Interface Electrical Properties of Al2O3 Thin Films on Graphene Obtained by Atomic Layer Deposition with an in Situ Seedlike Layer

2017 ◽  
Vol 9 (8) ◽  
pp. 7761-7771 ◽  
Author(s):  
Gabriele Fisichella ◽  
Emanuela Schilirò ◽  
Salvatore Di Franco ◽  
Patrick Fiorenza ◽  
Raffaella Lo Nigro ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition

Electrical Properties of Srta2O6 Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition (Peald)

2001 ◽  
Vol 685 ◽  
Author(s):  
Won-Jae Lee ◽  
Chang-Ho Shin ◽  
In-Kyu You ◽  
Il-Suk Yang ◽  
Sang-Ouk Ryu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Leakage Current ◽  
Annealing Temperature ◽  
Atomic Layer ◽  
Si Substrates ◽  
Annealing Temperatures ◽  
Layer Deposition ◽  
Current Characteristics

AbstractThe SrTa2O6 (STO) thin films were prepared by plasma enhanced atomic layer deposition (PEALD) with alternating supply of reactant sources, Sr[Ta(C2H5O)5(C4H10NO)]2 {Strontium bis-[tantalum penta-ethoxide dimethyllaminoethoxide]; Sr(Ta(OEt)5▪dmae)2} and O2plasma. It was observed that the uniform and conformal STO thin films were successfully deposited using PEALD and the film thickness per cycle was saturated at about 0.8 nm at 300°C. Electrical properties of SrTa2O6 (STO) thin films prepared on Pt/SiO2/Si substrates with annealing temperatures have been investigated. While the grain size and dielectric constant of STO films increased with increasing annealing temperature, the leakage current characteristics of STO films slightly deteriorated. The leakage current density of a 40nm-STO film was about 5×10−8A/cm2 at 3V.

Enhanced Electrical Properties of SrTiO3 Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition

2011 ◽  
Vol 14 (10) ◽  
pp. G45 ◽  
Author(s):  
C. J. Yim ◽  
S. U. Kim ◽  
Y. S. Kang ◽  
M.-H. Cho ◽  
D.-H. Ko
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition

Improved electrical properties of Pt/HfO2/Ge using in situ water vapor treatment and atomic layer deposition

2011 ◽  
Vol 98 (10) ◽  
pp. 102905 ◽  
Author(s):  
In-Sung Park ◽  
Youngjae Choi ◽  
William T. Nichols ◽  
Jinho Ahn
Keyword(s):  
Water Vapor ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Vapor Treatment
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