Self-Poled Transparent and Flexible UV Light-Emitting Cerium Complex–PVDF Composite: A High-Performance Nanogenerator

2015 ◽  
Vol 7 (2) ◽  
pp. 1298-1307 ◽  
Author(s):  
Samiran Garain ◽  
Tridib Kumar Sinha ◽  
Prakriti Adhikary ◽  
Karsten Henkel ◽  
Shrabanee Sen ◽  
...  
Keyword(s):  
High Performance ◽  
Uv Light ◽  
Light Emitting

Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes

2002 ◽  
Vol 235 (1-4) ◽  
pp. 177-182 ◽  
Author(s):  
T Wang ◽  
Y.H Liu ◽  
Y.B Lee ◽  
Y Izumi ◽  
J.P Ao ◽  
...  
Keyword(s):  
High Performance ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Light Emitting

Ir/Ag reflector for high-performance GaN-based near UV light emitting diodes

2006 ◽  
Vol 133 (1-3) ◽  
pp. 26-29 ◽  
Author(s):  
Keun-Yong Ban ◽  
Hyun-Gi Hong ◽  
Do-Young Noh ◽  
Jung Inn Sohn ◽  
Dae-Joon Kang ◽  
...  
Keyword(s):  
High Performance ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Light Emitting ◽  
Ag Reflector

High-performance vertical GaN-based near-ultraviolet light-emitting diodes on Si substrates

2018 ◽  
Vol 6 (42) ◽  
pp. 11255-11260 ◽  
Author(s):  
Yuan Li ◽  
Wenliang Wang ◽  
Liegen Huang ◽  
Yulin Zheng ◽  
Xiaochan Li ◽  
...  
Keyword(s):  
High Performance ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Hole Injection ◽  
Light Emitting ◽  
Si Substrates ◽  
Electron Confinement ◽  
Near Ultraviolet ◽  
Ultraviolet Light Emitting Diodes ◽  
Electroluminescence Emission

High-performance vertical GaN-based near-ultraviolet (UV) light-emitting diodes (LEDs) on Si substrates with an electroluminescence emission wavelength of 395 nm have been fabricated by designing epitaxial structures to reduce the dislocation density and enhance the electron confinement and hole injection.

n-Type Diamond Growth by Phosphorus Doping

2007 ◽  
Vol 1039 ◽  
Author(s):  
Hiromitsu Kato ◽  
Toshiharu Makino ◽  
Satoshi Yamasaki ◽  
Hideyo Okushi
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
Light Emission ◽  
Uv Light ◽  
Light Emitting Diode ◽  
Diamond Growth ◽  
Phosphorus Doping ◽  
Light Emitting ◽  
Compensation Ratio ◽  
Phosphorus Doped

AbstractPhosphorus doping on (001)-oriented diamond is introduced and compared with results achieved on (111) diamond. Detailed procedures, conditions, doping characteristics, and recent electrical properties of (001) phosphorus-doped diamond films are described. Now the highest mobility is reached to be ∼780 cm2/Vs at room temperature. The carrier compensation ratio, which is still high around 50-80 %, is the most important issues for (001) phosphorus-doped diamond to improve its electrical property. The origin of compensators in phosphorus-doped diamond is investigated, while yet to be identified.Ultraviolet light emitting diode with p-i-n junction structure is also introduced using (001) n-type diamond. A strong UV light emission at around ∼240 nm is observed even at room temperature. High performance of diamond UV-LED is demonstrated.

scholarly journals New Phosphine Oxides as High Performance Near- UV Type I Photoinitiators of Radical Polymerization

Molecules ◽  
2020 ◽  
Vol 25 (7) ◽  
pp. 1671 ◽  
Author(s):  
Céline Dietlin ◽  
Thanh Tam Trinh ◽  
Stéphane Schweizer ◽  
Bernadette Graff ◽  
Fabrice Morlet-Savary ◽  
...  
Keyword(s):  
Light Absorption ◽  
High Performance ◽  
Uv Light ◽  
Quantum Yields ◽  
Type I ◽  
Phosphine Oxides ◽  
Absorption Properties ◽  
Light Emitting ◽  
Uv Visible ◽  
Led Irradiation

Carbazole structures are of high interest in photopolymerization due to their enhanced light absorption properties in the near-UV or even visible ranges. Therefore, type I photoinitiators combining the carbazole chromophore to the well-established phosphine-oxides were proposed and studied in this article. The aim of this article was to propose type I photoinitiators that can be more reactive than benchmark phosphine oxides, which are among the more reactive type I photoinitiators for a UV or near-UV light emitting diodes (LED) irradiation. Two molecules were synthesized and their UV-visible light absorption properties as well as the quantum yields of photolysis and photopolymerization performances were measured. Remarkably, the associated absorption was enhanced in the 350–410 nm range compared to benchmark phosphine oxides, and one compound was found to be more reactive in photopolymerization than the commercial photoinitiator TPO-L for an irradiation at 395 nm.

