High-Performance Visible-Blind UV Phototransistors Based on n-Type Naphthalene Diimide Nanomaterials

2018 ◽  
Vol 10 (14) ◽  
pp. 11826-11836 ◽  
Author(s):  
Inho Song ◽  
Seung-Chul Lee ◽  
Xiaobo Shang ◽  
Jaeyong Ahn ◽  
Hoon-Joo Jung ◽  
...  
2018 ◽  
Vol 10 (9) ◽  
pp. 8102-8109 ◽  
Author(s):  
Jingjing Yu ◽  
Kashif Javaid ◽  
Lingyan Liang ◽  
Weihua Wu ◽  
Yu Liang ◽  
...  

2008 ◽  
Vol 92 (3) ◽  
pp. 033507 ◽  
Author(s):  
Bayram Butun ◽  
Turgut Tut ◽  
Erkin Ulker ◽  
Tolga Yelboga ◽  
Ekmel Ozbay

2008 ◽  
Vol 93 (12) ◽  
pp. 123309 ◽  
Author(s):  
M. Nakano ◽  
T. Makino ◽  
A. Tsukazaki ◽  
K. Ueno ◽  
A. Ohtomo ◽  
...  

2015 ◽  
Vol 27 (15) ◽  
pp. 5230-5237 ◽  
Author(s):  
Joonhyeong Choi ◽  
Ki-Hyun Kim ◽  
Hojeong Yu ◽  
Changyeon Lee ◽  
Hyunbum Kang ◽  
...  

2003 ◽  
Vol 764 ◽  
Author(s):  
Ibrahim Kimukin ◽  
Necmi Biyikli ◽  
Tolga Kartaloglu ◽  
Orhan Aytür ◽  
Ekmel Ozbay

AbstractWe have designed, fabricated and tested resonant cavity enhanced visible-blind AlGaN-based Schottky photodiodes. The bottom mirror of the resonant cavity was formed with a 20 pair AlN/AlGaN Bragg mirror. The devices were fabricated using a microwave compatible fabrication process. Au and indium-tin-oxide (ITO) thin films were used for Schottky contact formation. ITO and Au-Schottky devices exhibited resonant peaks with 0.153 A/W and 0.046 A/W responsivity values at 337 nm and 350 nm respectively. Temporal high-speed measurements at 357 nm resulted in fast pulse responses with pulse widths as short as 77 ps. The fastest UV detector had a 3-dB bandwidth of 780 MHz.


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