Tunneling barrier in nanoparticle junctions of La2/3(Ca,Sr)1/3MnO3: Nonlinear current–voltage characteristics

2003 ◽  
Vol 93 (10) ◽  
pp. 6305-6310 ◽  
Author(s):  
D. Niebieskikwiat ◽  
R. D. Sánchez ◽  
D. G. Lamas ◽  
A. Caneiro ◽  
L. E. Hueso ◽  
...  
Keyword(s):  
Tunneling Barrier ◽  
Current Voltage ◽  
Current Voltage Characteristics

Current‐voltage characteristics of In0.53Ga0.47As/In0.52Al0.48As resonant tunneling barrier structures grown by molecular beam epitaxy

1988 ◽  
Vol 52 (4) ◽  
pp. 314-316 ◽  
Author(s):  
Yoshihiro Sugiyama ◽  
Tsuguo Inata ◽  
Shunichi Muto ◽  
Yoshiaki Nakata ◽  
Satoshi Hiyamizu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Resonant Tunneling ◽  
Molecular Beam ◽  
Tunneling Barrier ◽  
Current Voltage ◽  
Current Voltage Characteristics

scholarly journals Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1401
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko
Keyword(s):  
High Performance ◽  
Conduction Mechanism ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Limited Conduction

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

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