Contaminant-Free Wafer-Scale Assembled h-BN/Graphene van der Waals Heterostructures for Graphene Field-Effect Transistors

2021 ◽  
Author(s):  
Xuedong Gao ◽  
Cui Yu ◽  
Zezhao He ◽  
Jianchao Guo ◽  
Qingbin Liu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Van Der Waals ◽  
Van Der Waals Heterostructures ◽  
Wafer Scale

Tunable Schottky and Ohmic contacts in graphene and tellurene van der Waals heterostructures

2019 ◽  
Vol 21 (42) ◽  
pp. 23611-23619 ◽  
Author(s):  
Xinming Qin ◽  
Wei Hu ◽  
Jinlong Yang
Keyword(s):  
Electric Field ◽  
Field Effect ◽  
Ohmic Contacts ◽  
Field Effect Transistors ◽  
Van Der Waals ◽  
Interlayer Coupling ◽  
Van Der Waals Heterostructures ◽  
Potential Applications

Electric field and interlayer coupling tunable Schottky and Ohmic contacts in graphene and tellurene van der Waals heterostructures have been predicted theoretically to expect potential applications in graphene-based field-effect transistors.

Mobility Engineering in Vertical Field Effect Transistors Based on Van der Waals Heterostructures

2018 ◽  
Vol 30 (9) ◽  
pp. 1704435 ◽  
Author(s):  
Yong Seon Shin ◽  
Kiyoung Lee ◽  
Young Rae Kim ◽  
Hyangsook Lee ◽  
I. Min Lee ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Van Der Waals ◽  
Van Der Waals Heterostructures ◽  
Vertical Field ◽  
Vertical Field Effect

Spin tunnel field-effect transistors based on two-dimensional van der Waals heterostructures

2019 ◽  
Vol 2 (4) ◽  
pp. 159-163 ◽  
Author(s):  
Shengwei Jiang ◽  
Lizhong Li ◽  
Zefang Wang ◽  
Jie Shan ◽  
Kin Fai Mak
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Van Der Waals ◽  
Two Dimensional ◽  
Van Der Waals Heterostructures

Wafer Scale Graphene Field Effect Transistors on Thin Thermal Oxide

2018 ◽  
Vol 86 (2) ◽  
pp. 51-57
Author(s):  
Arul Vigneswar Ravichandran ◽  
Jaebeom Lee ◽  
Lanxia Cheng ◽  
Antonio Tomas Lucero ◽  
Chadwin D Young ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Wafer Scale ◽  
Thermal Oxide

scholarly journals Growth of high-quality semiconducting tellurium films for high-performance p-channel field-effect transistors with wafer-scale uniformity

2022 ◽  
Vol 6 (1) ◽  
Author(s):  
Taikyu Kim ◽  
Cheol Hee Choi ◽  
Pilgyu Byeon ◽  
Miso Lee ◽  
Aeran Song ◽  
...  
Keyword(s):  
Field Effect ◽  
Physical Vapor Deposition ◽  
High Performance ◽  
Supply Voltage ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Three Dimensional ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Wafer Scale

AbstractAchieving high-performance p-type semiconductors has been considered one of the most challenging tasks for three-dimensional vertically integrated nanoelectronics. Although many candidates have been presented to date, the facile and scalable realization of high-mobility p-channel field-effect transistors (FETs) is still elusive. Here, we report a high-performance p-channel tellurium (Te) FET fabricated through physical vapor deposition at room temperature. A growth route involving Te deposition by sputtering, oxidation and subsequent reduction to an elemental Te film through alumina encapsulation allows the resulting p-channel FET to exhibit a high field-effect mobility of 30.9 cm2 V−1 s−1 and an ION/OFF ratio of 5.8 × 105 with 4-inch wafer-scale integrity on a SiO2/Si substrate. Complementary metal-oxide semiconductor (CMOS) inverters using In-Ga-Zn-O and 4-nm-thick Te channels show a remarkably high gain of ~75.2 and great noise margins at small supply voltage of 3 V. We believe that this low-cost and high-performance Te layer can pave the way for future CMOS technology enabling monolithic three-dimensional integration.

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