Low-Temperature Ohmic Contact Formation in AlN/GaN HEMT Using Microwave Annealing

2017 ◽  
Vol 64 (3) ◽  
pp. 1385-1389 ◽  
Author(s):  
Lin-Qing Zhang ◽  
Zhuo Liu ◽  
Sheng-Xun Zhao ◽  
Min-Zhi Lin ◽  
Peng-Fei Wang
Keyword(s):  
Low Temperature ◽  
Ohmic Contact ◽  
Contact Formation ◽  
Microwave Annealing ◽  
Gan Hemt ◽  
Ohmic Contact Formation

Ohmic Contact Formation on Silicon-doped Gallium Nitride Epilayers by Low Temperature Annealing

2000 ◽  
Vol 338-342 ◽  
pp. 1619-1619
Author(s):  
L.S. Tan ◽  
A. Raman ◽  
K.M. Ng ◽  
S.J. Chua ◽  
A.T.S. Wee ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Low Temperature ◽  
Ohmic Contact ◽  
Science And Technology ◽  
Contact Formation ◽  
Low Temperature Annealing ◽  
Silicon Doped ◽  
Ohmic Contact Formation ◽  
Double Publication

“removed due to double publication”. The original paper: Journal: Semiconductor Science and Technology Create an alertIssue Volume 15, Number 6 Citation: L S Tan et al 2000 Semicond. Sci. Technol. 15 585 doi: 10.1088/0268-1242/15/6/317 can be accesses at IOP: http://iopscience.iop.org/0268-1242/15/6/317

Low resistive ohmic contact formation on surface treated-n-GaN alloyed at low temperature

2001 ◽  
Vol 30 (5) ◽  
pp. 532-537 ◽  
Author(s):  
Yow-Jon Lin ◽  
Hsin-Ying Lee ◽  
Fu-Tsai Hwang ◽  
Ching-Ting Lee
Keyword(s):  
Low Temperature ◽  
Ohmic Contact ◽  
Contact Formation ◽  
Ohmic Contact Formation

Laser Annealing Simulations of Metallisations Deposited on 4H-SiC

2019 ◽  
Vol 963 ◽  
pp. 502-505
Author(s):  
Clement Berger ◽  
Jean François Michaud ◽  
David Chouteau ◽  
Daniel Alquier
Keyword(s):  
Finite Elements ◽  
Low Temperature ◽  
Ohmic Contact ◽  
Laser Annealing ◽  
Finite Elements Method ◽  
Contact Formation ◽  
Thermal Simulations ◽  
Ohmic Contact Formation

Based on finite elements method, thermal simulations were conducted to reproduce a laser annealing of several common metals deposited on 4H-SiC. We estimated the temperature reached at the metal/4H-SiC interface to check the possibility to achieve ohmic contact formation through laser annealing. An optimization of Al/Ti/4H-SiC stacking was also considered. Simulations highlighted the low temperature of the non-irradiated SiC face that allows using grinded wafer.

Sign in / Sign up

Export Citation Format

Share Document