scholarly journals Absorbance detector for high performance liquid chromatography based on a deep-UV light-emitting diode at 235 nm

2017 ◽  
Vol 1512 ◽  
pp. 143-146 ◽  
Author(s):  
João Flavio da Silveira Petruci ◽  
Michael G. Liebetanz ◽  
Arnaldo Alves Cardoso ◽  
Peter C. Hauser
Keyword(s):  
High Performance Liquid Chromatography ◽  
Liquid Chromatography ◽  
High Performance ◽  
Uv Light ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Deep Uv

A GaN-free LED Structure for High UV-light Extraction

2002 ◽  
Vol 743 ◽  
Author(s):  
Toshio Nishida ◽  
Tomoyuki Ban ◽  
Naoki Kobayashi
Keyword(s):  
Buffer Layer ◽  
High Performance ◽  
Uv Light ◽  
Light Extraction ◽  
Light Emitting ◽  
Transmission Electron ◽  
Short Period ◽  
Type Contact ◽  
Metal Organic ◽  
P Type

ABSTRACTWe improved the extraction of ultraviolet light from AlGaN-based light emitting diodes (LEDs) at the wavelength of about 350 nm, by introducing a transparent structure that is free from binary GaN. We used an AlN-template layer on a sapphire substrate as starting medium of the metal organic vapor phase epitaxial growth. The buffer layer is an Al0.2Ga00.8N alloy. We also used a short period alloy superlattice as transparent and conductive p-type cladding and p-type contact layers. The resultant epitaxial structure is confirmed to be transparent with the transmittance of about 90% within the wavelength range of 340 – 400 nm. The crystal quality of the Al0.2Ga00.8N buffer layer was estimated by the transmission electron microscope (TEM) observation. The dislocation density of AlGaN buffer layer was highly reduced on the AlN template layer, both of which have a low density of screw and mixed-type dislocations, of the order of 10−8cm−2. We also found that light extraction is improved by a factor of 6 by introducing the transparent LED structure and a p-contact mirror. The resultant LED shows high performance under RT-CW operation, where 1 mW output power at 348 nm with 20 mA injection corresponds to the external quantum efficiency of 1.4 %. The maximum power was 7 mW at 220 mA. The emission spectrum is highly monochromatic with the UV-to-visible intensity ratio of about 1000. We also demonstrate the application of this transparent UV-LED to white light source in a bottom-emission geometry.

Tetraphenylbenzene-based AIEgens: the Horizontally Oriented Emitters for highly Efficient Non-doped Deep Blue OLEDs and Host for High-Performance Hybrid WOLEDs

2020 ◽  
Author(s):  
Pengbo Han ◽  
Zeng Xu ◽  
Chengwei Lin ◽  
Dongge Ma ◽  
Anjun Qin ◽  
...  
Keyword(s):  
High Performance ◽  
General Strategy ◽  
Flat Panel Displays ◽  
Light Emitting ◽  
Horizontal Orientation ◽  
Deep Blue ◽  
Full Color ◽  
High Emission ◽  
White Oleds ◽  
Low Efficiency

Deep blue organic-emitting fluorophores are crucial for application in white lighting and full color flat-panel displays but emitters with high color quality and efficiency are rare. Herein, novel deep blue AIE luminogens (AIEgens) with various donor units and an acceptor of cyano substituted tetraphenylbenzene (TPB) cores were developed and used to fabricate non-doped deep blue and hybrid white organic light-emitting diodes (OLEDs). Benefiting from its high emission efficiency and high proportion of horizontally oriented dipoles in the film state, the non-doped deep blue device based on CN-TPB-TPA realized a maximum external quantum efficiency 7.27%, with a low efficiency roll-off and CIE coordinates of (0.15, 0.08). Moreover, efficient two-color hybrid warm white OLEDs (CIE<sub>x,y</sub> = 0.43, 0.45) were achieved using CN-TPB-TPA as the blue-emitting layer and phosphor doped host, which realized maximum current, power, external quantum efficiencies 58.0 cd A<sup>-1</sup>, 60.7 lm W<sup>-1</sup> and 19.1%, respectively. This work provides a general strategy to achieve high performance, stable deep blue and hybrid white OLEDs by construction of AIEgens with excellent horizontal orientation

Thin Film 2-d Photonic Crystals High-Performance Light-Emitting Diodes

1999 ◽  
Author(s):  
Eli Yablonovitch ◽  
Misha Boroditsky ◽  
Rutger Vrijen ◽  
Thomas F. Krauss ◽  
Roberto Coccioli
Keyword(s):  
Thin Film ◽  
Photonic Crystals ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Light Emitting
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