scholarly journals A fast response, self-powered and room temperature near infrared-terahertz photodetector based on a MAPbI3/PEDOT:PSS composite

2020 ◽  
Vol 8 (35) ◽  
pp. 12148-12154 ◽  
Author(s):  
Yifan Li ◽  
Yating Zhang ◽  
Tengteng Li ◽  
Xin Tang ◽  
Mengyao Li ◽  
...  
Keyword(s):  
Response Time ◽  
Room Temperature ◽  
Near Infrared ◽  
Fast Response ◽  
Rapid Response ◽  
Self Powered

A novel self-powered NIR and THz PTE PD based on a (MAPbI3/PEDOT:PSS) composite with a rapid response time of 28 μs.

A Self-powered and Sensitive Terahertz Photodetection based on PdSe2

2022 ◽  
Author(s):  
Jie Zhou ◽  
Xueyan Wang ◽  
Zhiqingzi Chen ◽  
Libo Zhang ◽  
Chengyu Yao ◽  
...  
Keyword(s):  
Homeland Security ◽  
Room Temperature ◽  
Performance Enhancement ◽  
Rapid Development ◽  
Rapid Response ◽  
Medical Sciences ◽  
Terahertz Detection ◽  
Order Of Magnitude ◽  
Self Powered ◽  
Low Dimensional

Abstract With the rapid development of terahertz technology, terahertz detectors are expected to play a key role in diverse areas such as homeland security and imaging, materials diagnostics, biology and medical sciences, communication. Whereas self-powered, rapid response, and room temperature terahertz photodetectors are confronted with huge challenges. Here, we report a novel rapid response and self-powered terahertz photothermoelectronic (PTE) photodetector based on a low-dimensional material: palladium selenide (PdSe2). An order of magnitude performance enhancement was observed in photodetection based on PdSe2/graphene heterojunction that resulted from the integration of graphene and enhanced the Seebeck effect. Under 0.1 THz and 0.3 THz irradiation, the device displays a stable and repeatable photoresponse at room temperature without bias. Furthermore, rapid rise (5.0 μs) and decay (5.4 μs) times are recorded under 0.1 THz irradiation. Our results demonstrate the promising prospect of the detector based on PdSe2 in terms of air-stable, suitable sensitivity, and speed, which may have great application in terahertz detection.

scholarly journals Highly active and porous single-crystal In2O3 nanosheet for NOx gas sensor with excellent response at room temperature

RSC Advances ◽  
2017 ◽  
Vol 7 (53) ◽  
pp. 33419-33425 ◽  
Author(s):  
Li Sun ◽  
Wencheng Fang ◽  
Ying Yang ◽  
Hui Yu ◽  
Tingting Wang ◽  
...  
Keyword(s):  
Detection Limit ◽  
Response Time ◽  
Single Crystal ◽  
Gas Sensor ◽  
Room Temperature ◽  
Fast Response ◽  
Fast Response Time ◽  
Excellent Response ◽  
Highly Active ◽  
Nox Gas Sensor

Porous single-crystal In2O3 nanosheet was well-designed and prepared through calcination after liquid reflux, then exhibited a distinguished response, fast response time to NOx with good selectivity and low detection limit at room temperature.

scholarly journals Theoretical Simulation of a Room Temperature HgCdTe Long-Wave Detector for Fast Response − Operating Under Zero Bias Conditions

2017 ◽  
Vol 24 (4) ◽  
pp. 729-738
Author(s):  
Piotr Martyniuk ◽  
Małgorzata Kopytko ◽  
Paweł Madejczyk ◽  
Aleksandra Henig ◽  
Kacper Grodecki ◽  
...  
Keyword(s):  
Response Time ◽  
Active Layer ◽  
Room Temperature ◽  
Critical Role ◽  
Fast Response ◽  
Zero Bias ◽  
Theoretical Simulation ◽  
Device Architecture ◽  
Long Wave ◽  
Hgcdte Detector

AbstractThe paper reports on a long-wave infrared (cut-off wavelength ~ 9 μm) HgCdTe detector operating under nbiased condition and room temperature (300 K) for both short response time and high detectivity operation. The ptimal structure in terms of the response time and detectivity versus device architecture was shown. The response time of the long-wave (active layer Cd composition, xCd= 0.19) HgCdTe detector for 300 K was calculated at a level of τs~ 1 ns for zero bias condition, while the detectivity − at a level of D* ~ 109cmHz1/2/W assuming immersion. It was presented that parameters of the active layer and P+barrier layer play a critical role in order to reach τs≤ 1 ns. An extra series resistance related to the processing (RS+in a range 5−10 Ω) increased the response time more than two times (τs ~ 2.3 ns).

scholarly journals 2D Materials in Infrared Detector Family

Proceedings ◽  
2019 ◽  
Vol 27 (1) ◽  
pp. 33
Author(s):  
Antoni Rogalski
Keyword(s):  
High Temperature ◽  
Response Time ◽  
Near Infrared ◽  
2D Materials ◽  
Infrared Detector ◽  
High Sensitivity ◽  
Fast Response ◽  
Two Dimensional ◽  
Semiconducting Material ◽  
Thz Detectors

The paper compares two-dimensional (2D) material detectors performance with traditionally and commercially available ones operating in high temperature conditions. The most effective single graphene detectors are THz detectors which utilize plasma rectification phenomena in FETs. Most of 2D layered semiconducting material photodetectors operate at the visible and near-infrared regions and generally their high sensitivity does not coincide with a fast response time, which limits real detector functions.

