Ir/Ag reflector for high-performance GaN-based near UV light emitting diodes

2006 ◽  
Vol 133 (1-3) ◽  
pp. 26-29 ◽  
Author(s):  
Keun-Yong Ban ◽  
Hyun-Gi Hong ◽  
Do-Young Noh ◽  
Jung Inn Sohn ◽  
Dae-Joon Kang ◽  
...  
Keyword(s):  
High Performance ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Light Emitting ◽  
Ag Reflector

Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes

2002 ◽  
Vol 235 (1-4) ◽  
pp. 177-182 ◽  
Author(s):  
T Wang ◽  
Y.H Liu ◽  
Y.B Lee ◽  
Y Izumi ◽  
J.P Ao ◽  
...  
Keyword(s):  
High Performance ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Light Emitting

High-performance vertical GaN-based near-ultraviolet light-emitting diodes on Si substrates

2018 ◽  
Vol 6 (42) ◽  
pp. 11255-11260 ◽  
Author(s):  
Yuan Li ◽  
Wenliang Wang ◽  
Liegen Huang ◽  
Yulin Zheng ◽  
Xiaochan Li ◽  
...  
Keyword(s):  
High Performance ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Hole Injection ◽  
Light Emitting ◽  
Si Substrates ◽  
Electron Confinement ◽  
Near Ultraviolet ◽  
Ultraviolet Light Emitting Diodes ◽  
Electroluminescence Emission

High-performance vertical GaN-based near-ultraviolet (UV) light-emitting diodes (LEDs) on Si substrates with an electroluminescence emission wavelength of 395 nm have been fabricated by designing epitaxial structures to reduce the dislocation density and enhance the electron confinement and hole injection.

Thin Film 2-d Photonic Crystals High-Performance Light-Emitting Diodes

1999 ◽  
Author(s):  
Eli Yablonovitch ◽  
Misha Boroditsky ◽  
Rutger Vrijen ◽  
Thomas F. Krauss ◽  
Roberto Coccioli
Keyword(s):  
Thin Film ◽  
Photonic Crystals ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Light Emitting

Ultra-smooth and robust graphene-based hybrid anode for high-performance flexible organic light-emitting diodes

2021 ◽  
Author(s):  
zhikun zhang ◽  
lianlian xia ◽  
Lizhao Liu ◽  
Yuwen Chen ◽  
zuozhi wang ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Chemical Vapor ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Organic Light ◽  
Large Particles

Large surface roughness, especially caused by the large particles generated during both the transfer and the doping processes of graphene grown by chemical vapor deposition (CVD) is always a critical...

Surface Organic Ligands-Passivated Quantum Dots: Toward High-Performance Light-Emitting Diodes with Long Lifetime

2021 ◽  
Author(s):  
Lishuang Wang ◽  
Ying Lv ◽  
Jie Lin ◽  
Jialong Zhao ◽  
Xingyuan Liu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Organic Ligands ◽  
Colloidal Quantum Dots ◽  
Core Shell ◽  
Light Emitting ◽  
Long Lifetime

For quantum dots light-emitting diodes (QLEDs), typical colloidal quantum dots (QDs) are usually composed of a core/shell heterostructure which is covered with organic ligands as surface passivated materials to confine...

Performance of vertical type deep UV light-emitting diodes depending on the Ga-face n-contact hole density

2021 ◽  
Vol 118 (23) ◽  
pp. 231102
Author(s):  
Youn Joon Sung ◽  
Dong-Woo Kim ◽  
Geun Young Yeom ◽  
Kyu Sang Kim
Keyword(s):  
Light Emitting Diodes ◽  
Uv Light ◽  
Hole Density ◽  
Light Emitting ◽  
Deep Uv

scholarly journals High-performance quasi-2D perovskite light-emitting diodes: from materials to devices

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Li Zhang ◽  
Changjiu Sun ◽  
Tingwei He ◽  
Yuanzhi Jiang ◽  
Junli Wei ◽  
...  
Keyword(s):  
Energy Transfer ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Structural Characteristics ◽  
Quantum Yields ◽  
Research Directions ◽  
Light Emitting ◽  
Perovskite Materials ◽  
Quantum Confinement Effects ◽  
Semiconducting Properties

AbstractQuasi-two-dimensional (quasi-2D) perovskites have attracted extraordinary attention due to their superior semiconducting properties and have emerged as one of the most promising materials for next-generation light-emitting diodes (LEDs). The outstanding optical properties originate from their structural characteristics. In particular, the inherent quantum-well structure endows them with a large exciton binding energy due to the strong dielectric- and quantum-confinement effects; the corresponding energy transfer among different n-value species thus results in high photoluminescence quantum yields (PLQYs), particularly at low excitation intensities. The review herein presents an overview of the inherent properties of quasi-2D perovskite materials, the corresponding energy transfer and spectral tunability methodologies for thin films, as well as their application in high-performance LEDs. We then summarize the challenges and potential research directions towards developing high-performance and stable quasi-2D PeLEDs. The review thus provides a systematic and timely summary for the community to deepen the understanding of quasi-2D perovskite materials and resulting LED devices.

High performance red phosphorescent organic electroluminescent devices with characteristic mechanisms by utilizing terbium or gadolinium complexes as sensitizers

2017 ◽  
Vol 5 (8) ◽  
pp. 2066-2073 ◽  
Author(s):  
Rongzhen Cui ◽  
Weiqiang Liu ◽  
Liang Zhou ◽  
Xuesen Zhao ◽  
Yunlong Jiang ◽  
...  
Keyword(s):  
High Performance ◽  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Color Purity ◽  
Electroluminescent Devices ◽  
Light Emitting ◽  
Organic Light ◽  
Gadolinium Complexes ◽  
Organic Electroluminescent ◽  
High Color Purity

High performance sensitized organic light-emitting diodes with high color purity were obtained by utilizing terbium or gadolinium complexes as sensitizers.

New Results on Electroluminescence from Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
Peter Steiner ◽  
Frank Kozlowski ◽  
Hermann Sandmaier ◽  
Walter Lang
Keyword(s):  
Porous Silicon ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Uv Light ◽  
Green Light ◽  
Light Emitting ◽  
Porous Region ◽  
First Results

ABSTRACTFirst results on light emitting diodes in porous silicon were reported in 1991. They showed a quantum efficiency of 10-7 to 10-5 and an orange spectrum. Over the last year some progress was achieved:- By applying UV-light during the etching blue and green light emitting diodes in porous silicon are fabricated.- When a p/n junction is realized within the porous region, a quantum efficiency of 10-4 is obtained.

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