Surface Reaction Probabilities of Silicon Hydride Radicals in SiH4/H2Thermal Chemical Vapor Deposition

2002 ◽  
Vol 41 (9) ◽  
pp. 2129-2135 ◽  
Author(s):  
Wei-Chang Hsin ◽  
Dah-Shyang Tsai ◽  
Y. Shimogaki
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Surface Reaction ◽  
Chemical Vapor ◽  
Silicon Hydride

Surface reaction probabilities of radicals correlated from film thickness contours in silane chemical vapor deposition

2002 ◽  
Vol 411 (2) ◽  
pp. 177-184 ◽  
Author(s):  
Dah-Shyang Tsai ◽  
Tzu-Chien Chang ◽  
Wei-Cheng Hsin ◽  
H Hamamura ◽  
Y Shimogaki
Keyword(s):  
Chemical Vapor Deposition ◽  
Film Thickness ◽  
Vapor Deposition ◽  
Surface Reaction ◽  
Chemical Vapor

Passivation of InGaAs(001)-(2 × 4) by Self-Limiting Chemical Vapor Deposition of a Silicon Hydride Control Layer

2015 ◽  
Vol 137 (26) ◽  
pp. 8526-8533 ◽  
Author(s):  
Mary Edmonds ◽  
Tyler Kent ◽  
Evgueni Chagarov ◽  
Kasra Sardashti ◽  
Ravi Droopad ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Hydride ◽  
Control Layer

Gas-phase diffusion and surface reaction as limiting mechanisms in the aerosol-assisted chemical vapor deposition of TiO2 films from titanium diisopropoxide

2006 ◽  
Vol 21 (12) ◽  
pp. 3205-3209 ◽  
Author(s):  
A. Conde-Gallardo ◽  
M. Guerrero ◽  
R. Fragoso ◽  
N. Castillo
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Surface Reaction ◽  
Crystalline Silicon ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Thermal Reaction ◽  
Phase Diffusion ◽  
Wide Range

Titanium dioxide thin films were deposited on crystalline silicon (100) substrates by delivering a liquid aerosol of titanium-diisopropoxide. The evidence of a metalorganic chemical vapor deposition process observed in the crystalline and morphological features of the films is strongly supported by the behavior of the growth rate rg as a function of the deposition temperature. The rg line shape indicates that in a wide range of temperatures (∼180–400 °C), the film formation is limited by both gas-phase diffusion of some molecular species toward the substrate surface and the thermal reaction of those species on that surface. The activation energy EA that characterizes the surface reaction depends somewhat on the precursor concentration; a fitting procedure to an equation that takes into account both limiting mechanisms (gas-phase diffusion + surface reaction) yields EA ≃ 27.6 kJ/mol.

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