Enhancing the Photovoltage of Ni/n-Si Photoanode for Water Oxidation through a Rapid Thermal Process

2018 ◽  
Vol 10 (10) ◽  
pp. 8594-8598 ◽  
Author(s):  
Shengyang Li ◽  
Guangwei She ◽  
Cheng Chen ◽  
Shaoyang Zhang ◽  
Lixuan Mu ◽  
...  
Keyword(s):  
Water Oxidation ◽  
Thermal Process ◽  
Rapid Thermal Process

Nitrogen-doped Czochralski silicon treated in rapid thermal process

2006 ◽  
Vol 134 (2-3) ◽  
pp. 193-201 ◽  
Author(s):  
Deren Yang ◽  
Ming Li ◽  
Can Cui ◽  
Xiangyang Ma ◽  
Duanlin Que
Keyword(s):  
Thermal Process ◽  
Rapid Thermal Process ◽  
Nitrogen Doped ◽  
Czochralski Silicon

Non-Prefabricated Nanocrystal Mesoporous TiO2-Based Photoanodes Tuned by A Layer-by-Layer and Rapid Thermal Process

2009 ◽  
Vol 2 (1) ◽  
pp. 265-269 ◽  
Author(s):  
Junchao Tao ◽  
Yan Sun ◽  
Meiying Ge ◽  
Xin Chen ◽  
Ning Dai
Keyword(s):  
Thermal Process ◽  
Mesoporous Tio2 ◽  
Layer By Layer ◽  
Rapid Thermal Process

Intermediate band materials obtained by rapid thermal process of Co-implanted silicon

2017 ◽  
Vol 209 ◽  
pp. 522-524 ◽  
Author(s):  
Jiren Yuan ◽  
Haibin Huang ◽  
Xinhua Deng ◽  
Mingang Gong ◽  
Cuicui Liu ◽  
...  
Keyword(s):  
Thermal Process ◽  
Rapid Thermal Process ◽  
Intermediate Band

Induced changes on visible emission and conductive type in N-doped ZnO films by rapid thermal process

2010 ◽  
Vol 28 (5) ◽  
pp. 1115-1121 ◽  
Author(s):  
Z. P. Shan ◽  
S. L. Gu ◽  
K. P. Wu ◽  
S. M. Zhu ◽  
K. Tang ◽  
...  
Keyword(s):  
Thermal Process ◽  
Visible Emission ◽  
Zno Films ◽  
Rapid Thermal Process ◽  
Doped Zno ◽  
Induced Changes

Growth Monitoring of Cu-Poor Prepared CuInS2 Thin Films

2001 ◽  
Vol 668 ◽  
Author(s):  
Ilka V. Luck ◽  
Jacobo Alvarez-Garcia ◽  
Lorenzo Calvo-Barrio ◽  
Axel Werner ◽  
Alejandro Perez-Rodriguez ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Thermal Process ◽  
Elemental Sulfur ◽  
Film Formation ◽  
Sample Surface ◽  
Growth Monitoring ◽  
Rapid Thermal Process ◽  
Intermediate Phases ◽  
Cuins2 Thin Films ◽  
Thin Film Formation

ABSTRACTThe CuInS2 thin film formation from a Cu/In precursor stack in the presence of elemental sulfur using a rapid thermal process under Cu-poor conditions has been studied. The process has been aborted at appropriate stages and the corresponding samples were investigated by XRD, Raman spectroscopy and SEM. The sulfurisation starts from elemental Cu and CuIn2. Elemental In and the binary phases Cu11In9 and Cu7In3 appear as intermediate phases. At the end of the sulfurisation the sample contains the ternary phases CuInS2 and CuIn5S8. CuS and β-In2S3 are detected by Raman spectroscopy at the sample surface and at distinct stages of the sulfurisation only. A difference in CuInS2 crystal quality is observed between the surface and the bottom of the samples.

Enhanced-Performance Germanium Nanowire Tunneling Field-Effect Transistors Using Flash-Assisted Rapid Thermal Process

2010 ◽  
Vol 31 (12) ◽  
pp. 1359-1361 ◽  
Author(s):  
Junghyo Nah ◽  
En-Shao Liu ◽  
Kamran M. Varahramyan ◽  
Dave Dillen ◽  
Steve McCoy ◽  
...  
Keyword(s):  
Field Effect ◽  
Thermal Process ◽  
Field Effect Transistors ◽  
Rapid Thermal Process ◽  
Tunneling Field Effect Transistors

Effects of Rapid Thermal Process Temperatures on Strain and Si Concentration Distributions in Ge-on-Insulator Structures Formed by Rapid Melt Growth

2014 ◽  
Vol 3 (7) ◽  
pp. Q33-Q35 ◽  
Author(s):  
J. J. Wen ◽  
D. L. Zhang ◽  
Z. Liu ◽  
T. W. Zhou ◽  
C. L. Xue ◽  
...  
Keyword(s):  
Thermal Process ◽  
Rapid Thermal Process ◽  
Melt Growth

Effect of nitrogen doping on denuded zone formed by rapid thermal process in Czochralski silicon wafer

2006 ◽  
Vol 376-377 ◽  
pp. 216-219 ◽  
Author(s):  
Can Cui ◽  
Deren Yang ◽  
Xiangyang Ma ◽  
Ruixin Fan ◽  
Liben Li ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Thermal Process ◽  
Nitrogen Doping ◽  
Rapid Thermal Process ◽  
Czochralski Silicon
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