Reaction mechanisms during plasma-assisted atomic layer deposition of metal oxides: A case study for Al2O3

2008 ◽  
Vol 103 (10) ◽  
pp. 103302 ◽  
Author(s):  
S. B. S. Heil ◽  
J. L. van Hemmen ◽  
M. C. M. van de Sanden ◽  
W. M. M. Kessels
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Oxides ◽  
Reaction Mechanisms ◽  
Atomic Layer ◽  
Layer Deposition

Interface Studies of Metal Oxides Grown Directly on Hybrid Perovskite by Atomic Layer Deposition

2019 ◽  
Author(s):  
Claire Burgess ◽  
Farzad Mardekatani Asl ◽  
Valerio Zardetto ◽  
Herbert Lifka ◽  
Sjoerd Veenstra ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Oxides ◽  
Atomic Layer ◽  
Hybrid Perovskite ◽  
Layer Deposition

scholarly journals ALD coating of centrifugally spun polymeric fibers and postannealing: case study for nanotubular TiO2 photocatalyst

2021 ◽  
Author(s):  
Martina Rihova ◽  
Oksana Yurkevich ◽  
Martin Motola ◽  
Ludek Hromadko ◽  
Zdeněk Spotz ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Vinyl Pyrrolidone ◽  
Tio2 Photocatalyst ◽  
Polymeric Fibers ◽  
Layer Deposition ◽  
Centrifugal Spinning ◽  
Poly Vinyl Pyrrolidone

This work describes the synthesis of highly photocatalytically active TiO2 tubes (TiTBs) by combining centrifugal spinning and atomic layer deposition (ALD). Poly(vinyl pyrrolidone) (PVP) fibers were first produced by centrifugal...

Chemical resistance of thin film materials based on metal oxides grown by atomic layer deposition

2013 ◽  
Vol 542 ◽  
pp. 219-224 ◽  
Author(s):  
Väino Sammelselg ◽  
Ivan Netšipailo ◽  
Aleks Aidla ◽  
Aivar Tarre ◽  
Lauri Aarik ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Metal Oxides ◽  
Chemical Resistance ◽  
Atomic Layer ◽  
Layer Deposition

Reaction mechanisms for atomic layer deposition of aluminum oxide on semiconductor substrates

2012 ◽  
Vol 30 (1) ◽  
pp. 01A127 ◽  
Author(s):  
Annelies Delabie ◽  
Sonja Sioncke ◽  
Jens Rip ◽  
Sven Van Elshocht ◽  
Geoffrey Pourtois ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Aluminum Oxide ◽  
Reaction Mechanisms ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Semiconductor Substrates

Atomic Layer Deposition for Improved Stability of Catalysts for the Conversion of Biomass to Chemicals and Fuels

2011 ◽  
Vol 1366 ◽  
Author(s):  
Monika K. Wiedmann ◽  
Yomaira J. Pagan-Torres ◽  
Mark H. Tucker ◽  
James A. Dumesic ◽  
T. F. Kuech
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Oxides ◽  
Rate Constant ◽  
Flow Reactor ◽  
Atomic Layer ◽  
Deactivation Rate ◽  
Layer Deposition ◽  
Improved Stability ◽  
Deactivation Rate Constant ◽  
Acid Catalyzed

ABSTRACTAtomic layer deposition (ALD) has been used to coat SBA-15 and functionalized SBA-15 with various metal oxides. Use of SBA-15 coated with 4-10 ALD cycles of titania, alumina, niobia, or zirconia in the acid-catalyzed dehydration of fructose to 5-hydroxymethylfurfural (HMF) resulted in 24-57% conversion, with 0-22% selectivity, at 130 °C with 2 wt % fructose in 4:1 THF:H2O. Propylsulfonic acid functionalized SBA-15 (SBA-15-PrSO3H) had a 25% conversion and 48% selectivity for HMF under the same conditions. SBA-15-PrSO3H was also coated with 2 ALD cycles of titania followed by 8 ALD cycles silica. The deactivation rate constant for SBA-15-PrSO3H was 2.7 x 10-2 h-1 for the dehydration of fructose to HMF in a flow reactor at 130 °C with a feed of 2 wt % fructose in 4:1 THF:H2O. In comparison, the deactivation rate constant for the ALD coated SBA-15-PrSO3H-ALD was 7.9 x 10-3 h-1.

Direct patterning of metal oxides by hard templates and atomic layer deposition

2013 ◽  
Vol 10 (8/9) ◽  
pp. 692 ◽  
Author(s):  
Hyunchul Kim ◽  
Changdeuck Bae ◽  
Hyun Suk Jung ◽  
Jang Sik Lee ◽  
Hyunjung Shin
Keyword(s):  
Atomic Layer Deposition ◽  
Metal Oxides ◽  
Atomic Layer ◽  
Direct Patterning ◽  
Layer Deposition

scholarly journals In Situ Microgravimetric Study of Ion Exchanges in the Ternary Cu-In-S System Prepared by Atomic Layer Deposition

Materials ◽  
2020 ◽  
Vol 13 (3) ◽  
pp. 645
Author(s):  
Harold Le Tulzo ◽  
Nathanaelle Schneider ◽  
Frédérique Donsanti
Keyword(s):  
Atomic Layer Deposition ◽  
Reaction Mechanisms ◽  
Atomic Layer ◽  
Side Reactions ◽  
Chemical Surface ◽  
Copper Indium Disulfide ◽  
Layer Deposition ◽  
Copper Indium ◽  
Gas Phase Ion

Reaction mechanisms during the growth of multinary compounds by atomic layer deposition can be complex, especially for sulfide materials. For instance, the deposition of copper indium disulfide (CuInS2) shows a non-direct correlation between the cycle ratio, the growth per cycle of each binary growth cycles, i.e., CuxS and In2S3, and the film composition. This evidences side reactions that compete with the direct Atomic Layer Deposition (ALD) growth reactions and makes the deposition of large films very challenging. To develop a robust upscalable recipe, it is essential to understand the chemical surface reactions. In this study, reaction mechanisms in the Cu-In-S ternary system were investigated in-situ by using a quartz crystal microbalance system to monitor mass variations. Pure binary indium sulfide (In2S3) and copper sulfide (CuxS) thin film depositions on Al2O3 substrate were first studied. Then, precursors were transported to react on CuxS and In2S3 substrates. In this paper, gas-phase ion exchanges are discussed based on the recorded mass variations. A cation exchange between the copper precursor and the In2S3 is highlighted, and a solution to reduce it by controlling the thickness deposited for each stack of binary materials during the CuInS2 deposition is finally proposed.

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