Strain relaxation effect on electronic properties of compressively strained InGaAs/InP vertically stacked multiple quantum wires

2010 ◽  
Vol 108 (2) ◽  
pp. 023104 ◽  
Author(s):  
Seoung-Hwan Park ◽  
Jong-In Shim ◽  
Sam Nyung Yi
Keyword(s):  
Electronic Properties ◽  
Quantum Wires ◽  
Strain Relaxation ◽  
Relaxation Effect ◽  
Multiple Quantum

scholarly journals Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well

2010 ◽  
Vol 107 (11) ◽  
pp. 114303 ◽  
Author(s):  
V. Ramesh ◽  
A. Kikuchi ◽  
K. Kishino ◽  
M. Funato ◽  
Y. Kawakami
Keyword(s):  
Quantum Well ◽  
Strain Relaxation ◽  
Multiple Quantum Well ◽  
Relaxation Effect ◽  
Multiple Quantum

scholarly journals Efficiency enhancement of InGaN amber MQWs using nanopillar structures

Nanophotonics ◽  
2018 ◽  
Vol 7 (1) ◽  
pp. 317-322 ◽  
Author(s):  
Yiyu Ou ◽  
Daisuke Iida ◽  
Jin Liu ◽  
Kaiyu Wu ◽  
Kazuhiro Ohkawa ◽  
...  
Keyword(s):  
Extraction Efficiency ◽  
Internal Quantum Efficiency ◽  
Strain Relaxation ◽  
Multiple Quantum Well ◽  
Relaxation Effect ◽  
Indium Content ◽  
Light Extraction ◽  
Light Extraction Efficiency ◽  
Multiple Quantum ◽  
Emission Enhancement

AbstractWe have investigated the use of nanopillar structures on high indium content InGaN amber multiple quantum well (MQW) samples to enhance the emission efficiency. A significant emission enhancement was observed which can be attributed to the enhancement of internal quantum efficiency and light extraction efficiency. The size-dependent strain relaxation effect was characterized by photoluminescence, Raman spectroscopy and time-resolved photoluminescence measurements. In addition, the light extraction efficiency of different MQW samples was studied by finite-different time-domain simulations. Compared to the as-grown sample, the nanopillar amber MQW sample with a diameter of 300 nm has demonstrated an emission enhancement by a factor of 23.8.

scholarly journals Improved Performance of GaN-Based Light-Emitting Diodes Grown on Si (111) Substrates with NH3 Growth Interruption

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 399
Author(s):  
Sang-Jo Kim ◽  
Semi Oh ◽  
Kwang-Jae Lee ◽  
Sohyeon Kim ◽  
Kyoung-Kook Kim
Keyword(s):  
Buffer Layer ◽  
Light Emitting Diodes ◽  
Defect Density ◽  
Strain Relaxation ◽  
Multiple Quantum Well ◽  
Light Output ◽  
Multiple Quantum ◽  
Light Emitting ◽  
Growth Interruption ◽  
Aln Buffer

We demonstrate the highly efficient, GaN-based, multiple-quantum-well light-emitting diodes (LEDs) grown on Si (111) substrates embedded with the AlN buffer layer using NH3 growth interruption. Analysis of the materials by the X-ray diffraction omega scan and transmission electron microscopy revealed a remarkable improvement in the crystalline quality of the GaN layer with the AlN buffer layer using NH3 growth interruption. This improvement originated from the decreased dislocation densities and coalescence-related defects of the GaN layer that arose from the increased Al migration time. The photoluminescence peak positions and Raman spectra indicate that the internal tensile strain of the GaN layer is effectively relaxed without generating cracks. The LEDs embedded with an AlN buffer layer using NH3 growth interruption at 300 mA exhibited 40.9% higher light output power than that of the reference LED embedded with the AlN buffer layer without NH3 growth interruption. These high performances are attributed to an increased radiative recombination rate owing to the low defect density and strain relaxation in the GaN epilayer.

scholarly journals Electronic properties of compositionally disordered quantum wires

1991 ◽  
Vol 67 (17) ◽  
pp. 2359-2362 ◽  
Author(s):  
J. Taylor ◽  
K. Hugill ◽  
D. Vvedensky ◽  
A. MacKinnon
Keyword(s):  
Electronic Properties ◽  
Quantum Wires
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