scholarly journals P2EM.3 - High-performance sensors based on organic electrochemical transistors with various gate electrodes

2018 ◽  
Author(s):  
S. Lin ◽  
J. Liao
Keyword(s):  
High Performance ◽  
Gate Electrodes ◽  
Organic Electrochemical Transistors

scholarly journals 27.2: Invited Paper: Towards High Performance Gate Electrodes: Resistance Reduction in Molybdenum Films by Seed Layer Application

2021 ◽  
Vol 52 (S1) ◽  
pp. 170-174
Author(s):  
Hennrik Schmidt ◽  
Harald Koestenbauer ◽  
Dominik Lorenz ◽  
Christian Linke ◽  
Enrico Franzke ◽  
...  
Keyword(s):  
Seed Layer ◽  
High Performance ◽  
Gate Electrodes ◽  
Resistance Reduction

(Invited) Organic Electrochemical Transistors with Plasmonic Gate Electrodes

2021 ◽  
Vol MA2021-02 (30) ◽  
pp. 907-907
Author(s):  
Jayan Thomas ◽  
Jinxin Li ◽  
Sahil Ghate ◽  
Madiyar Foram
Keyword(s):  
Gate Electrodes ◽  
Organic Electrochemical Transistors

High-Performance Organic Electrochemical Transistors with Nanoscale Channel Length and Their Application to Artificial Synapse

2020 ◽  
Vol 12 (44) ◽  
pp. 49915-49925
Author(s):  
Yujie Yan ◽  
Qizhen Chen ◽  
Xiaomin Wu ◽  
Xiumei Wang ◽  
Enlong Li ◽  
...  
Keyword(s):  
High Performance ◽  
Channel Length ◽  
Artificial Synapse ◽  
Organic Electrochemical Transistors

High Performance Organic Field-Effect Transistors and Integrated Inverters

2001 ◽  
Vol 665 ◽  
Author(s):  
A. Ullmann ◽  
J. Ficker ◽  
W. Fix ◽  
H. Rost ◽  
W. Clemens ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Low Cost ◽  
Drain Current ◽  
Organic Field Effect Transistors ◽  
Metal Contacts ◽  
Gate Electrodes ◽  
Polymer Semiconductors ◽  
Set Up

ABSTRACTIntegrated plastic circuits (IPCs) will become an integral component of future low cost electronics. For low cost processes IPCs have to be made of all-polymer Transistors. We present our recent results on fabrication of Organic Field-Effect Transistors (OFETs) and integrated inverters. Top-gate transistors were fabricated using polymer semiconductors and insulators. The source-drain structures were defined by standard lithography of Au on a flexible plastic film, and on top of these electrodes, poly(3-alkylthiophene) (P3AT) as semiconductor, and poly(4-hydroxystyrene) (PHS) as insulator were homogeneously deposited by spin-coating. The gate electrodes consist of metal contacts. With this simple set-up, the transistors exhibit excellent electric performance with a high source-drain current at source - drain and gate voltages below 30V. The characteristics show very good saturation behaviour for low biases and are comparable to results published for precursor pentacene. With this setup we obtain a mobility of 0.2cm2/Vs for P3AT. Furthermore, we discuss organic integrated inverters exhibiting logic capability. All devices show shelf-lives of several months without encapsulation.

scholarly journals Balancing Ionic and Electronic Conduction for High‐Performance Organic Electrochemical Transistors

2020 ◽  
Vol 30 (11) ◽  
pp. 1907657 ◽  
Author(s):  
Achilleas Savva ◽  
Rawad Hallani ◽  
Camila Cendra ◽  
Jokubas Surgailis ◽  
Tania C. Hidalgo ◽  
...  
Keyword(s):  
High Performance ◽  
Electronic Conduction ◽  
Organic Electrochemical Transistors

scholarly journals Solvent Engineering for High‐Performance n‐Type Organic Electrochemical Transistors

2019 ◽  
Vol 5 (8) ◽  
pp. 1900249 ◽  
Author(s):  
Achilleas Savva ◽  
David Ohayon ◽  
Jokubas Surgailis ◽  
Alexandra F. Paterson ◽  
Tania C. Hidalgo ◽  
...  
Keyword(s):  
High Performance ◽  
Solvent Engineering ◽  
Organic Electrochemical Transistors

Fused Bithiophene Imide Dimer‐Based n‐Type Polymers for High‐Performance Organic Electrochemical Transistors

2021 ◽  
Author(s):  
Kui Feng ◽  
Wentao Shan ◽  
Suxiang Ma ◽  
Ziang Wu ◽  
Jianhua Chen ◽  
...  
Keyword(s):  
High Performance ◽  
Organic Electrochemical Transistors
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