scholarly journals Chip-Scalable, Room-Temperature, Zero-Bias, Graphene-Based Terahertz Detectors with Nanosecond Response Time

ACS Nano ◽  
2021 ◽  
Author(s):  
Mahdi Asgari ◽  
Elisa Riccardi ◽  
Osman Balci ◽  
Domenico De Fazio ◽  
Sachin M. Shinde ◽  
...  
Keyword(s):  
Response Time ◽  
Room Temperature ◽  
Zero Bias ◽  
Terahertz Detectors ◽  
Temperature Zero

scholarly journals Theoretical Simulation of a Room Temperature HgCdTe Long-Wave Detector for Fast Response − Operating Under Zero Bias Conditions

2017 ◽  
Vol 24 (4) ◽  
pp. 729-738
Author(s):  
Piotr Martyniuk ◽  
Małgorzata Kopytko ◽  
Paweł Madejczyk ◽  
Aleksandra Henig ◽  
Kacper Grodecki ◽  
...  
Keyword(s):  
Response Time ◽  
Active Layer ◽  
Room Temperature ◽  
Critical Role ◽  
Fast Response ◽  
Zero Bias ◽  
Theoretical Simulation ◽  
Device Architecture ◽  
Long Wave ◽  
Hgcdte Detector

AbstractThe paper reports on a long-wave infrared (cut-off wavelength ~ 9 μm) HgCdTe detector operating under nbiased condition and room temperature (300 K) for both short response time and high detectivity operation. The ptimal structure in terms of the response time and detectivity versus device architecture was shown. The response time of the long-wave (active layer Cd composition, xCd= 0.19) HgCdTe detector for 300 K was calculated at a level of τs~ 1 ns for zero bias condition, while the detectivity − at a level of D* ~ 109cmHz1/2/W assuming immersion. It was presented that parameters of the active layer and P+barrier layer play a critical role in order to reach τs≤ 1 ns. An extra series resistance related to the processing (RS+in a range 5−10 Ω) increased the response time more than two times (τs ~ 2.3 ns).

Room-temperature zero-bias plasmonic THz detection by asymmetric dual-grating-gate HEMT

2015 ◽  
Author(s):  
T. Watanabe ◽  
T. Kawasaki ◽  
A. Satou ◽  
S. Boubanga Tombet ◽  
T. Suemitsu ◽  
...  
Keyword(s):  
Room Temperature ◽  
Zero Bias ◽  
Temperature Zero ◽  
Thz Detection

scholarly journals A fast response, self-powered and room temperature near infrared-terahertz photodetector based on a MAPbI3/PEDOT:PSS composite

2020 ◽  
Vol 8 (35) ◽  
pp. 12148-12154 ◽  
Author(s):  
Yifan Li ◽  
Yating Zhang ◽  
Tengteng Li ◽  
Xin Tang ◽  
Mengyao Li ◽  
...  
Keyword(s):  
Response Time ◽  
Room Temperature ◽  
Near Infrared ◽  
Fast Response ◽  
Rapid Response ◽  
Self Powered

A novel self-powered NIR and THz PTE PD based on a (MAPbI3/PEDOT:PSS) composite with a rapid response time of 28 μs.

Monodispersed hierarchical ZnGa2O4 microflowers for self-powered solar-blind detection

2016 ◽  
Vol 4 (15) ◽  
pp. 3113-3118 ◽  
Author(s):  
Yue Teng ◽  
Le Xin Song ◽  
Wei Liu ◽  
Zhe Yuan Xu ◽  
Qing Shan Wang ◽  
...  
Keyword(s):  
Response Time ◽  
Bias Voltage ◽  
Dark Current ◽  
Blind Detection ◽  
Current Ratio ◽  
Zero Bias ◽  
Single Crystalline ◽  
Short Response Time ◽  
Solar Blind ◽  
Self Powered

We successfully synthesized ZnGa2O4 microflowers self-assembled by hexagonal single-crystalline nanopetals. The ZnGa2O4 crystal exhibits improved solar-blind detection performance such as short response time, large light to dark current ratio and high photocurrent stability under zero bias voltage.

scholarly journals A novel gas sensor based on porous α-Ni(OH)2 ultrathin nanosheet/reduced graphene oxide composites for room temperature detection of NOx

2016 ◽  
Vol 40 (5) ◽  
pp. 4678-4686 ◽  
Author(s):  
Ying Yang ◽  
Hongjie Wang ◽  
Linlin Wang ◽  
Yunlong Ge ◽  
Kan Kan ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Response Time ◽  
Reduced Graphene Oxide ◽  
Gas Sensor ◽  
Room Temperature ◽  
Temperature Detection ◽  
Reduced Graphene ◽  
Ultrathin Nanosheet ◽  
Oxide Composites

Porous α-Ni(OH)2 TNS/rGO composites have a sensitivity of 64.4% and a response time of 10.0 s to 97.0 ppm NOx.

scholarly journals Enhanced Humidity Sensing Response of SnO2/Silicon Nanopillar Array by UV Irradiation

Sensors ◽  
2019 ◽  
Vol 19 (9) ◽  
pp. 2141 ◽  
Author(s):  
Wei Li ◽  
Linlin Wang ◽  
Yun Cai ◽  
Peifeng Pan ◽  
Jinze Li ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Response Time ◽  
Specific Surface ◽  
Uv Irradiation ◽  
Recovery Time ◽  
Room Temperature ◽  
Uv Light ◽  
Humidity Sensing ◽  
Potential Applications ◽  
Humidity Sensitivity

In this work, a silicon nanopillar array was created with nanosphere lithography. SnO2 film was deposited on this nanostructure by magnetron sputtering to form an SnO2/silicon nanopillar array sensor. The humidity sensitivity, response time, and recovery time were all measured at room temperature (25 °C) with UV or without UV irradiation. As a result, the humidity sensitivity properties were improved by enlarging the specific surface area with ordered nanopillars and irradiating with UV light. These results indicate that nanostructure sensors have potential applications in the field of sensors.

DLTS studies of defects produced in n-type silicon by hydrogen implantation at low temperature

2002 ◽  
Vol 744 ◽  
Author(s):  
Takahide Sugiyama ◽  
Masayasu Ishiko ◽  
Shigeki Kanazawa ◽  
Yutaka Tokuda
Keyword(s):  
Activation Energy ◽  
Low Temperature ◽  
Room Temperature ◽  
Reverse Bias ◽  
Thermal Emission ◽  
Sample Temperature ◽  
Zero Bias ◽  
Type Silicon ◽  
Projected Range ◽  
Hydrogen Implantation

ABSTRACTMetastable defects are discovered in hydrogen-implanted n-type silicon. Hydrogen implantation was performed with the energy of 80 keV to a dose of 2×10 cm- at 109 K. After implantation, the sample temperature was raised to room temperature. DLTS measurements were carried out in the temperature range 80–290 K for fabricated diodes. When the sample is reverse-biased at 10V for 10 min at room temperature and then is cooled down to 80 K, three new peaks labeled EM1, EM2 and EM3 appear around 150, 190 and 240 K, respectively. The introduction of metastable defects is found to be characteristic of low temperature implantation. We have evaluated properties of EM1 in detail. EM1 with thermal emission activation energy of 0.29 eV has a peak in concentration around the depth of 0.64 μ m, which corresponds to the projected range of 80 keV hydrogen. EM1 is regenerated with the reverse bias applied around 270 K and is removed with the zero bias around 220 K.

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