Photoelectron spectroscopic characterization of titanium-containing amorphous hydrogenated silicon–carbon films (aSi1-xCx:H/Ti)

2001 ◽  
Vol 73 (2) ◽  
pp. 237-245 ◽  
Author(s):  
A. Schüler ◽  
P. Oelhafen
Keyword(s):  
Spectroscopic Characterization ◽  
Carbon Films ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Silicon Carbon

Spectroscopic characterization of annealed Si1−xCx films synthesized by ion implantation

1996 ◽  
Vol 11 (9) ◽  
pp. 2269-2273 ◽  
Author(s):  
G. Compagnini ◽  
L. Calcagno ◽  
G. Foti ◽  
G. Baratta
Keyword(s):  
Energy Gap ◽  
Stoichiometric Composition ◽  
Fundamental Absorption Edge ◽  
Spectroscopic Characterization ◽  
Carbon Films ◽  
Optical Energy Gap ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Silicon Carbon ◽  
Carbon Excess

Amorphous hydrogenated silicon carbon alloys were synthesized by C2H2 ions implantation in a silicon substrate at different fluences to obtain samples with different carbon atomic concentrations (10−50 at. %). As-implanted and subsequently annealed samples were investigated by using Rutherford backscattering, infrared, and Raman spectroscopies in order to follow the crystallization process. It was found that crystallization of stoichiometric SiC phase starts at 1000 °C both in low and high containing carbon films, while at the stoichiometric composition silicon (or carbon) was found to clusterize into homonuclear islands even at lower temperatures. The analysis of the fundamental absorption edge reveals the presence of an optical energy gap of about 1.3 eV independently on the film composition in the as-implanted samples, while after the thermal process at 1000 °C it increases to 2 eV for a carbon concentration below 0.5 and up to 1.8 eV for all those samples with a carbon excess.

Study on the excimer laser annealed amorphous hydrogenated silicon carbon films deposited by PECVD

2010 ◽  
pp. NA-NA
Author(s):  
G. Ambrosone ◽  
D.K. Basa ◽  
U. Coscia ◽  
E. Tresso ◽  
A. Chiodoni ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Carbon Films ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Silicon Carbon

Advanced modeling for optical characterization of amorphous hydrogenated silicon films

2013 ◽  
Vol 541 ◽  
pp. 12-16 ◽  
Author(s):  
Daniel Franta ◽  
David Nečas ◽  
Lenka Zajíčková ◽  
Ivan Ohlídal ◽  
Jiří Stuchlík
Keyword(s):  
Optical Characterization ◽  
Silicon Films ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon

Sputtered Fitas of Amorphous Hydrogenated Silicon Carbide

1987 ◽  
Vol 97 ◽  
Author(s):  
Richard B. Rizk ◽  
Alain E. Kaloyeros ◽  
Wendell S. Williams ◽  
Nancy Finnegan ◽  
Carol Kozlowski
Keyword(s):  
Structural Changes ◽  
Rapid Development ◽  
Chemical Bonds ◽  
Complete Understanding ◽  
Silicon Matrix ◽  
Hydrogenated Silicon ◽  
Physical Mechanisms ◽  
Amorphous Hydrogenated Silicon ◽  
Silicon Carbon ◽  
Scientific Attention

The field of amorphous hydrogenated silicon-carbon alloys and thin films has witnessed, since the pioneering work of Anderson and Spear [1], rapid development and has attracted scientific attention and technological interest [2,3]. However, relatively little information is known [4] about the physical mechanisms that govern the inclusion of C and H in the silicon matrix, the nature of the chemical bonds involved, and the structural changes that result in the amorphous phase. Clearly, further fundamental studies are needed to achieve complete understanding of such amorphous systems with variable disorder.

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