scholarly journals The Effects of Atomic-Scale Strain Relaxation on the Electronic Properties of Monolayer MoS2

ACS Nano ◽  
2019 ◽  
Vol 13 (7) ◽  
pp. 8284-8291 ◽  
Author(s):  
Daniel J. Trainer ◽  
Yuan Zhang ◽  
Fabrizio Bobba ◽  
Xiaoxing Xi ◽  
Saw-Wai Hla ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Strain Relaxation ◽  
Atomic Scale ◽  
Monolayer Mos2

Electronic properties of intrinsic vacancies in single-layer CaF2 and its heterostructure with monolayer MoS2

2021 ◽  
Vol 130 (5) ◽  
pp. 055301
Author(s):  
Zhenzhen Li ◽  
Mehmet Baskurt ◽  
Hasan Sahin ◽  
Shiwu Gao ◽  
Jun Kang
Keyword(s):  
Electronic Properties ◽  
Single Layer ◽  
Monolayer Mos2

Process-Dependent Electronic Structure at Metallized GaAs Contacts

1992 ◽  
Vol 260 ◽  
Author(s):  
L. J. Brillson ◽  
I. M. Vitomirov ◽  
A. Raisanen ◽  
S. Chang ◽  
R. E. Viturro ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Chemical Interaction ◽  
Deep Level ◽  
Multiple Roles ◽  
Atomic Scale ◽  
Photoemission Spectroscopy ◽  
Band Bending ◽  
Barrier Heights ◽  
Barrier Formation ◽  
Thermally Driven

ABSTRACTThe influence of metallization and processing on Schottky barrier formation provides the basis for one of several fruitful approaches for controlling junction electronic properties. Interface cathodo-and photoluminescence measurements reveal that electrically-active deep levels form on GaAs(100) surfaces and metal interfaces which depend on thermally-driven surface stoichiometry and reconstruction, chemical interaction, as well as surface misorientation and bulk crystal quality. These interface states are discrete and occur at multiple gap energies which can account for observed band bending. Characteristic trends in such deep level emission with interface processing provide guides for optimizing interface electronic behavior. Correspondingly, photoemission and internal photoemission spectroscopy measurements indicate self-consistent changes in barrier heights which may be heterogeneous and attributable to interface chemical reactions observed on a monolayer scale. These results highlight the multiple roles of atomic-scale structure in forming macroscopic electronic properties of compound semiconductor-metal junctions.

Anisotropic Structural and Electronic Properties of InGaAs/GaAs Heterojunctions

1994 ◽  
Vol 340 ◽  
Author(s):  
R.S. Goldman ◽  
K. Rammohan ◽  
A. Raisanen ◽  
M. Goorsky ◽  
L.J. Brillson ◽  
...  
Keyword(s):  
High Resolution ◽  
Dislocation Density ◽  
Electronic Properties ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Polarization Anisotropy ◽  
X Ray ◽  
Bulk Strain ◽  
Gaas Substrates ◽  
Structural And Electronic Properties

ABSTRACTWe have investigated the structural and electronic properties of partially strain-relaxed InxGal-xAs/GaAs heterojunctions, grown by molecular beam epitaxy (MBE) on both misoriented and nominally flat (001) GaAs substrates. Mobility measurements using Hall bars aligned along the [110] and [110] in-plane directions reveal an asymmetry in bulk InGaAs electron mobility. This asymmetry is correlated with an anisotropic bulk strain relaxation and interfacial misfit dislocation density, determined from high-resolution x-ray rocking curves (XRC), as well as a polarization anisotropy in cathodoluminescence (CL).

scholarly journals Raman spectroscopy as a tool to investigate the structure and electronic properties of carbon-atom wires

2015 ◽  
Vol 6 ◽  
pp. 480-491 ◽  
Author(s):  
Alberto Milani ◽  
Matteo Tommasini ◽  
Valeria Russo ◽  
Andrea Li Bassi ◽  
Andrea Lucotti ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Carbon Atom ◽  
Electronic Properties ◽  
Carbon Nanostructures ◽  
Short Review ◽  
Atomic Scale ◽  
Current Status ◽  
Wire Length ◽  
Molecular Group ◽  
Surface Enhanced Raman

Graphene, nanotubes and other carbon nanostructures have shown potential as candidates for advanced technological applications due to the different coordination of carbon atoms and to the possibility of π-conjugation. In this context, atomic-scale wires comprised of sp-hybridized carbon atoms represent ideal 1D systems to potentially downscale devices to the atomic level. Carbon-atom wires (CAWs) can be arranged in two possible structures: a sequence of double bonds (cumulenes), resulting in a 1D metal, or an alternating sequence of single–triple bonds (polyynes), expected to show semiconducting properties. The electronic and optical properties of CAWs can be finely tuned by controlling the wire length (i.e., the number of carbon atoms) and the type of termination (e.g., atom, molecular group or nanostructure). Although linear, sp-hybridized carbon systems are still considered elusive and unstable materials, a number of nanostructures consisting of sp-carbon wires have been produced and characterized to date. In this short review, we present the main CAW synthesis techniques and stabilization strategies and we discuss the current status of the understanding of their structural, electronic and vibrational properties with particular attention to how these properties are related to one another. We focus on the use of vibrational spectroscopy to provide information on the structural and electronic properties of the system (e.g., determination of wire length). Moreover, by employing Raman spectroscopy and surface enhanced Raman scattering in combination with the support of first principles calculations, we show that a detailed understanding of the charge transfer between CAWs and metal nanoparticles may open the possibility to tune the electronic structure from alternating to equalized bonds.

Structural and electronic properties of magnetic cylinders at the atomic scale

2014 ◽  
Vol 68 (2) ◽  
Author(s):  
Faustino Aguilera-Granja ◽  
Juan Martin Montejano-Carrizales ◽  
Eugenio E. Vogel
Keyword(s):  
Electronic Properties ◽  
Atomic Scale ◽  
Structural And Electronic Properties
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