Effect of low-temperature baking on the radio-frequency properties of niobium superconducting cavities for particle accelerators

2004 ◽  
Vol 96 (3) ◽  
pp. 1591-1600 ◽  
Author(s):  
Gianluigi Ciovati
Keyword(s):  
Low Temperature ◽  
Radio Frequency ◽  
Particle Accelerators ◽  
Superconducting Cavities ◽  
Frequency Properties

Fluid and kinetic models of the low temperature H2 plasma produced by a radio-frequency reactor

2008 ◽  
Vol 15 (10) ◽  
pp. 103505 ◽  
Author(s):  
P. Diomede ◽  
A. Michau ◽  
M. Redolfi ◽  
W. Morscheidt ◽  
K. Hassouni ◽  
...  
Keyword(s):  
Low Temperature ◽  
Radio Frequency ◽  
Kinetic Models

Low-Temperature Baking Effect of the Radio-Frequency Nb3Sn Thin Film Superconducting Cavity

2021 ◽  
Vol 38 (9) ◽  
pp. 092901
Author(s):  
Ziqin Yang ◽  
Shichun Huang ◽  
Yuan He ◽  
Xiangyang Lu ◽  
Hao Guo ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Radio Frequency ◽  
Superconducting Cavity

scholarly journals Highly Deep Ultraviolet–Transparent h-BN Film Deposited on an Al0.7Ga0.3N Template by Low-Temperature Radio-Frequency Sputtering

Materials ◽  
2019 ◽  
Vol 12 (24) ◽  
pp. 4046
Author(s):  
Guo-Dong Hao ◽  
Manabu Taniguchi ◽  
Shin-ichiro Inoue
Keyword(s):  
Low Temperature ◽  
Radio Frequency ◽  
Hexagonal Boron Nitride ◽  
Annealing Treatment ◽  
Optical Transmittance ◽  
Hexagonal Structure ◽  
Light Transmittance ◽  
Radio Frequency Sputtering ◽  
Deep Ultraviolet ◽  
Deposition Processes

Hexagonal boron nitride (h-BN) is an attractive wide-bandgap material for application to emitters and detectors operating in the deep ultraviolet (DUV) spectral region. The optical transmittance of h-BN in the DUV region is particularly important for these devices. We report on the deposition of thick h-BN films (>200 nm) on Al0.7Ga0.3N templates via radio-frequency sputtering, along with the realization of ultrahigh transmittance in the DUV region. The fraction of the gas mixture (Ar/N2) was varied to investigate its effects on the optical transmittance of BN. DUV light transmittance of as high as 94% was achieved at 265 nm. This value could be further enhanced to exceed 98% by a post-annealing treatment at 800 °C in a N2 ambient for 20 min. The phase of the highly DUV–transparent BN film was determined to be a purely hexagonal structure via Raman spectra measurements. More importantly, these deposition processes were performed at a low temperature (300 °C), which can provide protection from device performance degradation when applied to actual devices.

scholarly journals High quality Al0.37In0.63N layers grown at low temperature (<300 °C) by radio-frequency sputtering

2019 ◽  
Vol 100 ◽  
pp. 8-14 ◽  
Author(s):  
A. Núñez-Cascajero ◽  
R. Blasco ◽  
S. Valdueza-Felip ◽  
D. Montero ◽  
J. Olea ◽  
...  
Keyword(s):  
Low Temperature ◽  
Radio Frequency ◽  
High Quality ◽  
Radio Frequency Sputtering

Low temperature radio frequency shielding of exfoliated graphite

Cryogenics ◽  
1994 ◽  
Vol 34 (11) ◽  
pp. 957-958 ◽  
Author(s):  
M. Rall ◽  
M.D. Evans ◽  
P.M. Andersen ◽  
N.S. Sullivan
Keyword(s):  
Low Temperature ◽  
Radio Frequency ◽  
Exfoliated Graphite

History and Technology Developments of Radio Frequency (RF) Systems for Particle Accelerators

2016 ◽  
Vol 63 (2) ◽  
pp. 707-750 ◽  
Author(s):  
A. Nassiri ◽  
B. Chase ◽  
P. Craievich ◽  
A. Fabris ◽  
H. Frischholz ◽  
...  
Keyword(s):  
Radio Frequency ◽  
Particle Accelerators ◽  
Rf Systems
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