scholarly journals Balancing Ionic and Electronic Conduction for High‐Performance Organic Electrochemical Transistors

2020 ◽  
Vol 30 (11) ◽  
pp. 1907657 ◽  
Author(s):  
Achilleas Savva ◽  
Rawad Hallani ◽  
Camila Cendra ◽  
Jokubas Surgailis ◽  
Tania C. Hidalgo ◽  
...  
Keyword(s):  
High Performance ◽  
Electronic Conduction ◽  
Organic Electrochemical Transistors

High-Performance Organic Electrochemical Transistors with Nanoscale Channel Length and Their Application to Artificial Synapse

2020 ◽  
Vol 12 (44) ◽  
pp. 49915-49925
Author(s):  
Yujie Yan ◽  
Qizhen Chen ◽  
Xiaomin Wu ◽  
Xiumei Wang ◽  
Enlong Li ◽  
...  
Keyword(s):  
High Performance ◽  
Channel Length ◽  
Artificial Synapse ◽  
Organic Electrochemical Transistors

scholarly journals Solvent Engineering for High‐Performance n‐Type Organic Electrochemical Transistors

2019 ◽  
Vol 5 (8) ◽  
pp. 1900249 ◽  
Author(s):  
Achilleas Savva ◽  
David Ohayon ◽  
Jokubas Surgailis ◽  
Alexandra F. Paterson ◽  
Tania C. Hidalgo ◽  
...  
Keyword(s):  
High Performance ◽  
Solvent Engineering ◽  
Organic Electrochemical Transistors

Fused Bithiophene Imide Dimer‐Based n‐Type Polymers for High‐Performance Organic Electrochemical Transistors

2021 ◽  
Author(s):  
Kui Feng ◽  
Wentao Shan ◽  
Suxiang Ma ◽  
Ziang Wu ◽  
Jianhua Chen ◽  
...  
Keyword(s):  
High Performance ◽  
Organic Electrochemical Transistors

High Performance Flexible Organic Electrochemical Transistors for Monitoring Cardiac Action Potential

2018 ◽  
Vol 7 (19) ◽  
pp. 1800304 ◽  
Author(s):  
Yuanying Liang ◽  
Mathis Ernst ◽  
Fabian Brings ◽  
Dmitry Kireev ◽  
Vanessa Maybeck ◽  
...  
Keyword(s):  
Action Potential ◽  
High Performance ◽  
Cardiac Action Potential ◽  
Cardiac Action ◽  
Organic Electrochemical Transistors

scholarly journals Engineering Donor-Acceptor Conjugated Polymers for High-Performance and Fast-Response Organic Electrochemical Transistors

2020 ◽  
Author(s):  
Hanyu Jia ◽  
Zhen Huang ◽  
Peiyun Li ◽  
song zhang ◽  
yunfei wang ◽  
...  
Keyword(s):  
Conjugated Polymers ◽  
High Performance ◽  
High Mobility ◽  
Hole Mobility ◽  
Fast Response ◽  
Ion Diffusion ◽  
Order Of Magnitude ◽  
Donor Acceptor ◽  
Systematic Solution ◽  
Organic Electrochemical Transistors

To date, high-performance organic electrochemical transistors (OECTs) are all based on polythiophene systems. Donor-acceptor (D-A) conjugated polymers are expected to be promising materials for OECTs owing to their high mobility and comparatively low crystallinity (good for ion diffusion). However, the OECT performance of D-A polymers lags far behind that of the polythiophenes. Here we synergistically engineered the backbone, side chain of a series of diketopyrrolopyrrole (DPP)-based D-A polymers and found that redox potential, molecular weight, solution processability, and film microstructures are essential to their performance. Among the polymers, P(bgDPP-MeOT2) exhibited a figure-of-merit (μC*) of 225 F cm<sup>–1</sup> V<sup>–1</sup> s<sup>–1</sup>, <a>over one order of magnitude higher than previously reported D-A polymers. Besides, the DPP polymers exhibited high hole mobility over 2 cm<sup>2</sup> V</a><sup>−1</sup> s<sup>−1</sup>, significantly higher than all D-A polymers employed in OECTs, leading to fast response OECTs with a record low turn-off response time of 30 μs. <a>The polymer also exhibited better stability than polythiophene systems with current retention of 98.8% over 700 electrochemical switching cycles.</a> This work provides a systematic solution to unleash the high-performance and fast-response nature of D-A polymers in OECTs.

