scholarly journals Chemistry and Charge Trapping at the Interface of Silver and Ultrathin Layers of Zinc Oxide

2021 ◽  
Author(s):  
M. Rahamim ◽  
H. Cohen ◽  
E. Edri
Keyword(s):  
Zinc Oxide ◽  
Charge Trapping ◽  
Ultrathin Layers

Understanding charge trapping/detrapping at the zinc oxide (ZnO)/MAPbI3 perovskite interface in the dark and under illumination using a ZnO/perovskite/ZnO test platform

Nanoscale ◽  
2018 ◽  
Vol 10 (43) ◽  
pp. 20377-20383 ◽  
Author(s):  
Youngjun Kim ◽  
Byoungnam Park
Keyword(s):  
Zinc Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Charge Trapping ◽  
Lead Iodide ◽  
Test Platform ◽  
Interfacial Contact ◽  
Effect Transistor ◽  
Methylammonium Lead Iodide

We fabricated a zinc oxide (ZnO)/methylammonium lead iodide (MAPbI3) perovskite/ZnO field effect transistor (FET) test platform device through which ZnO/perovskite interfacial contact properties can be probed in the dark and under illumination.

scholarly journals Low power zinc-oxide based charge trapping memory with embedded silicon nanoparticles via poole-frenkel hole emission

2014 ◽  
Vol 104 (1) ◽  
pp. 013112 ◽  
Author(s):  
Nazek El-Atab ◽  
Ayse Ozcan ◽  
Sabri Alkis ◽  
Ali K. Okyay ◽  
Ammar Nayfeh
Keyword(s):  
Zinc Oxide ◽  
Low Power ◽  
Silicon Nanoparticles ◽  
Charge Trapping ◽  
Charge Trapping Memory

Electrical characteristics of gallium–indium–zinc oxide thin-film transistor non-volatile memory with Sm2O3 and SmTiO3 charge trapping layers

RSC Advances ◽  
2015 ◽  
Vol 5 (12) ◽  
pp. 8566-8570 ◽  
Author(s):  
Jim-Long Her ◽  
Fa-Hsyang Chen ◽  
Ching-Hung Chen ◽  
Tung-Ming Pan
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistor ◽  
Charge Trapping ◽  
Memory Device ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Electrical Characteristics ◽  
Non Volatile Memory ◽  
Volatile Memory

In this study, we report the structural and electrical characteristics of high-κ Sm2O3 and SmTiO3 charge trapping layers on an indium–gallium–zinc oxide (IGZO) thin-film transistor (TFT) for non-volatile memory device applications.

scholarly journals Zinc-oxide charge trapping memory cell with ultra-thin chromium-oxide trapping layer

AIP Advances ◽  
2013 ◽  
Vol 3 (11) ◽  
pp. 112116 ◽  
Author(s):  
Nazek El-Atab ◽  
Ayman Rizk ◽  
Ali K. Okyay ◽  
Ammar Nayfeh
Keyword(s):  
Zinc Oxide ◽  
Chromium Oxide ◽  
Charge Trapping ◽  
Memory Cell ◽  
Oxide Charge ◽  
Thin Chromium ◽  
Charge Trapping Memory

Poly-Si Nanowire Nonvolatile Memory With Nanocrystal Indium–Gallium–Zinc–Oxide Charge-Trapping Layer

2010 ◽  
Vol 31 (12) ◽  
pp. 1407-1409 ◽  
Author(s):  
Lun-Chun Chen ◽  
Yung-Chun Wu ◽  
Tien-Chun Lin ◽  
Jyun-Yang Huang ◽  
Min-Feng Hung ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Nonvolatile Memory ◽  
Charge Trapping ◽  
Indium Gallium Zinc Oxide ◽  
Oxide Charge ◽  
Si Nanowire ◽  
Indium Gallium

scholarly journals Channel Shape Effects on Device Instability of Amorphous Indium–Gallium–Zinc Oxide Thin Film Transistors

Micromachines ◽  
2020 ◽  
Vol 12 (1) ◽  
pp. 2
Author(s):  
Seung Gi Seo ◽  
Seung Jae Yu ◽  
Seung Yeob Kim ◽  
Jinheon Jeong ◽  
Sung Hun Jin
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Charge Trapping ◽  
Type A ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Channel Shape ◽  
Field Effects ◽  
Indium Gallium

Channel shape dependency on device instability for amorphous indium–gallium–zinc oxide (a-IGZO) thin film transistors (TFTs) is investigated by using various channel shape devices along with systematic electrical characterization including DC I-V characeristics and bias temperature stress tests. a-IGZO TFTs with various channel shapes such as zigzag, circular, and U-type channels are implemented and their vertical and lateral electric field stress (E-field) effects are systematically tested and analyzed by using an experimental and modeling study. Source and drain (S/D) electrode asymmetry and vertical E-field effects on device instability are neglibible, whereas the lateral E-field effects significantly affect device instability, particularly for zigzag channel shape, compared to circular and U-type TFTs. Moreover, charge trapping time (τ) for zigzag-type a-IGZO TFTs is extracted as 3.8 × 104, which is at least three-times smaller than those of other channel-type a-IGZO TFTs, hinting that local E-field enhancement can critically affect the device reliability. The Technology Computer Aided Design (TCAD) simulation results reveal the locally enhanced E-field at both corner region in the channel in a quantitative mode and its correlation with hemisphere radius (ρ) values.

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