The Atmospheric Thermal Oxidation of Nitric Oxide

William A. Glasson; Charles S. Tuesday

doi:10.1021/ja00902a008

Atmospheric thermal oxidation of nitric oxide in the presence of dienes

Environmental Science & Technology ◽

10.1021/es60044a003 ◽

1970 ◽

Vol 4 (9) ◽

pp. 752-757 ◽

Cited By ~ 18

Author(s):

Paul M. Yavorsky ◽

Nestor J. Mazzocco ◽

Gerald D. Rutledge ◽

Everett Gorin

Keyword(s):

Nitric Oxide ◽

Thermal Oxidation

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Investigation of Nitrided Atomic-Layer-Deposited Oxides in 4H-SiC Capacitors and MOSFETs

Materials Science Forum ◽

10.4028/www.scientific.net/msf.740-742.707 ◽

2013 ◽

Vol 740-742 ◽

pp. 707-710 ◽

Cited By ~ 3

Author(s):

Sarah Kay Haney ◽

Veena Misra ◽

Daniel J. Lichtenwalner ◽

Anant K. Agarwal

Keyword(s):

Nitric Oxide ◽

Thermal Oxidation ◽

Conduction Band ◽

Field Effect ◽

Atomic Layer ◽

Gate Oxides ◽

Thermal Oxide ◽

Nitrogen Concentrations ◽

Peak Field

MOSFETs and capacitors have been fabricated to investigate the atomic layer depositon (ALD) of SiO2onto SiC compared to thermal oxidation of SiC. Devices were fabricated on 4H-SiC with the following oxidation treatments: thermal oxidation at 1175°C, thermal oxidation at 1175°C followed by a nitric oxide (NO) anneal at 1175°C, and ALD of SiC at 150°C followed by an NO post oxidation anneal (POA) at 1175°C. ALD of the SiO2was performed using 3-aminopropyltriethoxysiliane (3-APTES), ozone and water. Capacitors fabricated with NO annealed ALD oxide and thermal oxide with NO POA exhibited similar CV behavior and yielded similar Dit of 1e11 at 0.5 eV from the conduction band. MOSFETs fabricated with NO PDA ALD oxide exhibited peak field effect mobilities ranging from 32 – 40.5 cm2/Vs compared to 30 –34.5 cm2/Vs for the MOSFETs with NO annealed thermal oxide. The higher mobilities exhibited by the ALD gate oxides were linked through SIMS to higher nitrogen concentrations at the SiO2/SiC interface.

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Mutually Promoted Thermal Oxidation of Nitric Oxide and Organic Compounds

Industrial & Engineering Chemistry Research ◽

10.1021/ie00044a040 ◽

1995 ◽

Vol 34 (5) ◽

pp. 1882-1888 ◽

Cited By ~ 32

Author(s):

Klaus Hjuler ◽

Peter Glarborg ◽

Kim Dam-Johansen

Keyword(s):

Nitric Oxide ◽

Thermal Oxidation ◽

Organic Compounds

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Optimization of sub 3 nm gate dielectrics grown by rapid thermal oxidation in a nitric oxide ambient

Applied Physics Letters ◽

10.1063/1.118389 ◽

1997 ◽

Vol 70 (3) ◽

pp. 384-386 ◽

Cited By ~ 26

Author(s):

Kiran Kumar ◽

Anthony I. Chou ◽

Chuan Lin ◽

Prasenjit Choudhury ◽

Jack C. Lee ◽

...

Keyword(s):

Nitric Oxide ◽

Thermal Oxidation ◽

Gate Dielectrics ◽

Rapid Thermal Oxidation

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Low temperature thermal oxidation of nitric oxide in polluted air

Atmospheric Environment (1967) ◽

10.1016/0004-6981(82)90467-x ◽

1982 ◽

Vol 16 (8) ◽

pp. 1957-1972 ◽

Cited By ~ 17

Author(s):

Oliver Lindqvist ◽

Evert Ljungström ◽

Roger Svensson

Keyword(s):

Nitric Oxide ◽

Low Temperature ◽

Thermal Oxidation

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Thermal oxidation of nitric oxide at low concentrations

Transactions of the Faraday Society ◽

10.1039/tf9676300655 ◽

1967 ◽

Vol 63 ◽

pp. 655 ◽

Cited By ~ 14

Author(s):

J. D. Greig ◽

P. G. Hall

Keyword(s):

Nitric Oxide ◽

Thermal Oxidation ◽

Low Concentrations

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Electrical and reliability characteristics of oxynitride gate dielectric grown by diluted steam rapid thermal oxidation and annealed in nitric oxide

Materials Science and Engineering B ◽

10.1016/j.mseb.2003.12.005 ◽

2004 ◽

Vol 107 (3) ◽

pp. 310-316 ◽

Cited By ~ 1

Author(s):

C.H Liu ◽

S.J Chang ◽

J.F Chen ◽

J.S Lee ◽

S.C Chen ◽

...

Keyword(s):

Nitric Oxide ◽

Thermal Oxidation ◽

Gate Dielectric ◽

Rapid Thermal Oxidation ◽

Reliability Characteristics

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Localization of endothelial nitric oxide synthase in the normal and failing human atrial myocardium

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100166397 ◽

1996 ◽

Vol 54 ◽

pp. 786-787

Author(s):

Chi-Ming Wei ◽

Margarita Bracamonte ◽

Shi-Wen Jiang ◽

Richard C. Daly ◽

Christopher G.A. McGregor ◽

...

Keyword(s):

Nitric Oxide ◽

Heart Failure ◽

Nitric Oxide Synthase ◽

Endothelial Nitric Oxide Synthase ◽

Cardiac Tissues ◽

Mammalian Tissues ◽

End Stage Heart Failure ◽

End Stage ◽

Oxide Synthase ◽

Endothelial Nitric Oxide

Nitric oxide (NO) is a potent endothelium-derived relaxing factor which also may modulate cardiomyocyte inotropism and growth via increasing cGMP. While endothelial nitric oxide synthase (eNOS) isoforms have been detected in non-human mammalian tissues, expression and localization of eNOS in the normal and failing human myocardium are poorly defined. Therefore, the present study was designed to investigate eNOS in human cardiac tissues in the presence and absence of congestive heart failure (CHF).Normal and failing atrial tissue were obtained from six cardiac donors and six end-stage heart failure patients undergoing primary cardiac transplantation. ENOS protein expression and localization was investigated utilizing Western blot analysis and immunohistochemical staining with the polyclonal rabbit antibody to eNOS (Transduction Laboratories, Lexington, Kentucky).

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