Organic molecular films on gold versus conducting polymer: Influence of injection barrier height and morphology on current–voltage characteristics

2003 ◽  
Vol 82 (14) ◽  
pp. 2281-2283 ◽  
Author(s):  
N. Koch ◽  
A. Elschner ◽  
J. Schwartz ◽  
A. Kahn
Keyword(s):  
Barrier Height ◽  
Conducting Polymer ◽  
Molecular Films ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Injection Barrier

CURRENT–VOLTAGE CHARACTERISTICS OF THERMALLY ANNEALED Ni/n-GaAs SCHOTTKY CONTACTS

2018 ◽  
Vol 25 (04) ◽  
pp. 1850082 ◽  
Author(s):  
NEZIR YILDIRIM ◽  
ABDULMECIT TURUT ◽  
HULYA DOGAN
Keyword(s):  
Barrier Height ◽  
Forward Bias ◽  
Schottky Contacts ◽  
Current Voltage Characteristic ◽  
Gaussian Distributions ◽  
Linear Behavior ◽  
Current Voltage ◽  
Device Applications ◽  
Barrier Type ◽  
Current Voltage Characteristics

The Schottky barrier type Ni/[Formula: see text]-GaAs contacts fabricated by us were thermally annealed at 600[Formula: see text]C and 700[Formula: see text]C for 1[Formula: see text]min. The apparent barrier height [Formula: see text] and ideality factor of the diodes were calculated from the forward bias current–voltage characteristic in 60–320[Formula: see text]K range. The [Formula: see text] values for the nonannealed and 600[Formula: see text]C and 700[Formula: see text]C annealed diodes were obtained as 0.80, 0.81 and 0.67[Formula: see text]eV at 300[Formula: see text]K, respectively. Thus, it has been concluded that the reduced barrier due to the thermal annealing at 700[Formula: see text]C promises some device applications. The current preferentially flows through the lowest barrier height (BH) with the temperature due to the BH inhomogeneities. Therefore, it was seen that the [Formula: see text] versus [Formula: see text] plots for the nonannealed and annealed diodes showed the linear behavior according to Gaussian distributions.

Quantum-Cross Tunneling Junction for High Density Memory

2006 ◽  
Vol 961 ◽  
Author(s):  
Hideo Kaiju ◽  
Kenji Kondo ◽  
Akira Ishibashi
Keyword(s):  
Transport Properties ◽  
Barrier Height ◽  
Current Density ◽  
Tunnel Barrier ◽  
Ribbon Thickness ◽  
Barrier Thickness ◽  
Current Voltage ◽  
Thick Barrier ◽  
Current Voltage Characteristics ◽  
Interesting Behavior

ABSTRACTWe calculated transport properties of edge-to-edge quantum cross structure that consists of two metal nano-ribbons having edge-to-edge configuration with a tunnel barrier and showed current-voltage characteristics depending on the metal-ribbon thickness (5-30 nm), the barrier height (0.5-1.5 eV) and the barrier thickness (0.5-1.0 nm). Interesting behavior of transport properties is that the metal-ribbon thickness affects the current density due to the quantization of nano-ribbon and also the current density, being dependent on the barrier height and the barrier thickness, decreases with high and thick barrier. These calculated results indicate that we can precisely obtain the information on the material sandwiched between two electrodes, such as the barrier height and the barrier thickness, by a fit of experimental data to our derived equation, and these approaches result in a distinction between the sandwiched material and the electrode.

Metal/P-GaN Contacts on AlGaN/GaN Heterostructures for Normally-Off HEMTs

2016 ◽  
Vol 858 ◽  
pp. 1170-1173 ◽  
Author(s):  
Giuseppe Greco ◽  
Ferdinando Iucolano ◽  
Filippo Giannazzo ◽  
Salvatore di Franco ◽  
Domenico Corso ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Barrier Height ◽  
Transport Mechanism ◽  
Carrier Transport ◽  
Schottky Barrier Height ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Thermionic Field Emission ◽  
Current Voltage Characteristics ◽  
Gan Heterostructure

In this paper, the electrical properties of different metal/p-GaN contacts (Ti/Al, TiN/Ti/Al and Ni/Au) have been investigated to get a deeper understanding of the behavior of p-GaN/AlGaN/GaN heterostructures for normally-off HEMTs. In particular, the study of the temperature dependent current-voltage characteristics allowed to identify the dominant carrier transport mechanism at the metal/p-GaN interface (Thermionic Field Emission). From the fit of the experimental current-voltage data it was possible to determine the Schottky barrier height values for the three systems, 2.08 eV (Ti/Al), 1.57 eV (TiN/Ti/Al) and 1.89 eV (Ni/Au). Hence, choosing the highest barrier height contact (Ti/Al) as gate electrode on a p-GaN/AlGaN/GaN heterostructure, optimized based on simulations, allowed to obtain devices with a normally-off behavior and a positive Vth of +1.3 V.

Capacitance–voltage and current–voltage characteristics of Au Schottky contact on n-type Si with a conducting polymer

2009 ◽  
Vol 42 (16) ◽  
pp. 165104 ◽  
Author(s):  
Yow-Jon Lin ◽  
Bo-Chieh Huang ◽  
Yi-Chun Lien ◽  
Ching-Ting Lee ◽  
Chia-Lung Tsai ◽  
...  
Keyword(s):  
Conducting Polymer ◽  
Schottky Contact ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Current Voltage Characteristics

Current-Voltage Measurements as a Function of Applied Tip Force on Pentacene by Conducting Probe Microscopy

2000 ◽  
Vol 660 ◽  
Author(s):  
Serkan Zorba ◽  
Neil J. Watkins ◽  
Li Yan ◽  
Yongli Gao
Keyword(s):  
Organic Semiconductor ◽  
Electrical Contact ◽  
Hole Injection ◽  
Atomic Force ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Tunneling Phenomenon ◽  
Injection Barrier ◽  
Reproducible Manner ◽  
Increasing Load

ABSTRACTCurrent-voltage characteristics of organic semiconductor pentacene were studied as a function of applied tip force using conducting probe atomic force microscope. I-V measurements were performed on 150Å and 300Å pentacene films. No electrical contact was observed until 20 nN of tip force for the 150Å film coverage, whereas electrical contact was established easily with a few nN of tip force values for the 300Å film coverage. On both films, once an electrical contact was obtained, the conductance was observed to increase with increasing load. At about 50 nN and higher loads we lost electrical contact in both cases in a reproducible manner. While I-V on 150Å pentacene film showed a rectifying behavior, I-V on 300Å pentacene looked like typical I-V curves of tunneling phenomenon. From these measurements, we have estimated a hole injection barrier of about 0.76 eV and a band gap of about 2.00 eV for pentacene. These results are in agreement with those in the literature.

Inhomogeneous barrier height effect on the current–voltage characteristics of an Au/n-InP Schottky diode

2015 ◽  
Vol 36 (12) ◽  
pp. 124002 ◽  
Author(s):  
Kamal Zeghdar ◽  
Lakhdar Dehimi ◽  
Achour Saadoune ◽  
Nouredine Sengouga
Keyword(s):  
Barrier Height ◽  
Schottky Diode ◽  
Current Voltage ◽  
Current Voltage Characteristics
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