of the diodes were calculated from the forward bias current–voltage characteristic in 60–320[Formula: see text]K range. The [Formula: see text] values for the nonannealed and 600[Formula: see text]C and 700[Formula: see text]C annealed diodes were obtained as 0.80, 0.81 and 0.67[Formula: see text]eV at 300[Formula: see text]K, respectively. Thus, it has been concluded that the reduced barrier due to the thermal annealing at 700[Formula: see text]C promises some device applications. The current preferentially flows through the lowest barrier height (BH) with the temperature due to the BH inhomogeneities. Therefore, it was seen that the [Formula: see text] versus [Formula: see text] plots for the nonannealed and annealed diodes showed the linear behavior according to Gaussian distributions.

Quantum-Cross Tunneling Junction for High Density Memory

2006 ◽  
Vol 961 ◽  
Author(s):  
Hideo Kaiju ◽  
Kenji Kondo ◽  
Akira Ishibashi
Keyword(s):  
Transport Properties ◽  
Barrier Height ◽  
Current Density ◽  
Tunnel Barrier ◽  
Ribbon Thickness ◽  
Barrier Thickness ◽  
Current Voltage ◽  
Thick Barrier ◽  
Current Voltage Characteristics ◽  
Interesting Behavior

ABSTRACTWe calculated transport properties of edge-to-edge quantum cross structure that consists of two metal nano-ribbons having edge-to-edge configuration with a tunnel barrier and showed current-voltage characteristics depending on the metal-ribbon thickness (5-30 nm), the barrier height (0.5-1.5 eV) and the barrier thickness (0.5-1.0 nm). Interesting behavior of transport properties is that the metal-ribbon thickness affects the current density due to the quantization of nano-ribbon and also the current density, being dependent on the barrier height and the barrier thickness, decreases with high and thick barrier. These calculated results indicate that we can precisely obtain the information on the material sandwiched between two electrodes, such as the barrier height and the barrier thickness, by a fit of experimental data to our derived equation, and these approaches result in a distinction between the sandwiched material and the electrode.

scholarly journals Проверка применимости закона полевой эмиссии к исследованию многоострийных полевых эмиттеров методом анализа степени предэкспоненциального множителя напряжения

2019 ◽  
Vol 45 (18) ◽  
pp. 13
Author(s):  
Е.О. Попов ◽  
А.Г. Колосько ◽  
С.В. Филиппов
Keyword(s):  
Experimental Data ◽  
Carbon Nanotubes ◽  
Statistical Analysis ◽  
Field Emission ◽  
Power Law ◽  
Constant Voltage ◽  
Current Voltage ◽  
Power Law Exponent ◽  
Emission Mode ◽  
Current Voltage Characteristics

A method for testing the compliance of experimental current-voltage characteristics with a cold field emission mode is described. The method is based on the variation of voltage power-law exponent in the semilogarithmic coordinates ln (I/U^k) vs1/U, as well as the statistical analysis of experimental data fluctuations. It is shown that the current-voltage characteristics obtained using the high-voltage fast-scanning technique have a better fit to the field emission law than the characteristics given by a slow scanning with a constant voltage. A multi-tip nanocomposite emitter based on carbon nanotubes was taken as a sample. For processing experimental data, it was proposed to use modified Fowler-Nordheim coordinates with a voltage power-law exponent of 1.24.

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