Fundamental band edge absorption in nominally undoped and doped 4H‐SiC

2007 ◽  
Vol 101 (12) ◽  
pp. 123521 ◽  
Author(s):  
P. Grivickas ◽  
V. Grivickas ◽  
J. Linnros ◽  
A. Galeckas
1992 ◽  
Vol 281 ◽  
Author(s):  
Yang Zuoya ◽  
B. L. Weiss ◽  
G. Shao ◽  
F. Namavar

ABSTRACTThe effect of the Si:Ge ratio in SiGe/Si heterostructures on the structural and optical properties of SiGe/Si planar waveguide are reported here for Ge concentrations from 1 to 33.6%. The high propagation loss at 1.15 pm is due to band edge absorption, which increases as the Ge concentration increases, while the loss at longer wavelengths (1.523 pm) increases with decreasing Si concentration, due to the reduced optical confinement of the waveguide structure.


2003 ◽  
Vol 93 (11) ◽  
pp. 8939-8944 ◽  
Author(s):  
C. Rincón ◽  
S. M. Wasim ◽  
G. Marı́n ◽  
G. Sánchez Pérez

1989 ◽  
Vol 54 (14) ◽  
pp. 1356-1358 ◽  
Author(s):  
Alan Kost ◽  
H. C. Lee ◽  
Yao Zou ◽  
P. D. Dapkus ◽  
Elsa Garmire

1995 ◽  
Vol 78 (5) ◽  
pp. 3160-3163 ◽  
Author(s):  
J. R. Jenny ◽  
M. Skowronski ◽  
W. C. Mitchel ◽  
H. M. Hobgood ◽  
R. C. Glass ◽  
...  

2010 ◽  
Vol 81 (20) ◽  
Author(s):  
Woo Seok Choi ◽  
K. Taniguchi ◽  
S. J. Moon ◽  
S. S. A. Seo ◽  
T. Arima ◽  
...  

2021 ◽  
Vol 538 ◽  
pp. 147803
Author(s):  
Valerio Apicella ◽  
Teslim Ayinde Fasasi ◽  
Hon Fai Wong ◽  
Dennis C.W. Leung ◽  
Antonio Ruotolo

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