Room-temperature zero-bias plasmonic THz detection by asymmetric dual-grating-gate HEMT

2015 ◽  
Author(s):  
T. Watanabe ◽  
T. Kawasaki ◽  
A. Satou ◽  
S. Boubanga Tombet ◽  
T. Suemitsu ◽  
...  
Keyword(s):  
Room Temperature ◽  
Zero Bias ◽  
Temperature Zero ◽  
Thz Detection

scholarly journals Chip-Scalable, Room-Temperature, Zero-Bias, Graphene-Based Terahertz Detectors with Nanosecond Response Time

ACS Nano ◽  
2021 ◽  
Author(s):  
Mahdi Asgari ◽  
Elisa Riccardi ◽  
Osman Balci ◽  
Domenico De Fazio ◽  
Sachin M. Shinde ◽  
...  
Keyword(s):  
Response Time ◽  
Room Temperature ◽  
Zero Bias ◽  
Terahertz Detectors ◽  
Temperature Zero

DLTS studies of defects produced in n-type silicon by hydrogen implantation at low temperature

2002 ◽  
Vol 744 ◽  
Author(s):  
Takahide Sugiyama ◽  
Masayasu Ishiko ◽  
Shigeki Kanazawa ◽  
Yutaka Tokuda
Keyword(s):  
Activation Energy ◽  
Low Temperature ◽  
Room Temperature ◽  
Reverse Bias ◽  
Thermal Emission ◽  
Sample Temperature ◽  
Zero Bias ◽  
Type Silicon ◽  
Projected Range ◽  
Hydrogen Implantation

ABSTRACTMetastable defects are discovered in hydrogen-implanted n-type silicon. Hydrogen implantation was performed with the energy of 80 keV to a dose of 2×10 cm- at 109 K. After implantation, the sample temperature was raised to room temperature. DLTS measurements were carried out in the temperature range 80–290 K for fabricated diodes. When the sample is reverse-biased at 10V for 10 min at room temperature and then is cooled down to 80 K, three new peaks labeled EM1, EM2 and EM3 appear around 150, 190 and 240 K, respectively. The introduction of metastable defects is found to be characteristic of low temperature implantation. We have evaluated properties of EM1 in detail. EM1 with thermal emission activation energy of 0.29 eV has a peak in concentration around the depth of 0.64 μ m, which corresponds to the projected range of 80 keV hydrogen. EM1 is regenerated with the reverse bias applied around 270 K and is removed with the zero bias around 220 K.

MODELING THE IMPEDANCE OF NANOSTRUCTURED PV IN SIMULINK/MATLAB

2013 ◽  
Vol 27 (20) ◽  
pp. 1350139 ◽  
Author(s):  
MOHAMMAD HOUSHMAND ◽  
MOHAMMAD. H. ZANDI ◽  
NIMA E. GORJI
Keyword(s):  
Room Temperature ◽  
Cell Structure ◽  
Complex Impedance ◽  
Impedance Measurement ◽  
Nyquist Plot ◽  
Equivalent Circuits ◽  
Zero Bias ◽  
Heterojunction Solar Cells ◽  
Solar Cell Structure ◽  
First Time

Impedance measurement is a common method to study the electrical properties of thin film photovoltaics. For the first time, we use the MATLAB/Simulink environment to extract the complex impedance of the nanostructured heterojunction solar cells. The impedance magnitude, phase and Nyquist plot of the PV are simulated in LTI Viewer and Impedance versus Frequency analysis tools of SimPower GUI block of Simulink. We examined a variety of the equivalent circuits consisting of capacitance, series and shunt resistances representing the solar cell structure. The model uses the parameters with values reported in the literature at room temperature and zero bias. The effect of the additional capacitance and resistances in the equivalent circuits on the impedance components of the cells is considered by Simulink environment.

scholarly journals Theoretical Simulation of a Room Temperature HgCdTe Long-Wave Detector for Fast Response − Operating Under Zero Bias Conditions

2017 ◽  
Vol 24 (4) ◽  
pp. 729-738
Author(s):  
Piotr Martyniuk ◽  
Małgorzata Kopytko ◽  
Paweł Madejczyk ◽  
Aleksandra Henig ◽  
Kacper Grodecki ◽  
...  
Keyword(s):  
Response Time ◽  
Active Layer ◽  
Room Temperature ◽  
Critical Role ◽  
Fast Response ◽  
Zero Bias ◽  
Theoretical Simulation ◽  
Device Architecture ◽  
Long Wave ◽  
Hgcdte Detector

AbstractThe paper reports on a long-wave infrared (cut-off wavelength ~ 9 μm) HgCdTe detector operating under nbiased condition and room temperature (300 K) for both short response time and high detectivity operation. The ptimal structure in terms of the response time and detectivity versus device architecture was shown. The response time of the long-wave (active layer Cd composition, xCd= 0.19) HgCdTe detector for 300 K was calculated at a level of τs~ 1 ns for zero bias condition, while the detectivity − at a level of D* ~ 109cmHz1/2/W assuming immersion. It was presented that parameters of the active layer and P+barrier layer play a critical role in order to reach τs≤ 1 ns. An extra series resistance related to the processing (RS+in a range 5−10 Ω) increased the response time more than two times (τs ~ 2.3 ns).

Light Detection and Carrier Transportation Mechanism in p-Type Si/n-Type Nanocrystalline FeSi2 Heterojunctions Produced via Radio-Frequency Magnetron Sputtering

2020 ◽  
Vol 20 (8) ◽  
pp. 5082-5088
Author(s):  
Pattarapol Sittisart ◽  
Nathaporn Promros ◽  
Rawiwan Chaleawpong ◽  
Peerasil Charoenyuenyao ◽  
Nattakorn Borwornpornmetee ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Leakage Current ◽  
Room Temperature ◽  
Near Infrared ◽  
Radio Frequency Magnetron Sputtering ◽  
Light Detection ◽  
Zero Bias ◽  
Nir Light ◽  
P Type ◽  
Carrier Transportation

In the current research, p-type Si/n-type nanocrystalline FeSi2 heterojunctions were fabricated at room temperature with an argon pressure of 2.66×10−1 Pa by means of the utilization of a radiofrequency magnetron sputtering technique. These heterojunctions were studied for the carrier transportation mechanism and near-infrared (NIR) light detection at various temperatures ranging from 300 K down to 150 K. At 300 K, the fabricated heterojunctions displayed a typical rectifying action together with substantial leakage current. At 150 K, the leakage current was clearly reduced by greater than four orders of magnitude. The value of the ideality factor (n) at 300 K was computed to be 1.87 and this was nearly constant under temperatures ranging from 300 down to 260 K. This implies that a recombination process was predominant. At temperatures lower than 250 K, the value of n was found to be more than 2. These results demonstrated that the carrier transportation mechanism was governed by a tunnelling process. A weak response for the irradiation of NIR light was observed at 300 K. At 150 K, the ratio of the photocurrent to the dark current evidently increased by more than two orders of magnitude. The detectivity at 150 K was 4.84×1010 cm Hz1/2 W−1 at zero bias voltage, which was clearly improved as compared to that at 300 K.

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