Patterned Surface with Controllable Wettability for Inkjet Printing of Flexible Printed Electronics

2014 ◽  
Vol 6 (6) ◽  
pp. 4011-4016 ◽  
Author(s):  
Phuong Q. M. Nguyen ◽  
Lip-Pin Yeo ◽  
Boon-Keng Lok ◽  
Yee-Cheong Lam
2020 ◽  
Vol 36 ◽  
pp. 101544
Author(s):  
Devin J. Roach ◽  
Christopher Roberts ◽  
Janet Wong ◽  
Xiao Kuang ◽  
Joshua Kovitz ◽  
...  

2021 ◽  
Author(s):  
Dongjin Xie ◽  
Qiuyi Luo ◽  
Shen Zhou ◽  
Mei Zu ◽  
Haifeng Cheng

Inkjet printing of functional material has shown a wide range of application in advertzing, OLED display, printed electronics and other specialized utilities that require high-precision, mask-free, direct-writing deposition technique. Nevertheless,...


2014 ◽  
Vol 1628 ◽  
Author(s):  
Kalyan Yoti Mitra ◽  
Carme Martínez-Domingo ◽  
Enrico Sowade ◽  
Eloi Ramon ◽  
Henrique Leonel Gomes ◽  
...  

ABSTRACTInkjet printing is a well-accepted deposition technology for functional materials in the area of printed electronics. It allows the precise deposition of patterned functional layers on both, rigid and flexible substrates. Furthermore, inkjet printing is considered as up-scalable technology towards industrial applications. Many electronic devices manufactured with inkjet printing have been reported in the recent years. Some of the evident examples are capacitors, resistors, organic thin film transistors and rectifying Schottky diodes. [1, 2, 3] In this paper we report on the manufacturing of an inkjet-printed metal-insulator-semiconductor (MIS) diode on flexible plastic substrate. The structure is comprised of an insulating and a polymeric semiconducting layer sandwiched between two silver electrodes. The current vs. voltage characteristics are rectifying with rectification ratio up to 100 at |4 V|. Furthermore, they can carry high current densities (up to mA/cm2) and have a low capacitance which makes them attractive for high frequency rectifying circuits. They are also an ideal candidate to replace conventional Schottky diodes for which the fabrication remains a challenge. This is because inkjet printing of Schottky diodes require additional processing steps such as intense pulsed light sintering (IPL sintering) [4] or post-treatments at high temperatures. The deposition of two different metal layers using inkjet printing e.g. Cu or Al with Ag is possible. However, the mentioned post treatment technologies might be incompatible with the already existing layer stack– e.g. it could degrade the organic semiconductor or can damage insulator which in this case is present in the MIS diode architecture.


Materials ◽  
2020 ◽  
Vol 13 (3) ◽  
pp. 704 ◽  
Author(s):  
Vimanyu Beedasy ◽  
Patrick J. Smith

Inkjet printing has been used to produce a range of printed electronic devices, such as solar panels, sensors, and transistors. This article discusses inkjet printing and its employment in the field of printed electronics. First, printing as a field is introduced before focusing on inkjet printing. The materials that can be employed as inks are then introduced, leading to an overview of wetting, which explains the influences that determine print morphology. The article considers how the printing parameters can affect device performance and how one can account for these influences. The article concludes with a discussion on adhesion. The aim is to illustrate that the factors chosen in the fabrication process, such as dot spacing and sintering conditions, will influence the performance of the device.


2018 ◽  
Vol 6 (7) ◽  
pp. 1618-1641 ◽  
Author(s):  
N. C. Raut ◽  
K. Al-Shamery

Inorganic printed electronics is now recognized as an area of tremendous commercial potential and technical progress.


