The Solubility Effect in Solvents of Low Dielectric Constant. I. The Solubility of Tetrabutylammonium Iodide in Benzene in the Presence of Tetrabutylammonium Picrate and Nitrate

1941 ◽  
Vol 63 (3) ◽  
pp. 862-864 ◽  
Author(s):  
Arthur A. Vernon ◽  
W. F. Luder ◽  
Mario Giella
Keyword(s):  
Dielectric Constant ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Tetrabutylammonium Picrate ◽  
Tetrabutylammonium Iodide

Conductances of potassium chloride and tetrabutyl ammonium picrate in dioxan-water mixtures at pressures up to 2500 bars

1970 ◽  
Vol 23 (5) ◽  
pp. 905 ◽  
Author(s):  
PJ Pearce ◽  
W Strauss
Keyword(s):  
Dielectric Constant ◽  
Potassium Chloride ◽  
Dielectric Constants ◽  
Low Dielectric Constant ◽  
Solvent Concentration ◽  
Electrolytic Conductance ◽  
Low Dielectric ◽  
Tetrabutyl Ammonium ◽  
Finite Concentration ◽  
Tetrabutylammonium Picrate

The electrolytic conductance of solutions of potassium chloride and tetrabutyl- ammonium picrate over a range of concentrations have been measured in dioxan-water mixtures containing 0, 25, 50, 70, and 80% dioxan at 25� and pressures up to 1000 and 2500 bars respectively for the two solutes. The solvent concentration range corresponds to a range of dielectric constants of 78.3 (for water) to 11.98 (80% dioxan). The association of KCl in solutions of low dielectric constant is reduced by increasing pressure, so that the conductances of the solutions of finite concentration are not reduced as much by pressure as at infinite dilution. In contrast to this, the solutions of the tetrabutylammonium picrate are wholly dissociated even in very low dielectric constant solvents, as is shown by the limited concentration dependence of the conductance pressure characteristics.

Structire, Properties, and Process Characteristics of Low-K Materials Prepared by PECVD

1999 ◽  
Vol 565 ◽  
Author(s):  
Y. Shimogaki ◽  
S. W. Lim ◽  
E. G. Loh ◽  
Y. Nakano ◽  
K. Tada ◽  
...  
Keyword(s):  
Growth Rate ◽  
Dielectric Constant ◽  
Gas Flow ◽  
Structural Changes ◽  
Silicon Oxide ◽  
Reactive Species ◽  
Low Dielectric Constant ◽  
Low Dielectric ◽  
Step Coverage ◽  
Low K

AbstractLow dielectric constant F-doped silicon oxide films (SiO:F) can be prepared by adding fluorine source, like as CF4 to the conventional PECVD processes. We could obtain SiO:F films with dielectric constant as low as 2.6 from the reaction mixture of SiH4/N2 O/CF4. The structural changes of the oxides were sensitively detected by Raman spectroscopy. The three-fold ring and network structure of the silicon oxides were selectively decreased by adding fluorine into the film. These structural changes contribute to the decrease ionic polarization of the film, but it was not the major factor for the low dielectric constant. The addition of fluorine was very effective to eliminate the Si-OH in the film and the disappearance of the Si-OH was the key factor to obtain low dielectric constant. A kinetic analysis of the process was also performed to investigate the reaction mechanism. We focused on the effect of gas flow rate, i.e. the residence time of the precursors in the reactor, on growth rate and step coverage of SiO:F films. It revealed that there exists two species to form SiO:F films. One is the reactive species which contributes to increase the growth rate and the other one is the less reactive species which contributes to have uniform step coverage. The same approach was made on the PECVD process to produce low-k C:F films from C2F4, and we found ionic species is the main precursor to form C:F films.

Defect free monolayer and bilayer graphene exfoliated by solvent with low dielectric constant

2020 ◽  
Author(s):  
Vedanki ◽  
Chandrabhan Dohare ◽  
Pawan KumarSrivastava ◽  
Premlata Yadav ◽  
Subhasis Ghosh
Keyword(s):  
Dielectric Constant ◽  
Bilayer Graphene ◽  
Low Dielectric Constant ◽  
Low Dielectric
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