Effects of Arsenic Doping on Chemical Vapor Deposition of Titanium Silicide

1999 ◽  
Vol 146 (11) ◽  
pp. 4240-4245 ◽  
Author(s):  
Hua Fang ◽  
Mehmet C. Öztürk ◽  
E. G. Seebauer ◽  
Dale E. Batchelor
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Titanium Silicide ◽  
Arsenic Doping

Selective Rapid Thermal Chemical Vapor Deposition of Titanium Silicide on Arsenic Implanted Silicon

1998 ◽  
Vol 514 ◽  
Author(s):  
Hua Fang ◽  
Mehmet C. Özttirk ◽  
Edmund G. Seebauer
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Substrate ◽  
Chemical Vapor ◽  
Silicon Wafers ◽  
Titanium Silicide ◽  
Experimental Results ◽  
Substrate Consumption ◽  
Thermal Chemical Vapor Deposition ◽  
Dose Levels

ABSTRACTThis work explores the effects of arsenic on rapid thermal chemical vapor deposition (RTCVD) of TiSi2. The films were deposited using TiCI4 and SiH4 on 100 mm oxide patterned silicon wafers selectively at temperatures ranging from 750°C to 850°C. Arsenic dose levels ranging from 3×1014 cm−2 to 5*times;1015 cm−2 at 50 keV were considered. Experimental results reveal that arsenic results in a resistance to TiSi2 nucleation and enhanced silicon substrate consumption. These effects are enhanced at higher arsenic dose levels and reduced at higher deposition temperatures. We propose an arsenic-surfacepassivation model to explain the effects.

Titanium Silicide Films Deposited by Low Pressure Chemical Vapor Deposition

1984 ◽  
Vol 37 ◽  
Author(s):  
Prabha K. Tedrow ◽  
Vida Ilderem ◽  
R. Reif
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Titanium Silicide ◽  
System A ◽  
Turbomolecular Pump ◽  
Pressure Chemical ◽  
Free Environment ◽  
Infrared Lamps

AbstractSmooth titanium silicide films have been deposited using a Low Pressure Chemical Vapor Deposition (LPCVD) process. A system has been designed and built for the LPCVD of titanium silicide. It is a cold wall reactor with the wafer being heated externally by infrared lamps. Sequential deposition of polycrystalline silicon (polysilicon) and titanium silicide films, and in-situ annealing of these films, if required, can be performed in this system. A turbomolecular pump is used to provide a contaminant free environment with a base pressure of <10−7 torr. SiH4 and TiCl4 are used as silicon and titanium sources, respectively.Tithnium silicide films with resistivities ranging from 22 to 39 μΩ-cm have been obtained. At low deposition rates, these films have surface roughnesses ranging from 50 to 250 Å. From X-ray diffractometry, it was determined that the as-deposited titanium silicide films were polycrystalline, and TiSi2 was the predominant phase. Si/Ti ratios of 1.8 to 2.3 were obtained frog Rutherford Backscattering Spectroscopy (RBS). Auger analyses did not show any impurities such as oxygen, carbon or chlorine in these films.

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