Wafer Scale Graphene Field Effect Transistors on Thin Thermal Oxide

2018 ◽  
Vol 86 (2) ◽  
pp. 51-57
Author(s):  
Arul Vigneswar Ravichandran ◽  
Jaebeom Lee ◽  
Lanxia Cheng ◽  
Antonio Tomas Lucero ◽  
Chadwin D Young ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Wafer Scale ◽  
Thermal Oxide

scholarly journals Growth of high-quality semiconducting tellurium films for high-performance p-channel field-effect transistors with wafer-scale uniformity

2022 ◽  
Vol 6 (1) ◽  
Author(s):  
Taikyu Kim ◽  
Cheol Hee Choi ◽  
Pilgyu Byeon ◽  
Miso Lee ◽  
Aeran Song ◽  
...  
Keyword(s):  
Field Effect ◽  
Physical Vapor Deposition ◽  
High Performance ◽  
Supply Voltage ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Three Dimensional ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Wafer Scale

AbstractAchieving high-performance p-type semiconductors has been considered one of the most challenging tasks for three-dimensional vertically integrated nanoelectronics. Although many candidates have been presented to date, the facile and scalable realization of high-mobility p-channel field-effect transistors (FETs) is still elusive. Here, we report a high-performance p-channel tellurium (Te) FET fabricated through physical vapor deposition at room temperature. A growth route involving Te deposition by sputtering, oxidation and subsequent reduction to an elemental Te film through alumina encapsulation allows the resulting p-channel FET to exhibit a high field-effect mobility of 30.9 cm2 V−1 s−1 and an ION/OFF ratio of 5.8 × 105 with 4-inch wafer-scale integrity on a SiO2/Si substrate. Complementary metal-oxide semiconductor (CMOS) inverters using In-Ga-Zn-O and 4-nm-thick Te channels show a remarkably high gain of ~75.2 and great noise margins at small supply voltage of 3 V. We believe that this low-cost and high-performance Te layer can pave the way for future CMOS technology enabling monolithic three-dimensional integration.

Wafer‐Scale Organic Complementary Inverters Fabricated with Self‐Assembled Monolayer Field‐Effect Transistors

2020 ◽  
Vol 6 (9) ◽  
pp. 2000515
Author(s):  
Baolin Zhao ◽  
Bastian Gothe ◽  
Marco Sarcletti ◽  
Yuhan Zhao ◽  
Tobias Rejek ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Self Assembled Monolayer ◽  
Wafer Scale ◽  
Complementary Inverters ◽  
Self Assembled

Field-effect transistors based on wafer-scale, highly uniform few-layer p-type WSe2

Nanoscale ◽  
2016 ◽  
Vol 8 (4) ◽  
pp. 2268-2276 ◽  
Author(s):  
Philip M. Campbell ◽  
Alexey Tarasov ◽  
Corey A. Joiner ◽  
Meng-Yen Tsai ◽  
Georges Pavlidis ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Wafer Scale ◽  
P Type ◽  
Highly Uniform

Dual-gated field-effect transistors made from wafer-scale synthetic few-layer molybdenum disulfide

2014 ◽  
Author(s):  
A. Tarasov ◽  
P. M. Campbell ◽  
M.-Y. Tsai ◽  
Z. Hesabi ◽  
J. Feirer ◽  
...  
Keyword(s):  
Molybdenum Disulfide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Wafer Scale

Highly stable 2D material (2DM) field-effect transistors (FETs) with wafer-scale multidyad encapsulation

2016 ◽  
Vol 28 (5) ◽  
pp. 055203
Author(s):  
Choong-Ki Kim ◽  
Eun Gyo Jeong ◽  
Eungtaek Kim ◽  
Jeong-Gyu Song ◽  
Youngjun Kim ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
2D Material ◽  
Wafer Scale

Wafer-Scale Statistical Analysis of Graphene Field-Effect Transistors—Part II: Analysis of Device Properties

2017 ◽  
Vol 64 (9) ◽  
pp. 3927-3933 ◽  
Author(s):  
Anderson D. Smith ◽  
Stefan Wagner ◽  
Satender Kataria ◽  
B. Gunnar Malm ◽  
Max C. Lemme ◽  
...  
Keyword(s):  
Statistical Analysis ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Wafer Scale ◽  
Device Properties
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