Author(s):  
Pit Teunissen ◽  
Robert Abbel ◽  
Tamara Eggenhuizen ◽  
Michiel Coenen ◽  
Pim Groen

2021 ◽  
Vol 59 (5) ◽  
pp. 314-320
Author(s):  
Woon-Seop Choi

Inkjet printing is a very attractive technology for printed electronics and a potential alternative to current high cost and multi-chemical lithography processes, for display and other applications in the electronics field. Inkjet technology can be employed to fabricate organic light emitting diodes (OLED), quantum dots displays, and thin-film transistors (TFTs). Among potential applications, metal oxide TFTs, which have good properties and moderate processing methods, could be prepared using inkjet printing in the display industry. One effective method of improving their electrical properties is via doping. Lithium doping an oxide TFT is a very delicate process, and difficult to get good results. In this study, lithium was added to indium-zinc oxide (IZO) for inkjet printing to make oxide TFTs. Electrical properties, transfer and output curves, were achieved using inkjet printing even at the relatively low annealing temperature of 200 oC. After optimizing the inkjet process parameters, a 0.01 M Li-doped IZO TFT at 400 oC showed a mobility of 9.08 ± 0.7 cm2/V s, a sub-threshold slope of 0.62 V/dec, a threshold voltage of 2.66 V, and an on-to-off current ratio of 2.83 × 108. Improved bias stability and hysteresis behavior of the inkjet-printed IZO TFT were also achieved by lithium doping.


2020 ◽  
Vol 6 (33) ◽  
pp. eaba5029 ◽  
Author(s):  
Guohua Hu ◽  
Lisong Yang ◽  
Zongyin Yang ◽  
Yubo Wang ◽  
Xinxin Jin ◽  
...  

Recent advances in inkjet printing of two-dimensional (2D) crystals show great promise for next-generation printed electronics development. Printing nonuniformity, however, results in poor reproducibility in device performance and remains a major impediment to their large-scale manufacturing. At the heart of this challenge lies the coffee-ring effect (CRE), ring-shaped nonuniform deposits formed during postdeposition drying. We present an experimental study of the drying mechanism of a binary solvent ink formulation. We show that Marangoni-enhanced spreading in this formulation inhibits contact line pinning and deforms the droplet shape to naturally suppress the capillary flows that give rise to the CRE. This general formulation supports uniform deposition of 2D crystals and their derivatives, enabling scalable and even wafer-scale device fabrication, moving them closer to industrial-level additive manufacturing.


Materials ◽  
2019 ◽  
Vol 12 (14) ◽  
pp. 2277 ◽  
Author(s):  
Mavuri ◽  
Mayes ◽  
Alexander

Printed electronics (PE) technology shows huge promise for the realisation of low-cost and flexible electronics, with the ability to pattern heat- or pressure-sensitive materials. In future developments of the PE market, the ability to produce highly conductive, high-resolution patterns using low-cost and roll-to-roll processes, such as inkjet printing, is a critical technology component for the fabrication of printed electronics and displays. Here, we demonstrate inkjet printing of polyacrylic acid (PAA) capped silver nanoparticle dispersions onto paper for high-conductivity electronic interconnects. We characterise the resulting print quality, feature geometry and electrical performance of inkjet patterned features and demonstrate the high-resolution printing, sub-100 micron feature size, of silver nanoparticle materials onto flexible paper substrate. Printed onto photo-paper, these materials then undergo chemically triggered sintering on exposure to chloride contained in the paper. We investigated the effect of substrate temperature on the properties of printed silver material from room temperature to 50 °C. At room temperature, the resistivity of single layer printed features, of average thickness of 500 nm and width 85 µm, was found to be 2.17 × 10−7 Ω·m or 13 times resistivity of bulk silver (RBS). The resistivity initially decreased with an increase in material thickness, when achieved by overprinting successive layers or by decreasing print pitch, and a resistivity of around 10 times RBS was observed after overprinting two times at pitch 75 µm and with single pass print pitch of between 60 and 80 µm, resulting in line thickness up to 920 nm. On further increases in thickness the resistivity increased and reached 27 times RBS at print pitch of 15 µm. On moderate heating of the substrate to 50 °C, more compact silver nanoparticle films were formed, reducing thickness to 200 nm from a single pass print, and lower material resistivity approaching five times RBS was achieved.


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