scholarly journals Scanning Kelvin probe microscopy on organic field-effect transistors during gate bias stress

2007 ◽  
Vol 90 (19) ◽  
pp. 192104 ◽  
Author(s):  
S. G. J. Mathijssen ◽  
M. Cölle ◽  
A. J. G. Mank ◽  
M. Kemerink ◽  
P. A. Bobbert ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Bias ◽  
Organic Field Effect Transistors ◽  
Kelvin Probe ◽  
Probe Microscopy ◽  
Kelvin Probe Microscopy ◽  
Bias Stress ◽  
Scanning Kelvin Probe ◽  
Gate Bias Stress

scholarly journals Influence of the gate bias stress on the stability of n-type organic field-effect transistors based on dicyanovinylene–dihydroindenofluorene semiconductors

2018 ◽  
Vol 2 (9) ◽  
pp. 1631-1641 ◽  
Author(s):  
S. Bebiche ◽  
P. A. Cisneros-Perez ◽  
T. Mohammed-Brahim ◽  
M. Harnois ◽  
J. Rault-Berthelot ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Bias ◽  
Organic Field Effect Transistors ◽  
Bias Stress ◽  
The Stability ◽  
Gate Bias Stress

The electrical stabilities of n-type Organic Field-Effect Transistors (OFETs) based on dihydroindeno[1,2-b]fluorene and dihydroindeno[2,1-b]fluorene derivatives have been studied.

Gate-bias stress-dependent photoconductive characteristics of multi-layer MoS2 field-effect transistors

2014 ◽  
Vol 25 (15) ◽  
pp. 155201 ◽  
Author(s):  
Kyungjune Cho ◽  
Tae-Young Kim ◽  
Woanseo Park ◽  
Juhun Park ◽  
Dongku Kim ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Gate Bias ◽  
Bias Stress ◽  
Stress Dependent ◽  
Gate Bias Stress

scholarly journals Correlation between surface morphology and potential profile in OFETs with zone-cast TIPS-Pentacene as seen by scanning Kelvin probe microscopy

2019 ◽  
Vol 37 (2) ◽  
pp. 249-256
Author(s):  
M. Kucinska ◽  
M.Z. Szymanski ◽  
I. Frac ◽  
F. Chandezon ◽  
J. Ulanski
Keyword(s):  
Surface Morphology ◽  
Field Effect Transistors ◽  
Potential Profile ◽  
Semiconductor Layer ◽  
Kelvin Probe ◽  
Transistor Channel ◽  
Probe Microscopy ◽  
Kelvin Probe Microscopy ◽  
Scanning Kelvin Probe ◽  
Anisotropic Layers

AbstractCharge-carrier transport in the channel of bottom gate, top contact organic field effect transistors with anisotropic layers of 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-Pentacene) obtained by zone casting was investigated using scanning Kelvin probe microscopy combined with atomic force microscopy. The TIPS-Pentacene continuous layers consisted of thin crystals unidirectionally oriented in the channel. Devices with perpendicular and parallel charge flow in the transistor channel were prepared. It was found that irregularities in the surface morphology at the semiconductor layer in the transistor channel are correlated with the local potential profile, and that the channel resistance strongly depends on the orientation of the TIPS-Pentacene crystals.

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