Chemical Vapor Deposition of TiSi Nanowires on C54 TiSi2Thin Film: An Amorphous Titanium Silicide Interlayer Assisted Nanowire Growth

2009 ◽  
Vol 21 (22) ◽  
pp. 5388-5396 ◽  
Author(s):  
Huang-Kai Lin ◽  
Hsin-An Cheng ◽  
Chi-Young Lee ◽  
Hsin-Tien Chiu
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Titanium Silicide ◽  
Nanowire Growth

scholarly journals Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Zhenzhen Tian ◽  
Xiaoming Yuan ◽  
Ziran Zhang ◽  
Wuao Jia ◽  
Jian Zhou ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Driving Force ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Nanowire Growth ◽  
Calphad Approach ◽  
Deposition Method ◽  
Large Area ◽  
Growth Phenomenon

AbstractGrowth of high-quality III–V nanowires at a low cost for optoelectronic and electronic applications is a long-term pursuit of research. Still, controlled synthesis of III–V nanowires using chemical vapor deposition method is challenge and lack theory guidance. Here, we show the growth of InP and GaP nanowires in a large area with a high density using a vacuum chemical vapor deposition method. It is revealed that high growth temperature is required to avoid oxide formation and increase the crystal purity of InP nanowires. Introduction of a small amount of Ga into the reactor leads to the formation of GaP nanowires instead of ternary InGaP nanowires. Thermodynamic calculation within the calculation of phase diagrams (CALPHAD) approach is applied to explain this novel growth phenomenon. Composition and driving force calculations of the solidification process demonstrate that only 1 at.% of Ga in the catalyst is enough to tune the nanowire formation from InP to GaP, since GaP nucleation shows a much larger driving force. The combined thermodynamic studies together with III–V nanowire growth studies provide an excellent example to guide the nanowire growth.

scholarly journals Real-time in-situ Investigation of III-V Nanowire Growth using Custom-designed Hybrid Chemical Vapor Deposition-TEM

2017 ◽  
Vol 23 (S1) ◽  
pp. 1716-1717 ◽  
Author(s):  
Kimberly Dick Thelander ◽  
L. Reine Wallenberg ◽  
Axel R. Persson ◽  
Marcus Tornberg ◽  
Daniel Jacobsson ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Real Time ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nanowire Growth ◽  
In Situ Investigation

Effects of Arsenic Doping on Chemical Vapor Deposition of Titanium Silicide

1999 ◽  
Vol 146 (11) ◽  
pp. 4240-4245 ◽  
Author(s):  
Hua Fang ◽  
Mehmet C. Öztürk ◽  
E. G. Seebauer ◽  
Dale E. Batchelor
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Titanium Silicide ◽  
Arsenic Doping

Selective Rapid Thermal Chemical Vapor Deposition of Titanium Silicide on Arsenic Implanted Silicon

1998 ◽  
Vol 514 ◽  
Author(s):  
Hua Fang ◽  
Mehmet C. Özttirk ◽  
Edmund G. Seebauer
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Substrate ◽  
Chemical Vapor ◽  
Silicon Wafers ◽  
Titanium Silicide ◽  
Experimental Results ◽  
Substrate Consumption ◽  
Thermal Chemical Vapor Deposition ◽  
Dose Levels

ABSTRACTThis work explores the effects of arsenic on rapid thermal chemical vapor deposition (RTCVD) of TiSi2. The films were deposited using TiCI4 and SiH4 on 100 mm oxide patterned silicon wafers selectively at temperatures ranging from 750°C to 850°C. Arsenic dose levels ranging from 3×1014 cm−2 to 5*times;1015 cm−2 at 50 keV were considered. Experimental results reveal that arsenic results in a resistance to TiSi2 nucleation and enhanced silicon substrate consumption. These effects are enhanced at higher arsenic dose levels and reduced at higher deposition temperatures. We propose an arsenic-surfacepassivation model to explain the effects.

Sign in / Sign up

Export Citation Format

Share Document