Gate Bias Stress Instability and Hysteresis Characteristics of InAs Nanowire Field-Effect Transistors
Keyword(s):
2013 ◽
Keyword(s):
2019 ◽
Vol 481
◽
pp. 642-648
◽
2018 ◽
Vol 2
(9)
◽
pp. 1631-1641
◽
Keyword(s):
2018 ◽
Vol 84
◽
pp. 62-65
◽
Keyword(s):
Keyword(s):