Electrical Characteristics of TiO2−X/TiO2 Resistive Switching Memory Fabricated by Atomic Layer Deposition

2016 ◽  
Vol 16 (6) ◽  
pp. 6304-6307 ◽  
Author(s):  
Kwan-Jun Heo ◽  
Won-You Kim ◽  
Sung-Jin Kim
Keyword(s):  
Atomic Layer Deposition ◽  
Resistive Switching ◽  
Atomic Layer ◽  
Electrical Characteristics ◽  
Resistive Switching Memory ◽  
Layer Deposition ◽  
Switching Memory

Atomic Layer Deposition of TiOx/Al2O3Bilayer Structures for Resistive Switching Memory Applications

2014 ◽  
Vol 20 (7-8-9) ◽  
pp. 282-290 ◽  
Author(s):  
Hehe Zhang ◽  
Nabeel Aslam ◽  
Marcel Reiners ◽  
Rainer Waser ◽  
Susanne Hoffmann-Eifert
Keyword(s):  
Atomic Layer Deposition ◽  
Resistive Switching ◽  
Atomic Layer ◽  
Resistive Switching Memory ◽  
Layer Deposition ◽  
Memory Applications ◽  
Switching Memory

SiO2 layer effect on atomic layer deposition Al2O3-based resistive switching memory

2019 ◽  
Vol 114 (18) ◽  
pp. 182102 ◽  
Author(s):  
Chandreswar Mahata ◽  
Min-Hwi Kim ◽  
Suhyun Bang ◽  
Tae-Hyeon Kim ◽  
Dong Keun Lee ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Resistive Switching ◽  
Atomic Layer ◽  
Sio2 Layer ◽  
Resistive Switching Memory ◽  
Layer Deposition ◽  
Layer Effect ◽  
Switching Memory

scholarly journals Reliable resistive switching memory based on oxygen-vacancy-controlled bilayer structures

RSC Advances ◽  
2016 ◽  
Vol 6 (26) ◽  
pp. 21736-21741 ◽  
Author(s):  
Kyuhyun Park ◽  
Jang-Sik Lee
Keyword(s):  
Oxygen Vacancy ◽  
Atomic Layer Deposition ◽  
Aluminum Oxide ◽  
Resistive Switching ◽  
Oxygen Vacancies ◽  
Atomic Layer ◽  
Resistive Switching Memory ◽  
Layer Deposition ◽  
Aluminum Oxide Layer ◽  
Switching Memory

Reliable resistive switching memory devices were developed by controlling the oxygen vacancies in aluminum oxide layer during atomic layer deposition and by adopting bilayer structures.

In Situ Control of Oxygen Vacancies in TaOx Thin Films via Plasma-Enhanced Atomic Layer Deposition for Resistive Switching Memory Applications

2017 ◽  
Vol 9 (15) ◽  
pp. 13286-13292 ◽  
Author(s):  
Konstantin V. Egorov ◽  
Dmitry S. Kuzmichev ◽  
Pavel S. Chizhov ◽  
Yuri Yu. Lebedinskii ◽  
Cheol Seong Hwang ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Oxygen Vacancies ◽  
Atomic Layer ◽  
Resistive Switching Memory ◽  
Layer Deposition ◽  
In Situ Control ◽  
Memory Applications ◽  
Switching Memory

Resistive switching properties of polycrystalline HfOxNyfilms by plasma-enhanced atomic layer deposition

2017 ◽  
Vol 56 (5) ◽  
pp. 050304 ◽  
Author(s):  
Jue Yu ◽  
Wei Huang ◽  
Chao Lu ◽  
Guangyang Lin ◽  
Cheng Li ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Resistive Switching ◽  
Atomic Layer ◽  
Layer Deposition
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