The Origin of Excellent Gate-Bias Stress Stability in Organic Field-Effect Transistors Employing Fluorinated-Polymer Gate Dielectrics

2014 ◽  
Vol 26 (42) ◽  
pp. 7241-7246 ◽  
Author(s):  
Jiye Kim ◽  
Jaeyoung Jang ◽  
Kyunghun Kim ◽  
Haekyoung Kim ◽  
Se Hyun Kim ◽  
...  
Keyword(s):  
Field Effect ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Gate Bias ◽  
Organic Field Effect Transistors ◽  
Fluorinated Polymer ◽  
Bias Stress ◽  
Gate Bias Stress

scholarly journals Influence of the gate bias stress on the stability of n-type organic field-effect transistors based on dicyanovinylene–dihydroindenofluorene semiconductors

2018 ◽  
Vol 2 (9) ◽  
pp. 1631-1641 ◽  
Author(s):  
S. Bebiche ◽  
P. A. Cisneros-Perez ◽  
T. Mohammed-Brahim ◽  
M. Harnois ◽  
J. Rault-Berthelot ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Bias ◽  
Organic Field Effect Transistors ◽  
Bias Stress ◽  
The Stability ◽  
Gate Bias Stress

The electrical stabilities of n-type Organic Field-Effect Transistors (OFETs) based on dihydroindeno[1,2-b]fluorene and dihydroindeno[2,1-b]fluorene derivatives have been studied.

scholarly journals Scanning Kelvin probe microscopy on organic field-effect transistors during gate bias stress

2007 ◽  
Vol 90 (19) ◽  
pp. 192104 ◽  
Author(s):  
S. G. J. Mathijssen ◽  
M. Cölle ◽  
A. J. G. Mank ◽  
M. Kemerink ◽  
P. A. Bobbert ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Bias ◽  
Organic Field Effect Transistors ◽  
Kelvin Probe ◽  
Probe Microscopy ◽  
Kelvin Probe Microscopy ◽  
Bias Stress ◽  
Scanning Kelvin Probe ◽  
Gate Bias Stress

Gate-bias stress-dependent photoconductive characteristics of multi-layer MoS2 field-effect transistors

2014 ◽  
Vol 25 (15) ◽  
pp. 155201 ◽  
Author(s):  
Kyungjune Cho ◽  
Tae-Young Kim ◽  
Woanseo Park ◽  
Juhun Park ◽  
Dongku Kim ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Bias ◽  
Bias Stress ◽  
Stress Dependent ◽  
Gate Bias Stress

Gate Bias Stress Instability and Hysteresis Characteristics of InAs Nanowire Field-Effect Transistors

2020 ◽  
Vol 12 (50) ◽  
pp. 56330-56337
Author(s):  
Changyong Lan ◽  
SenPo Yip ◽  
Xiaolin Kang ◽  
You Meng ◽  
Xiuming Bu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Bias ◽  
Bias Stress ◽  
Hysteresis Characteristics ◽  
Gate Bias Stress
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