scholarly journals Universal Spray-Deposition Process for Scalable, High-Performance, and Stable Organic Electrochemical Transistors

2020 ◽  
Vol 12 (18) ◽  
pp. 20757-20764 ◽  
Author(s):  
Xihu Wu ◽  
Abhijith Surendran ◽  
Maximilian Moser ◽  
Shuai Chen ◽  
Bening Tirta Muhammad ◽  
...  
Keyword(s):  
High Performance ◽  
Spray Deposition ◽  
Deposition Process ◽  
Organic Electrochemical Transistors

scholarly journals Molecular Design of Semiconducting Polymers for High-Performance Organic Electrochemical Transistors

2016 ◽  
Vol 138 (32) ◽  
pp. 10252-10259 ◽  
Author(s):  
Christian B. Nielsen ◽  
Alexander Giovannitti ◽  
Dan-Tiberiu Sbircea ◽  
Enrico Bandiello ◽  
Muhammad R. Niazi ◽  
...  
Keyword(s):  
High Performance ◽  
Molecular Design ◽  
Semiconducting Polymers ◽  
Organic Electrochemical Transistors

Mixed-Ionic-Electronic-Conduction (MIEC)-Based Access Devices for 3D Multilayer Crosspoint Memory

2015 ◽  
Vol 1729 ◽  
pp. 3-14
Author(s):  
Kumar Virwani ◽  
Geoffrey W. Burr ◽  
Pritish Narayanan ◽  
Bülent Kurdi
Keyword(s):  
High Performance ◽  
Memory Device ◽  
Electronic Conduction ◽  
Critical Dimensions ◽  
Access Device ◽  
Long Term Stability ◽  
Low Leakage ◽  
Hole Conduction ◽  
Non Volatile Memory ◽  
In Series

ABSTRACTA number of applications call for the organization of resistive non-volatile memory (NVM) into large, densely-packed crossbar arrays. While resistive-NVM devices often possess some degree of inherent nonlinearity (typically 3-30× contrast), the operation of large (>1000×1000 device) arrays at low power tends to require large (> 1e7) ON-to-OFF ratios between the currents passed at high and at low voltages. Such large nonlinearities can be implemented by including a distinct access device together with each of the state-bearing resistive-NVM elements. While such an access device need not store data, its list of requirements is almost as challenging as the specifications demanded of the memory device.We review our work on high-performance access devices based on Cu-containing Mixed-Ionic-Electronic Conduction (MIEC) materials [1–7]. (This version focuses only on the MIEC-based access device itself; previously-published longer versions of this work [8–10] also include more extensive surveys of competing devices as well.) These devices require only the low processing temperatures of the Back-End-Of-the-Line (BEOL), making them highly suitable for implementing multi-layer crossbar arrays. MIEC-based access devices offer large ON/OFF ratios (>1e7), a significant voltage margin Vm (over which current < 10nA), and ultra-low leakage (<10pA), while also offering the high current densities needed for PCM and the fully bipolar operation needed for high-performance RRAM. Scalability to critical dimensions (CD) <30nm and thicknesses <15nm, tight distributions and 100% yield in large (512kBit) arrays, long-term stability of the ultra-low leakage states, and sub-50ns turn-ON times have all been demonstrated. Numerical modeling of these MIEC-based access devices shows that their operation depends on Cu+ mediated hole conduction. Circuit simulations reveal that while scaled MIEC devices are suitable for large crossbar arrays of resistive-NVM devices with low (<1.2V) switching voltages, a compact vertical stack of two MIEC devices in series could support large crossbar arrays for switching voltages up to 2.5V.

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