Anisotropic Structural and Electronic Properties of InGaAs/GaAs Heterojunctions

1994 ◽  
Vol 340 ◽  
Author(s):  
R.S. Goldman ◽  
K. Rammohan ◽  
A. Raisanen ◽  
M. Goorsky ◽  
L.J. Brillson ◽  
...  
Keyword(s):  
High Resolution ◽  
Dislocation Density ◽  
Electronic Properties ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Polarization Anisotropy ◽  
X Ray ◽  
Bulk Strain ◽  
Gaas Substrates ◽  
Structural And Electronic Properties

ABSTRACTWe have investigated the structural and electronic properties of partially strain-relaxed InxGal-xAs/GaAs heterojunctions, grown by molecular beam epitaxy (MBE) on both misoriented and nominally flat (001) GaAs substrates. Mobility measurements using Hall bars aligned along the [110] and [110] in-plane directions reveal an asymmetry in bulk InGaAs electron mobility. This asymmetry is correlated with an anisotropic bulk strain relaxation and interfacial misfit dislocation density, determined from high-resolution x-ray rocking curves (XRC), as well as a polarization anisotropy in cathodoluminescence (CL).

STRAIN RELAXATION IN SiGe VIRTUAL SUBSTRATE CHARACTERIZED BY HIGH RESOLUTION X-RAY DIFFRACTION

2010 ◽  
Vol 24 (22) ◽  
pp. 4225-4231
Author(s):  
W. S. TAN ◽  
H. L. CAI ◽  
X. S. WU ◽  
K. M. DENG ◽  
H. H. CHENG
Keyword(s):  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Buffer Layer ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sb Doping

In this paper, with solid source molecular beam epitaxy technique, Si 1-x Ge x( SiGe ) virtual substrates were deposited on low-temperature-grown Si (LT- Si ) buffer layer, which was doped with Sb . The strain in SiGe virtual substrate was characterized by high resolution X-ray diffraction. Results indicated that Sb -doping in LT- Si can effectively modulate the degree of strain relaxation in SiGe virtual substrate. The segregated Sb on the surface of LT- Si layer acts as surfactant and results in abrupt strain relaxation.

Anisotropic Lattice Relaxation and its Mechanism of ZnSe Epilayer Grown on (001) GaAs Substrate by Molecular Beam Epitaxy

1995 ◽  
Vol 399 ◽  
Author(s):  
C.S. Kim ◽  
S.K. Noh ◽  
H.J. Lee ◽  
Y.K. Cho ◽  
Y.I. Kim ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Rotation Angle ◽  
Lattice Relaxation ◽  
High Dislocation Density ◽  
Sinusoidal Oscillation ◽  
Double Crystal ◽  
X Ray ◽  
Anisotropic Lattice

ABSTRACTWe have investigated anisotropic lattice relaxation and its mechanism of ZnSe epitaxial layer grown on (001) GaAs substrate by MBE. Double-crystal X-ray rocking curves for (004), {115} and {404} reflections were measured as a function of the azimuthal rotation angle of the sample. We observed the sinusoidal oscillation of the FWHM of the epilayer peak for (004) reflections due to the asymmetric dislocation density along two orthogonal <110> directions, and the direction of the maximum FWHM corresponding to high dislocation density is along [110]. In addition, the strain along [110] is smaller than that along [1-10], indicating that the layer suffered anisotropic lattice relaxation. The direction of larger relaxation([l-10]) is not consistent with that of high dislocation density([110]). The results suggest that the asymmetry in dislocation density is not responsible for the anisotropic relaxation of the ZnSe epilayer.

Heterostructures of GaAs and AlAs on Silicon: X-Ray Analysis and Excimer Laser Annealing

1988 ◽  
Vol 116 ◽  
Author(s):  
A. Georgakilas ◽  
M. Fatemi ◽  
L. Fotiadis ◽  
A. Christou
Keyword(s):  
Molecular Beam Epitaxy ◽  
Dislocation Density ◽  
Excimer Laser ◽  
Molecular Beam ◽  
Laser Annealing ◽  
High Resistivity ◽  
Silicon Substrates ◽  
Excimer Laser Annealing ◽  
X Ray ◽  
High Resistivity Silicon

AbstractOne micron thick AlAs/GaAs structures have been deposited by molecular beam epitaxy onto high resistivity silicon substrates. Subsequent to deposition, it is shown that Excimer laser annealing up to 120mJ/cm2 at 248nm improves the GaAs mobility to approximately 2000cm2 /v-s. Dislocation density, however, did not decrease up to 180mJ/cm2 showing that improvement in transport properties may not be accompanied by an associated decrease in dislocation density at the GaAs/Si interface.

Evaluation of threading dislocation density of strained Ge epitaxial layer by high resolution x-ray diffraction

2017 ◽  
Vol 26 (12) ◽  
pp. 127309 ◽  
Author(s):  
Yuan-Hao Miao ◽  
Hui-Yong Hu ◽  
Xin Li ◽  
Jian-Jun Song ◽  
Rong-Xi Xuan ◽  
...  
Keyword(s):  
High Resolution ◽  
Dislocation Density ◽  
Epitaxial Layer ◽  
Threading Dislocation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Threading Dislocation Density

High resolution X-ray diffraction studies of CdxHg1-xTe/CdTe epitaxial layers grown by MOVPE on GaAs substrates

1990 ◽  
Vol 101 (1-4) ◽  
pp. 572-578 ◽  
Author(s):  
A.M. Keir ◽  
A. Graham ◽  
S.J. Barnett ◽  
J. Giess ◽  
M.G. Astles ◽  
...  
Keyword(s):  
High Resolution ◽  
Epitaxial Layers ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gaas Substrates

Structural Perfection of in GaAs/InP Superlattices Grown by Gas Source Molecular Beam Epitaxy: A High-Resolution X-Ray Diffraction Study

1987 ◽  
Vol 103 ◽  
Author(s):  
J. M. Vandenberg ◽  
M. B. Panish ◽  
R. A. Hamm
Keyword(s):  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Structural Parameters ◽  
Molecular Layer ◽  
X Ray Diffraction ◽  
Structural Perfection ◽  
X Ray ◽  
Gas Source ◽  
Step Model

ABSTRACTHigh-resolution X-ray diffraction (HRXRD) studies have been cardied out to determine the structural perfection and periodicity for a number of high-quality InGaAsfInP superlattices grown by gas source molecular beam epitaxy. X-ray scans were carried out with a compact four-crystal monochromator resulting in a resolution of one molecular layer (∼3,Å), which enables one to observe very small variations in the periodic structure. Sharp and strong higher-order satellite reflections in the XRD profiles were observed indicating smooth interfaces with well-defined modulated structures. Excellent computer simulated fits of the X-ray satellite pattern could be generated based on a kinematical XRD step model which assumes ideally sharp interfaces, and periodic structural parameters such as the strain in the well could be extracted. Our results3 demonstrate that HRXRD in conjunction with the kinematical step model is a very sensitive method to assess periodic structural modifications in superlattices as a result of the precise growth conditions in the gas source MBE system.

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