In Situ Microgravimetric Study of Ion Exchanges in the Ternary Cu-In-S System Prepared by Atomic Layer Deposition

Reaction mechanisms during the growth of multinary compounds by atomic layer deposition can be complex, especially for sulfide materials. For instance, the deposition of copper indium disulfide (CuInS2) shows a non-direct correlation between the cycle ratio, the growth per cycle of each binary growth cycles, i.e., CuxS and In2S3, and the film composition. This evidences side reactions that compete with the direct Atomic Layer Deposition (ALD) growth reactions and makes the deposition of large films very challenging. To develop a robust upscalable recipe, it is essential to understand the chemical surface reactions. In this study, reaction mechanisms in the Cu-In-S ternary system were investigated in-situ by using a quartz crystal microbalance system to monitor mass variations. Pure binary indium sulfide (In2S3) and copper sulfide (CuxS) thin film depositions on Al2O3 substrate were first studied. Then, precursors were transported to react on CuxS and In2S3 substrates. In this paper, gas-phase ion exchanges are discussed based on the recorded mass variations. A cation exchange between the copper precursor and the In2S3 is highlighted, and a solution to reduce it by controlling the thickness deposited for each stack of binary materials during the CuInS2 deposition is finally proposed.

Metal-Doped Copper Indium Disulfide Heterostructure: Environment-Friendly Hole-Transporting Material toward Photovoltaic Application in Organic-Inorganic Perovskite Solar Cell

In this plan, we use Praseodymium metal-doped copper indium disulfide (Pr-doped CIS) heterostructure as hole-transporting materials (HTMs) in the FTO/TiO2/Perovskite absorber/HTM/ Au device. And photovoltaic performance of these Pr-doped CIS heterostructure was investigated in the fabrication of the organic-inorganic perovskite solar cells (organic-inorganic PSCs).

Copper Indium Disulfide Quantum Dot Light Emitting Diodes for Display and Lighting Technologies

While significant advances in the development of quantum dot light emitting diodes (QLEDs) have been reported, these devices are primarily based on cadmium chalcogenide quantum dot (QD) materials. Both environmental and health concerns arise due to the toxicity of cadmium and consequently, alternative less toxic QDs must be developed for large scale QLED applications such as display and solid state lighting technologies. In this work, copper indium disulfide (CIS) was investigated as an alternative QD material for QLED applications. Through experimentation with material synthesis and device fabrication, this project aimed to develop high performing CIS QLEDs. Several synthetic approaches were experimented with and it was determined that the injection of shorter chain 1-octanethoil as sulfur precursor with extensive shell reaction time resulted in highly luminescent QDs. Single color QLEDs were fabricated based on typical device structure, using highly luminescent synthesized CIS QDs as the emissive layer in multilayer devices. Varying the shell reaction time of QDs in order to vary shell thickness resulted in significant differences in device performance. Using thicker shell QDs, high performing devices were obtained with the best performing QLEDs displaying a high peak current efficiency of 14.7 cd/A and high external quantum efficiency of 5.2%.