Atomic Layer Deposition of TiO2from TiI4and H2O onto SiO2Surfaces:  Ab Initio Calculations of the Initial Reaction Mechanisms

2007 ◽  
Vol 129 (13) ◽  
pp. 3863-3878 ◽  
Author(s):  
Zheng Hu ◽  
C. Heath Turner
Keyword(s):  
Atomic Layer Deposition ◽  
Ab Initio Calculations ◽  
Ab Initio ◽  
Reaction Mechanisms ◽  
Atomic Layer ◽  
Initial Reaction ◽  
Layer Deposition

scholarly journals Mechanism for Al2O3 Atomic Layer Deposition on LiMn2O4 from In Situ Measurements and Ab Initio Calculations

Chem ◽  
2018 ◽  
Vol 4 (10) ◽  
pp. 2418-2435 ◽  
Author(s):  
Lin Chen ◽  
Robert E. Warburton ◽  
Kan-Sheng Chen ◽  
Joseph A. Libera ◽  
Christopher Johnson ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Ab Initio Calculations ◽  
Ab Initio ◽  
Atomic Layer ◽  
In Situ Measurements ◽  
Layer Deposition

Reaction mechanisms for atomic layer deposition of aluminum oxide on semiconductor substrates

2012 ◽  
Vol 30 (1) ◽  
pp. 01A127 ◽  
Author(s):  
Annelies Delabie ◽  
Sonja Sioncke ◽  
Jens Rip ◽  
Sven Van Elshocht ◽  
Geoffrey Pourtois ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Aluminum Oxide ◽  
Reaction Mechanisms ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Semiconductor Substrates

Initial reaction mechanism of nitrogen-doped zinc oxide with atomic layer deposition

2009 ◽  
Vol 517 (15) ◽  
pp. 4355-4359 ◽  
Author(s):  
Lin Dong ◽  
Qing-Qing Sun ◽  
Yu Shi ◽  
Hao-Wen Guo ◽  
Han Liu ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Reaction Mechanism ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Initial Reaction ◽  
Nitrogen Doped ◽  
Layer Deposition

scholarly journals In Situ Microgravimetric Study of Ion Exchanges in the Ternary Cu-In-S System Prepared by Atomic Layer Deposition

Materials ◽  
2020 ◽  
Vol 13 (3) ◽  
pp. 645
Author(s):  
Harold Le Tulzo ◽  
Nathanaelle Schneider ◽  
Frédérique Donsanti
Keyword(s):  
Atomic Layer Deposition ◽  
Reaction Mechanisms ◽  
Atomic Layer ◽  
Side Reactions ◽  
Chemical Surface ◽  
Copper Indium Disulfide ◽  
Layer Deposition ◽  
Copper Indium ◽  
Gas Phase Ion

Reaction mechanisms during the growth of multinary compounds by atomic layer deposition can be complex, especially for sulfide materials. For instance, the deposition of copper indium disulfide (CuInS2) shows a non-direct correlation between the cycle ratio, the growth per cycle of each binary growth cycles, i.e., CuxS and In2S3, and the film composition. This evidences side reactions that compete with the direct Atomic Layer Deposition (ALD) growth reactions and makes the deposition of large films very challenging. To develop a robust upscalable recipe, it is essential to understand the chemical surface reactions. In this study, reaction mechanisms in the Cu-In-S ternary system were investigated in-situ by using a quartz crystal microbalance system to monitor mass variations. Pure binary indium sulfide (In2S3) and copper sulfide (CuxS) thin film depositions on Al2O3 substrate were first studied. Then, precursors were transported to react on CuxS and In2S3 substrates. In this paper, gas-phase ion exchanges are discussed based on the recorded mass variations. A cation exchange between the copper precursor and the In2S3 is highlighted, and a solution to reduce it by controlling the thickness deposited for each stack of binary materials during the CuInS2 deposition is finally proposed.

Atomic Layer Deposition of GeTe and Ge–Sb–Te Films Using HGeCl3, Sb(OC2H5)3, and {(CH3)3Si}2Te and Their Reaction Mechanisms

2017 ◽  
Vol 29 (19) ◽  
pp. 8065-8072 ◽  
Author(s):  
Taehong Gwon ◽  
Taeyong Eom ◽  
Sijung Yoo ◽  
Chanyoung Yoo ◽  
Eui-sang Park ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Reaction Mechanisms ◽  
Atomic Layer ◽  
Layer Deposition

Reaction mechanisms during plasma-assisted atomic layer deposition of metal oxides: A case study for Al2O3

2008 ◽  
Vol 103 (10) ◽  
pp. 103302 ◽  
Author(s):  
S. B. S. Heil ◽  
J. L. van Hemmen ◽  
M. C. M. van de Sanden ◽  
W. M. M. Kessels
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Oxides ◽  
Reaction Mechanisms ◽  
Atomic Layer ◽  
Layer Deposition

(Invited) Chemisorption Reaction Mechanisms for Atomic Layer Deposition of High-k Oxides on High Mobility Channels

2019 ◽  
Vol 33 (2) ◽  
pp. 343-353 ◽  
Author(s):  
A. Delabie ◽  
Sonja Sioncke ◽  
S. Van Elshocht ◽  
Matty Caymax ◽  
Geoffrey Pourtois ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Reaction Mechanisms ◽  
High Mobility ◽  
Atomic Layer ◽  
Layer Deposition ◽  
High K
Sign in / Sign up

Export Citation Format

Share Document