Photo-Thermoelectric Conversion Using Black Silicon with Enhanced Light Trapping Performance far beyond the Band Edge Absorption

2021 ◽  
Author(s):  
Pengfei Cheng ◽  
Honglei Wang ◽  
Björn Müller ◽  
Jens Müller ◽  
Dong Wang ◽  
...  
Keyword(s):  
Light Trapping ◽  
Band Edge ◽  
Black Silicon ◽  
Edge Absorption ◽  
Thermoelectric Conversion ◽  
Trapping Performance

The Effects of Composition on the Spectral Loss Characteristics of SiGe Planar Waveguide Structures

1992 ◽  
Vol 281 ◽  
Author(s):  
Yang Zuoya ◽  
B. L. Weiss ◽  
G. Shao ◽  
F. Namavar
Keyword(s):  
Optical Properties ◽  
Planar Waveguide ◽  
Waveguide Structure ◽  
Propagation Loss ◽  
Band Edge ◽  
Optical Confinement ◽  
Structural And Optical Properties ◽  
Edge Absorption

ABSTRACTThe effect of the Si:Ge ratio in SiGe/Si heterostructures on the structural and optical properties of SiGe/Si planar waveguide are reported here for Ge concentrations from 1 to 33.6%. The high propagation loss at 1.15 pm is due to band edge absorption, which increases as the Ge concentration increases, while the loss at longer wavelengths (1.523 pm) increases with decreasing Si concentration, due to the reduced optical confinement of the waveguide structure.

Design of Black Silicon with Ultra-Light-Trapping Structure

2011 ◽  
Vol 31 (10) ◽  
pp. 1005007 ◽  
Author(s):  
钱超峰 Qian Chaofeng ◽  
王庆康 Wang Qingkang ◽  
李海华 Li Haihua
Keyword(s):  
Light Trapping ◽  
Black Silicon

A normal-incidence PtSi photoemissive detector with black silicon light-trapping

2013 ◽  
Vol 114 (18) ◽  
pp. 183102 ◽  
Author(s):  
Martin Steglich ◽  
Matthias Zilk ◽  
Astrid Bingel ◽  
Christian Patzig ◽  
Thomas Käsebier ◽  
...  
Keyword(s):  
Light Trapping ◽  
Normal Incidence ◽  
Black Silicon

Band‐edge absorption coefficients from photoluminescence in semiconductor multiple quantum wells

1989 ◽  
Vol 54 (14) ◽  
pp. 1356-1358 ◽  
Author(s):  
Alan Kost ◽  
H. C. Lee ◽  
Yao Zou ◽  
P. D. Dapkus ◽  
Elsa Garmire
Keyword(s):  
Quantum Wells ◽  
Band Edge ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Absorption Coefficients ◽  
Edge Absorption

Vanadium related near‐band‐edge absorption bands in three SiC polytypes

1995 ◽  
Vol 78 (5) ◽  
pp. 3160-3163 ◽  
Author(s):  
J. R. Jenny ◽  
M. Skowronski ◽  
W. C. Mitchel ◽  
H. M. Hobgood ◽  
R. C. Glass ◽  
...  
Keyword(s):  
Band Edge ◽  
Near Band Edge ◽  
Absorption Bands ◽  
Edge Absorption

scholarly journals A New Approach to Light Scattering from Nanotextured Interfaces For Silicon Thin-film Solar Cells

2010 ◽  
Vol 1245 ◽  
Author(s):  
Corsin Battaglia ◽  
Jordi Escarre ◽  
Karin Söderström ◽  
Franz-Josef Haug ◽  
Didier Dominé ◽  
...  
Keyword(s):  
Thin Film ◽  
Refractive Index ◽  
Solar Cells ◽  
Light Scattering ◽  
Light Trapping ◽  
Silicon Solar Cells ◽  
Silicon Thin Film ◽  
New Approach ◽  
Index Contrast ◽  
Trapping Performance

AbstractWe investigate the influence of refractive index contrast on the light scattering properties of nanotextured interfaces, which serve as front contact for p-i-n thin-film silicon solar cells. We here focus on ZnO surfaces with randomly oriented pyramidal features, known for their excellent light trapping performance. Transparent replicas, with a different refractive index, but practically identical morphology compared to their ZnO masters, were fabricated via nanoimprinting. Within the theoretical framework we recently proposed, we show how the angular and spectral dependence of light scattered by nanostructures with identical morphology but different refractive index may be related to each other allowing direct comparison of their light trapping potential within the device.

scholarly journals Electronic structure and anomalous band-edge absorption feature in multiferroicMnWO4: An optical spectroscopic study

2010 ◽  
Vol 81 (20) ◽  
Author(s):  
Woo Seok Choi ◽  
K. Taniguchi ◽  
S. J. Moon ◽  
S. S. A. Seo ◽  
T. Arima ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Spectroscopic Study ◽  
Band Edge ◽  
Absorption Feature ◽  
Edge Absorption

Fundamental band edge absorption in nominally undoped and doped 4H‐SiC

2007 ◽  
Vol 101 (12) ◽  
pp. 123521 ◽  
Author(s):  
P. Grivickas ◽  
V. Grivickas ◽  
J. Linnros ◽  
A. Galeckas
Keyword(s):  
Band Edge ◽  
Fundamental Band ◽  
Edge Absorption
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