In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications

2017 ◽  
Vol 9 (15) ◽  
pp. 13286-13292 ◽  
Author(s):  
Konstantin V. Egorov ◽  
Dmitry S. Kuzmichev ◽  
Pavel S. Chizhov ◽  
Yuri Yu. Lebedinskii ◽  
Cheol Seong Hwang ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Oxygen Vacancies ◽  
Atomic Layer ◽  
Resistive Switching Memory ◽  
Layer Deposition ◽  
In Situ Control ◽  
Memory Applications ◽  
Switching Memory

Atomic Layer Deposition of TiOx/Al2O3Bilayer Structures for Resistive Switching Memory Applications

2014 ◽  
Vol 20 (7-8-9) ◽  
pp. 282-290 ◽  
Author(s):  
Hehe Zhang ◽  
Nabeel Aslam ◽  
Marcel Reiners ◽  
Rainer Waser ◽  
Susanne Hoffmann-Eifert
Keyword(s):  
Atomic Layer Deposition ◽  
Resistive Switching ◽  
Atomic Layer ◽  
Resistive Switching Memory ◽  
Layer Deposition ◽  
Memory Applications ◽  
Switching Memory

scholarly journals Reliable resistive switching memory based on oxygen-vacancy-controlled bilayer structures

RSC Advances ◽  
2016 ◽  
Vol 6 (26) ◽  
pp. 21736-21741 ◽  
Author(s):  
Kyuhyun Park ◽  
Jang-Sik Lee
Keyword(s):  
Oxygen Vacancy ◽  
Atomic Layer Deposition ◽  
Aluminum Oxide ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Atomic Layer ◽  
Resistive Switching Memory ◽  
Layer Deposition ◽  
Aluminum Oxide Layer ◽  
Switching Memory

Reliable resistive switching memory devices were developed by controlling the oxygen vacancies in aluminum oxide layer during atomic layer deposition and by adopting bilayer structures.

Interface Electrical Properties of Al2O3 Thin Films on Graphene Obtained by Atomic Layer Deposition with an in Situ Seedlike Layer

2017 ◽  
Vol 9 (8) ◽  
pp. 7761-7771 ◽  
Author(s):  
Gabriele Fisichella ◽  
Emanuela Schilirò ◽  
Salvatore Di Franco ◽  
Patrick Fiorenza ◽  
Raffaella Lo Nigro ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition
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