Enhanced electrical properties of SrTiO3 thin films grown by atomic layer deposition at high temperature for dynamic random access memory applications

2008 ◽  
Vol 92 (22) ◽  
pp. 222903 ◽  
Author(s):  
Sang Woon Lee ◽  
Oh Seong Kwon ◽  
Jeong Hwan Han ◽  
Cheol Seong Hwang
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Random Access ◽  
Random Access Memory ◽  
Atomic Layer ◽  
Access Memory ◽  
Layer Deposition ◽  
Memory Applications

scholarly journals Effect of Electrode Material on the Crystallization of GeTe Grown by Atomic Layer Deposition for Phase Change Random Access Memory

Micromachines ◽  
2019 ◽  
Vol 10 (5) ◽  
pp. 281 ◽  
Author(s):  
Seung Ik Oh ◽  
In Hyuk Im ◽  
Chanyoung Yoo ◽  
Sung Yeon Ryu ◽  
Yong Kim ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Atomic Layer ◽  
Switching Behavior ◽  
Access Memory ◽  
Set Switching ◽  
Layer Deposition ◽  
Avrami Kinetics

The electrical switching behavior of the GeTe phase-changing material grown by atomic layer deposition is characterized for the phase change random access memory (PCRAM) application. Planar-type PCRAM devices are fabricated with a TiN or W bottom electrode (BE). The crystallization behavior is characterized by applying an electrical pulse train and analyzed by applying the Johnson–Mehl–Avrami kinetics model. The device with TiN BE shows a high Avrami coefficient (>4), meaning that continuous and multiple nucleations occur during crystallization (set switching). Meanwhile, the device with W BE shows a smaller Avrami coefficient (~3), representing retarded nucleation during the crystallization. In addition, larger voltage and power are necessary for crystallization in case of the device with W BE. It is believed that the thermal conductivity of the BE material affects the temperature distribution in the device, resulting in different crystallization kinetics and set switching behavior.

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