Mutually Promoted Thermal Oxidation of Nitric Oxide and Organic Compounds

1995 ◽  
Vol 34 (5) ◽  
pp. 1882-1888 ◽  
Author(s):  
Klaus Hjuler ◽  
Peter Glarborg ◽  
Kim Dam-Johansen
Keyword(s):  
Nitric Oxide ◽  
Thermal Oxidation ◽  
Organic Compounds

Atmospheric thermal oxidation of nitric oxide in the presence of dienes

1970 ◽  
Vol 4 (9) ◽  
pp. 752-757 ◽  
Author(s):  
Paul M. Yavorsky ◽  
Nestor J. Mazzocco ◽  
Gerald D. Rutledge ◽  
Everett Gorin
Keyword(s):  
Nitric Oxide ◽  
Thermal Oxidation

Volatile organic compounds and nitric oxide as responses of a Brazilian tropical species to ozone: the emission profile of young and mature leaves

2017 ◽  
Vol 25 (4) ◽  
pp. 3840-3848 ◽  
Author(s):  
Josiane Valéria Bison ◽  
Poliana Cardoso-Gustavson ◽  
Regina Maria de Moraes ◽  
Giselle da Silva Pedrosa ◽  
Luciano Soares Cruz ◽  
...  
Keyword(s):  
Nitric Oxide ◽  
Volatile Organic Compounds ◽  
Organic Compounds ◽  
Tropical Species ◽  
Emission Profile ◽  
Mature Leaves ◽  
Volatile Organic

Investigation of Nitrided Atomic-Layer-Deposited Oxides in 4H-SiC Capacitors and MOSFETs

2013 ◽  
Vol 740-742 ◽  
pp. 707-710 ◽  
Author(s):  
Sarah Kay Haney ◽  
Veena Misra ◽  
Daniel J. Lichtenwalner ◽  
Anant K. Agarwal
Keyword(s):  
Nitric Oxide ◽  
Thermal Oxidation ◽  
Conduction Band ◽  
Field Effect ◽  
Atomic Layer ◽  
Gate Oxides ◽  
Thermal Oxide ◽  
Nitrogen Concentrations ◽  
Peak Field

MOSFETs and capacitors have been fabricated to investigate the atomic layer depositon (ALD) of SiO2onto SiC compared to thermal oxidation of SiC. Devices were fabricated on 4H-SiC with the following oxidation treatments: thermal oxidation at 1175°C, thermal oxidation at 1175°C followed by a nitric oxide (NO) anneal at 1175°C, and ALD of SiC at 150°C followed by an NO post oxidation anneal (POA) at 1175°C. ALD of the SiO2was performed using 3-aminopropyltriethoxysiliane (3-APTES), ozone and water. Capacitors fabricated with NO annealed ALD oxide and thermal oxide with NO POA exhibited similar CV behavior and yielded similar Dit of 1e11 at 0.5 eV from the conduction band. MOSFETs fabricated with NO PDA ALD oxide exhibited peak field effect mobilities ranging from 32 – 40.5 cm2/Vs compared to 30 –34.5 cm2/Vs for the MOSFETs with NO annealed thermal oxide. The higher mobilities exhibited by the ALD gate oxides were linked through SIMS to higher nitrogen concentrations at the SiO2/SiC interface.

The Atmospheric Thermal Oxidation of Nitric Oxide

1963 ◽  
Vol 85 (19) ◽  
pp. 2901-2904 ◽  
Author(s):  
William A. Glasson ◽  
Charles S. Tuesday
Keyword(s):  
Nitric Oxide ◽  
Thermal Oxidation
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