Porous Membranes as Sacrificial Layers Enabling Conformal Chemical Vapor Deposition Involving Multiple Film-Forming Species

2020 ◽  
Vol 12 (45) ◽  
pp. 51016-51025
Author(s):  
Kohei Shima ◽  
Yuichi Funato ◽  
Noboru Sato ◽  
Yasuyuki Fukushima ◽  
Takeshi Momose ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Porous Membranes ◽  
Film Forming ◽  
Sacrificial Layers

Separate evaluation of multiple film-forming species in chemical vapor deposition of SiC using high aspect-ratio microchannels

2017 ◽  
Vol 56 (6S2) ◽  
pp. 06HE02 ◽  
Author(s):  
Kohei Shima ◽  
Noboru Sato ◽  
Yuichi Funato ◽  
Yasuyuki Fukushima ◽  
Takeshi Momose ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Aspect Ratio ◽  
Vapor Deposition ◽  
High Aspect Ratio ◽  
Chemical Vapor ◽  
Film Forming

Effects of Substrate Bias on Tribological Properties of Diamondlike Carbon Thin Films Deposited Via Microwave-Excited Plasma-Enhanced Chemical Vapor Deposition

2016 ◽  
Vol 138 (3) ◽  
Author(s):  
Nay Win Khun ◽  
Anne Neville ◽  
Ivan Kolev ◽  
Hongyuan Zhao
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Substrate Bias ◽  
Deposition Parameters ◽  
Film Forming ◽  
Diamondlike Carbon ◽  
Steel Substrates ◽  
Negative Substrate Bias

In this study, the structure and tribological performance of the diamondlike carbon (DLC) films were related to deposition parameters. The feasibility of the microwave-excited plasma-enhanced chemical vapor deposition (μW-PECVD) as a process to produce good quality DLC films was the focus. The DLC films were deposited on the steel substrates with a tungsten carbide interlayer via μW-PECVD. The negative substrate bias used during the film deposition was varied. The Raman results revealed that the increased negative substrate bias increased the sp3 bonding in the DLC films as a result of the increased kinetic energy of film-forming ions during the film deposition. The tribological results clearly indicated that the friction and wear of the DLC-coated steel samples against a 100Cr6 steel ball significantly decreased with increased negative substrate bias due to the significantly improved wear resistance of the DLC films.

Conversion of tetraethoxysilane (TEOS) to silica film-forming precursors in atomic oxygen-induced chemical vapor deposition

1996 ◽  
Vol 2 (6) ◽  
pp. 285-291 ◽  
Author(s):  
Aleksander M. Wróbel ◽  
Agnieszka Walkiewicz-Pietrzykowska ◽  
Marek Stasiak ◽  
Józef Kulpiúski
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atomic Oxygen ◽  
Chemical Vapor ◽  
Silica Film ◽  
Film Forming

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

The relaxation of compressive biaxial strains in SOS via microtwins

1989 ◽  
Vol 47 ◽  
pp. 608-609
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Partial Dislocation ◽  
Molecular Beam ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

Coating of continuous carbon fibers with double layers by chemical vapor deposition

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-885-Pr3-892 ◽  
Author(s):  
N. Popovska ◽  
S. Schmidt ◽  
E. Edelmann ◽  
V. K. Wunder ◽  
H. Gerhard ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Fibers ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Double Layers
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