Silicon nanowire growth on glass substrates using hot wire chemical vapor deposition

2011 ◽  
Vol 519 (14) ◽  
pp. 4609-4612 ◽  
Author(s):  
Nagsen P. Meshram ◽  
Alka Kumbhar ◽  
R.O. Dusane
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Nanowire ◽  
Chemical Vapor ◽  
Nanowire Growth ◽  
Hot Wire ◽  
Glass Substrates

Continuous hot-wire chemical vapor deposition on moving glass substrates

2009 ◽  
Vol 517 (12) ◽  
pp. 3588-3590 ◽  
Author(s):  
A. Bink ◽  
M. Brinza ◽  
J.P.H. Jongen ◽  
R.E.I. Schropp
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Glass Substrates

Hot-Wire Chemical Vapor Deposition Epitaxy on Polycrystalline Silicon Seeds on Glass

2007 ◽  
Vol 989 ◽  
Author(s):  
Charles W. Teplin ◽  
Howard M. Branz ◽  
Kim M. Jones ◽  
Manuel J. Romero ◽  
Paul Stradins ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Low Cost ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Glass Substrates ◽  
Thin Polycrystalline ◽  
Induced Crystallization ◽  
Low Temperature Process

AbstractDuring the last few years, hot-wire chemical vapor deposition (HWCVD) has been explored as a low-temperature process for epitaxially thickening c-Si seeds layers on low cost substrates. Here, we demonstrate HWCVD epitaxy on thin polycrystalline silicon seed layers on borosilicate glass substrates. The crystal Si seeds are large-grained (~10 µm) polycrystalline silicon that were fabricated by Al-induced crystallization of a-Si. We report the growth of 0.5 µm of epitaxy at ~670°C.

High Band Gap Nanocrystalline Tungsten Carbide (nc-WC) Thin Films Grown by Hot Wire Chemical Vapor Deposition (HW-CVD) Method

2018 ◽  
Vol 10 (3) ◽  
pp. 03001-1-03001-6 ◽  
Author(s):  
Bharat Gabhale ◽  
◽  
Ashok Jadhawar ◽  
Ajinkya Bhorde ◽  
Shruthi Nair ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Tungsten Carbide ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Cvd Method ◽  
High Band

scholarly journals Synthesis of Boron-Doped Silicon Film Using Hot Wire Chemical Vapor Deposition Technique

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 237
Author(s):  
M. Abul Hossion ◽  
B. M. Arora
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Deposition Technique ◽  
Boron Doped ◽  
Vapor Deposition Technique ◽  
Polycrystalline Silicon Film

Boron-doped polycrystalline silicon film was synthesized using hot wire chemical vapor deposition technique for possible application in photonics devices. To investigate the effect of substrate, we considered Si/SiO2, glass/ITO/TiO2, Al2O3, and nickel tungsten alloy strip for the growth of polycrystalline silicon films. Scanning electron microscopy, optical reflectance, optical transmittance, X-ray diffraction, and I-V measurements were used to characterize the silicon films. The resistivity of the film was 1.3 × 10−2 Ω-cm for the polycrystalline silicon film, which was suitable for using as a window layer in a solar cell. These films have potential uses in making photodiode and photosensing devices.

Sign in / Sign up

Export Citation Format

Share Document