Remote Hydrogen Plasma Chemical Vapor Deposition of Amorphous Hydrogenated Silicon-Carbon Films from an Organosilane Molecular Cluster as a Novel Single-Source Precursor: Structure, Growth Mechanism, and Properties of the Deposit

1995 ◽  
Vol 7 (7) ◽  
pp. 1403-1413 ◽  
Author(s):  
A. M. Wrobel ◽  
S. Wickramanayaka ◽  
Y. Nakanishi ◽  
Y. Fukuda ◽  
Y. Hatanaka
Keyword(s):  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Molecular Cluster ◽  
Hydrogenated Silicon ◽  
Plasma Chemical Vapor Deposition ◽  
Amorphous Hydrogenated Silicon ◽  
Silicon Carbon ◽  
Single Source Precursor ◽  
Precursor Structure

Remote Hydrogen Plasma Chemical Vapor Deposition from (Dimethylsilyl)(trimethylsilyl)methane. 2. Property−Structure Relationships for Resulting Silicon−Carbon Films

2003 ◽  
Vol 15 (8) ◽  
pp. 1757-1762 ◽  
Author(s):  
A. M. Wróbel ◽  
A. Walkiewicz-Pietrzykowska ◽  
D. M. Bieliński ◽  
J. E. Klemberg-Sapieha ◽  
Y. Nakanishi ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Silicon Carbon

Device Quality Silicon Carbon Thin Films

2000 ◽  
Vol 609 ◽  
Author(s):  
Christian Gemmer ◽  
Markus B. Schubert
Keyword(s):  
Thin Films ◽  
Resonance Energy ◽  
Chemical Vapor ◽  
Dark Conductivity ◽  
Carbon Films ◽  
Index Of Refraction ◽  
Nanocrystalline Phase ◽  
Hydrogenated Silicon ◽  
Hydrogen Dilution ◽  
Silicon Carbon

ABSTRACTWe attain good quality hydrogenated silicon carbon films grown by plasma-enhanced chemical vapor deposition. Similar to hydrogenated silicon, we observe a characteristic edge of crystallinity at medium hydrogen dilution ratios of the feedstock gases. In the transition regime between amorphous and nanocrystalline phase, our thin films exhibit a remarkable ratio of photocarrier mobility-lifetime product to dark conductivity of 105... 106 cm3A-1 and minimum light-induced degradation. The static index of refraction increases and the resonance energy decreases for films below the onset of crystallinity which points towards a higher compactness of the protocrystalline material. Hence, alloying of hydrogenated silicon with small amounts of carbon leads to the formation of SiC:H layers that feature an optical bandgap of 2.0 eV and simultaneously maintain the superior optoelectronic properties of protocrystalline silicon.

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