Optimization of sub 3 nm gate dielectrics grown by rapid thermal oxidation in a nitric oxide ambient

1997 ◽  
Vol 70 (3) ◽  
pp. 384-386 ◽  
Author(s):  
Kiran Kumar ◽  
Anthony I. Chou ◽  
Chuan Lin ◽  
Prasenjit Choudhury ◽  
Jack C. Lee ◽  
...  
Keyword(s):  
Nitric Oxide ◽  
Thermal Oxidation ◽  
Gate Dielectrics ◽  
Rapid Thermal Oxidation

Process Uniformity and Electrical Characteristics of Thin Gate Dielectrics Grown by Ramped-Temperature Transient Rapid Thermal Oxidation of Silicon

1989 ◽  
Vol 146 ◽  
Author(s):  
Mehrdad M. Moslehit ◽  
Ahmad Kermani
Keyword(s):  
Thermal Oxidation ◽  
Gate Dielectrics ◽  
Electrical Characteristics ◽  
Thermal Cycles ◽  
Gate Oxides ◽  
Rapid Thermal Oxidation ◽  
Mos Devices ◽  
Overall Performance ◽  
Process Uniformity ◽  
Transient Thermal

ABSTRACTRapid thermal oxidation (RTO) of Si using transient linearly-ramped-temperature saw-toothed (LRT-ST) and triangular (LRT-TA) thermal cycles has been examined through evaluations of the process uniformity, slip dislocation patterns, and electrical characteristics of MOS devices. The strong effects of the thermal cycle parameters on process uniformity and slips indicate that the overall performance of an RTP tool must be specified both under the steady-state and transient thermal cycles. The electrical characteristics of MOS devices with LRT-grown gate oxides are comparable to those for devices with oxides grown by the trapezoidal thermal cycles.

Rapid Thermal Oxidation of Lightly Doped Silicon in N2O

1994 ◽  
Vol 342 ◽  
Author(s):  
S.C. Sun ◽  
L.S. Wang ◽  
F.L. Yeh ◽  
T.S. Lai ◽  
Y.H. Lin
Keyword(s):  
Growth Rate ◽  
Thermal Oxidation ◽  
Charge Trapping ◽  
Interface State ◽  
Constant Current ◽  
Mos Capacitor ◽  
Rapid Thermal Oxidation ◽  
Doped Silicon ◽  
State Generation ◽  
First Time

ABSTRACTIn this paper, a detailed study is presented for the growth kinetics of rapid thermal oxidation of lightly-doped silicon in N2O and O2 on (100), (110), and (111) oriented substrates. It was found that (110)-oriented Si has the highest growth rate in both N2O and dry O2, and (100) Si has the lowest rate. There is no “crossover” on the growth rate of rapid thermal N2O oxidation between (110) Si and (111) Si as compared to oxides grown in furnace N2O. Pressure dependence of rapid thermal N2O oxidation is reported for the first time. MOS capacitor results show that the low-pressure (40 Torr) N2O-grown oxides have much less interface state generation and charge trapping under constant current stress as compared to oxides grown in either 760 Torr N2O or O2 ambient.

A Novel Process Simulator for Rapid Thermal Oxidation: RAPIDOX

1990 ◽  
Vol 36 (3-4) ◽  
pp. 183-188
Author(s):  
S S Purkar ◽  
S Singh ◽  
A D Shaligram
Keyword(s):  
Thermal Oxidation ◽  
Rapid Thermal Oxidation ◽  
Process Simulator

Oxide Grown on Polycrystal Silicon by Rapid Thermal Oxidation in N[sub 2]O

2006 ◽  
Vol 153 (2) ◽  
pp. G128 ◽  
Author(s):  
Chyuan Haur Kao ◽  
Chao Sung Lai ◽  
Chung Len Lee
Keyword(s):  
Thermal Oxidation ◽  
Rapid Thermal Oxidation
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