High-Performance Organic Electrochemical Transistors with Nanoscale Channel Length and Their Application to Artificial Synapse

2020 ◽  
Vol 12 (44) ◽  
pp. 49915-49925
Author(s):  
Yujie Yan ◽  
Qizhen Chen ◽  
Xiaomin Wu ◽  
Xiumei Wang ◽  
Enlong Li ◽  
...  
Keyword(s):  
High Performance ◽  
Channel Length ◽  
Artificial Synapse ◽  
Organic Electrochemical Transistors

High-Performance Vertical Organic Transistors of Sub-5 nm Channel Length

Nano Letters ◽  
2021 ◽  
Author(s):  
Jakob Lenz ◽  
Anna Monika Seiler ◽  
Fabian Rudolf Geisenhof ◽  
Felix Winterer ◽  
Kenji Watanabe ◽  
...  
Keyword(s):  
High Performance ◽  
Channel Length ◽  
Organic Transistors

scholarly journals Impact of Mole Fraction Variation on Nanoscale SiGe Hybrid FinFET on Insulator

2019 ◽  
Vol 8 (12S2) ◽  
pp. 61-66
Keyword(s):  
Band Gap ◽  
Mole Fraction ◽  
High Performance ◽  
Device Simulation ◽  
Channel Length ◽  
Gate Length ◽  
Electrical Characteristics ◽  
Simulation Results ◽  
High Performance Application ◽  
Device Modelling

This work investigates the performance of SiGe Hybrid JunctionLess FinFET (HJLFinFET) on insulator with different mole fraction x. The band gap difference for different mole fractions are explored. Impact of electrical characteristics and SCE of HJLFinFET are analyzed with fin width 10nm and varying gate length from 5nm-40nm for different mole fraction. Synopsys Sentaurus TCAD tool(sprocess and sdevice) are used in Device modelling and device simulation. Simulation results shows improvement in On current, DIBL and SS. For high performance application SiGe with mole fraction less than 0.3 at channel length less than 10nm are suitable because of the bandgap value is similar to silicon.

Flexible, high mobility short-channel organic thin film transistors and logic circuits based on 4H-21DNTT

2021 ◽  
Author(s):  
Anubha Bilgaiyan ◽  
Seung-Il Cho ◽  
Miho Abiko ◽  
Kaori Watanabe ◽  
Makoto Mizukami
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Channel Length ◽  
Logic Circuits ◽  
Organic Thin Film Transistors ◽  
Limiting Factors ◽  
Organic Thin Film ◽  
Short Channel ◽  
Inverter Circuit

Abstract The low mobility and large contact resistance in organic thin-film transistors (OTFTs) are the two major limiting factors in the development of high-performance organic logic circuits. Here, solution-processed high-performance OTFTs and circuits are reported with a polymeric gate dielectric and 6,6 bis (trans-4-butylcyclohexyl)-dinaphtho[2,1-b:2,1-f ]thieno[3,2-b]thiophene (4H-21DNTT) for the organic semiconducting layer. By optimizing and controlling the fabrication conditions, a record high saturation mobility of 8.8 cm2V− 1s− 1 was demonstrated as well as large on/off ratios (> 106) for relatively short channel lengths of 15 µm and an average carrier mobility of 10.5 cm2V-1s-1 for long channel length OTFTs (> 50 µm). The pseudo-CMOS inverter circuit with a channel length of 15 µm exhibited sharp switching characteristics with a high signal gain of 31.5 at a supply voltage of 20 V. In addition to the inverter circuit, NAND logic circuits were further investigated, which also exhibited remarkable logic characteristics, with a high gain, an operating frequency of 5 kHz, and a short propagation delay of 22.1 µs. The uniform and reproducible performance of 4H-21DNTT OTFTs show potential for large-area, low-cost real-world applications on industry-compatible bottom-contact substrates.

scholarly journals Balancing Ionic and Electronic Conduction for High‐Performance Organic Electrochemical Transistors

2020 ◽  
Vol 30 (11) ◽  
pp. 1907657 ◽  
Author(s):  
Achilleas Savva ◽  
Rawad Hallani ◽  
Camila Cendra ◽  
Jokubas Surgailis ◽  
Tania C. Hidalgo ◽  
...  
Keyword(s):  
High Performance ◽  
Electronic Conduction ◽  
Organic Electrochemical Transistors

High Performance Flexible Organic Phototransistors with Ultrashort Channel Length

ACS Photonics ◽  
2018 ◽  
Vol 5 (9) ◽  
pp. 3712-3722 ◽  
Author(s):  
Jianfeng Zhong ◽  
Xiaomin Wu ◽  
Shuqiong Lan ◽  
Yuan Fang ◽  
Huipeng Chen ◽  
...  
Keyword(s):  
High Performance ◽  
Channel Length

Designing High‐Performance Storage in HfO 2 /BiFeO 3 Memristor for Artificial Synapse Applications

2020 ◽  
Vol 6 (2) ◽  
pp. 1901012 ◽  
Author(s):  
Lei Liu ◽  
Wen Xiong ◽  
Yanxin Liu ◽  
Kaige Chen ◽  
Zhong Xu ◽  
...  
Keyword(s):  
High Performance ◽  
Artificial Synapse

scholarly journals Solvent Engineering for High‐Performance n‐Type Organic Electrochemical Transistors

2019 ◽  
Vol 5 (8) ◽  
pp. 1900249 ◽  
Author(s):  
Achilleas Savva ◽  
David Ohayon ◽  
Jokubas Surgailis ◽  
Alexandra F. Paterson ◽  
Tania C. Hidalgo ◽  
...  
Keyword(s):  
High Performance ◽  
Solvent Engineering ◽  
Organic Electrochemical Transistors

Fused Bithiophene Imide Dimer‐Based n‐Type Polymers for High‐Performance Organic Electrochemical Transistors

2021 ◽  
Author(s):  
Kui Feng ◽  
Wentao Shan ◽  
Suxiang Ma ◽  
Ziang Wu ◽  
Jianhua Chen ◽  
...  
Keyword(s):  
High Performance ◽  
Organic Electrochemical Transistors
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