sbRIO Lab–On–Chip Gas Sensing and Monitoring for Multisensory Array

2013 ◽  
Vol 61 (2) ◽  
Author(s):  
Siti Noradhlia Mohamad Tukijan ◽  
Mohd Azhar Abdul Razak ◽  
Fauzan Khairi Che Harun
Keyword(s):  
Response Time ◽  
Real Time ◽  
Virtual Instrument ◽  
Room Temperature ◽  
Gas Sensing ◽  
Fast Response ◽  
Lab On Chip ◽  
Flow Through ◽  
On Chip ◽  
Early Preparation

It is utmost to create a system at which can monitor and indicate the gas level exist in certain area, especially for hazardous gas, as early preparation and protection before something worst happen. The gas sensing and monitoring system composes of hardware and software elements. A spiral chamber which is simplified on chip, known as Lab–On–Chip (LOC), plays an important role in this system. The examined gases will be analysed by 16 sensors during the flow through the spiral chamber. The responses of these sensors are obtained via analogue input channels from single board RIO (sbRIO) and are displayed on a computer using LabVIEW virtual instrument software. The system offers portable, real–time monitoring and fast response time even in room temperature.

Synthesis of vertically-aligned large-area MoS2 nanofilm and its application in MoS2/Si heterostructure photodetector

2021 ◽  
Author(s):  
Yong Lei ◽  
Xiao-Zhan Yang ◽  
Wenlin Feng
Keyword(s):  
Near Infrared ◽  
Transition Metal Dichalcogenides ◽  
Response Speed ◽  
Fast Response ◽  
Large Area ◽  
Potential Applications ◽  
Metal Dichalcogenides ◽  
Vertically Aligned ◽  
Deep Ultraviolet ◽  
Self Powered

Abstract Van der Waals heterostructures based on the combination of 2D transition metal dichalcogenides (TMDCs) and conventional semiconductors offer new opportunities for the next generation of optoelectronics. In this work, the sulfurization of Mo film is used to synthesize vertically-aligned MoS2 nanofilm (V-MoS2) with wafer-size and layer controllability. The V-MoS2/n-Si heterojunction was fabricated by using a 20-nm thickness V-MoS2, and the self-powered broadband photodetectors covering from deep ultraviolet to near infrared is achieved. The device shows superior responsivity (5.06 mA/W), good photodetectivity (5.36×1011 Jones) and high on/off ratio Ion/Ioff (8.31 ×103 at 254 nm). Furthermore, the V-MoS2/n-Si heterojunction device presents a fast response speed with the rise time and fall time being 54.53 ms and 97.83 ms, respectiveely. The high photoelectric performances could be attributed to the high-quality heterojunction between the V-MoS2 and n-Si. These findings suggest that the V-MoS2/n-Si heterojunction has great potential applications in the deep ultraviolet-near infrared detection field, and might be used as a part of the construction of integrated optoelectronic systems.

A highly sensitive flexible SnS thin film photodetector in the ultraviolet to near infrared prepared by chemical bath deposition

RSC Advances ◽  
2016 ◽  
Vol 6 (116) ◽  
pp. 114980-114988 ◽  
Author(s):  
Mohamed S. Mahdi ◽  
K. Ibrahim ◽  
A. Hmood ◽  
Naser M. Ahmed ◽  
Shrook A. Azzez ◽  
...  
Keyword(s):  
Thin Film ◽  
Response Time ◽  
Chemical Bath Deposition ◽  
Near Infrared ◽  
Broad Band ◽  
Fast Response ◽  
Industrial Applications ◽  
Fast Response Time ◽  
Highly Sensitive ◽  
High Photosensitivity

A novel flexible broad band UV-vis-NIR SnS photodetector with high photosensitivity and fast response time for scientific and industrial applications.

An In2O3 nanorod-decorated reduced graphene oxide composite as a high-response NOx gas sensor at room temperature

2017 ◽  
Vol 41 (15) ◽  
pp. 7517-7523 ◽  
Author(s):  
Wencheng Fang ◽  
Ying Yang ◽  
Hui Yu ◽  
Xiangting Dong ◽  
Ruihong Wang ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Detection Limit ◽  
Response Time ◽  
Reduced Graphene Oxide ◽  
Gas Sensor ◽  
Room Temperature ◽  
Fast Response ◽  
Oxide Composite ◽  
Reduced Graphene ◽  
Nox Gas Sensor

An In2O3 nanorod-decorated reduced graphene oxide composite has been successfully synthesized, and this composite shows a good response, fast response time to NOx with good selectivity and low detection limit at room temperature.

The enhancement of a self-powered UV photodetector based on vertically aligned Ag-modified ZnO nanowires

RSC Advances ◽  
2015 ◽  
Vol 5 (82) ◽  
pp. 66738-66741 ◽  
Author(s):  
Yiyu Zeng ◽  
Xinhua Pan ◽  
Wen Dai ◽  
Yunchao Chen ◽  
Zhizhen Ye
Keyword(s):  
Response Time ◽  
Fast Response ◽  
Zno Nanowires ◽  
Uv Detection ◽  
Ag Nanoparticle ◽  
Uv Detector ◽  
Excellent Performance ◽  
Uv Photodetector ◽  
Vertically Aligned ◽  
Self Powered

A Ag nanoparticle-modified ZnO NWs based UV detector displays an excellent performance in UV detection such as high responsivity and fast response time.

Sign in / Sign up

Export Citation Format

Share Document