Vanadium related near‐band‐edge absorption bands in three SiC polytypes

1995 ◽  
Vol 78 (5) ◽  
pp. 3160-3163 ◽  
Author(s):  
J. R. Jenny ◽  
M. Skowronski ◽  
W. C. Mitchel ◽  
H. M. Hobgood ◽  
R. C. Glass ◽  
...  
Keyword(s):  
Band Edge ◽  
Near Band Edge ◽  
Absorption Bands ◽  
Edge Absorption

Near band edge absorption spectra of narrow‐gap III–V semiconductor alloys

1996 ◽  
Vol 80 (7) ◽  
pp. 4045-4048 ◽  
Author(s):  
Srinivasan Krishnamurthy ◽  
A.‐B. Chen ◽  
A. Sher
Keyword(s):  
Absorption Spectra ◽  
Band Edge ◽  
Near Band Edge ◽  
Narrow Gap ◽  
Semiconductor Alloys ◽  
Edge Absorption

Near‐band‐edge absorption and positron trapping under illumination in semi‐insulating GaAs: Role of As vacancies

1995 ◽  
Vol 66 (19) ◽  
pp. 2534-2536 ◽  
Author(s):  
C. Le Berre ◽  
C. Corbel ◽  
R. Mih ◽  
M. R. Brozel ◽  
S. Tüzemen ◽  
...  
Keyword(s):  
Band Edge ◽  
Near Band Edge ◽  
Edge Absorption ◽  
Positron Trapping

Near-Band-Edge Photoluminescence of Sulfur-Doped GaAs Prepared by Liquid Phase Epitaxy

1995 ◽  
Vol 34 (Part 1, No. 1) ◽  
pp. 42-47 ◽  
Author(s):  
Gwo-Cherng Jiang ◽  
Yih Chang ◽  
Liann-Be Chang ◽  
Yung-Der Juang ◽  
SuLu
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Band Edge ◽  
Near Band Edge

Photoluminescence excitation spectroscopy of GaAs:Er,O in the near‐band‐edge region

1996 ◽  
Vol 79 (11) ◽  
pp. 8682-8687 ◽  
Author(s):  
R. A. Hogg ◽  
K. Takahei ◽  
A. Taguchi
Keyword(s):  
Band Edge ◽  
Near Band Edge ◽  
Edge Region ◽  
Photoluminescence Excitation

Effects of electron–phonon interaction and chemical shift on near-band-edge recombination in GaN

2002 ◽  
Vol 91 (12) ◽  
pp. 9827 ◽  
Author(s):  
M. Germain ◽  
E. Kartheuser ◽  
A. L. Gurskii ◽  
E. V. Lutsenko ◽  
I. P. Marko ◽  
...  
Keyword(s):  
Chemical Shift ◽  
Band Edge ◽  
Near Band Edge ◽  
Phonon Interaction ◽  
Electron Phonon Interaction

The Effects of Composition on the Spectral Loss Characteristics of SiGe Planar Waveguide Structures

1992 ◽  
Vol 281 ◽  
Author(s):  
Yang Zuoya ◽  
B. L. Weiss ◽  
G. Shao ◽  
F. Namavar
Keyword(s):  
Optical Properties ◽  
Planar Waveguide ◽  
Waveguide Structure ◽  
Propagation Loss ◽  
Band Edge ◽  
Optical Confinement ◽  
Structural And Optical Properties ◽  
Edge Absorption

ABSTRACTThe effect of the Si:Ge ratio in SiGe/Si heterostructures on the structural and optical properties of SiGe/Si planar waveguide are reported here for Ge concentrations from 1 to 33.6%. The high propagation loss at 1.15 pm is due to band edge absorption, which increases as the Ge concentration increases, while the loss at longer wavelengths (1.523 pm) increases with decreasing Si concentration, due to the reduced optical confinement of the waveguide structure.

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