Remote hydrogen plasma chemical vapor deposition using an organopentasilane cluster as a novel film‐forming precursor: Mechanism of the activation step

1994 ◽  
Vol 76 (1) ◽  
pp. 558-562 ◽  
Author(s):  
A. M. Wrobel ◽  
S. Wickramanayaka ◽  
Y. Hatanaka
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Film Forming

scholarly journals Synthesis of Multiwalled Carbon Nanotubes on Stainless Steel by Atmospheric Pressure Microwave Plasma Chemical Vapor Deposition

2020 ◽  
Vol 10 (13) ◽  
pp. 4468 ◽  
Author(s):  
Dashuai Li ◽  
Ling Tong ◽  
Bo Gao
Keyword(s):  
Carbon Nanotubes ◽  
Stainless Steel ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Microwave Plasma ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition

In this paper, we synthesize carbon nanotubes (CNTs) by using atmospheric pressure microwave plasma chemical vapor deposition (AMPCVD). In AMPCVD, a coaxial plasma generator provides 200 W 2.45 GHz microwave plasma at atmospheric pressure to decompose the precursor. A high-temperature tube furnace provides a suitable growth temperature for the deposition of CNTs. Optical fiber spectroscopy was used to measure the compositions of the argon–ethanol–hydrogen plasma. A comparative experiment of ethanol precursor decomposition, with and without plasma, was carried out to measure the role of the microwave plasma, showing that the 200 W microwave plasma can decompose 99% of ethanol precursor at any furnace temperature. CNTs were prepared on a stainless steel substrate by using the technology to decompose ethanol with the plasma power of 200 W at the temperatures of 500, 600, 700, and 800 °C; CNT growth increases with the increase in temperature. Prepared CNTs, analyzed by SEM and HRTEM, were shown to be multiwalled and tangled with each other. The measurement of XPS and Raman spectroscopy indicates that many oxygenated functional groups have attached to the surface of the CNTs.

Remote Hydrogen Plasma Chemical Vapor Deposition from (Dimethylsilyl)(trimethylsilyl)methane. 2. Property−Structure Relationships for Resulting Silicon−Carbon Films

2003 ◽  
Vol 15 (8) ◽  
pp. 1757-1762 ◽  
Author(s):  
A. M. Wróbel ◽  
A. Walkiewicz-Pietrzykowska ◽  
D. M. Bieliński ◽  
J. E. Klemberg-Sapieha ◽  
Y. Nakanishi ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Plasma Chemical ◽  
Plasma Chemical Vapor Deposition ◽  
Silicon Carbon

Analysis of hydrogen plasma in a microwave plasma chemical vapor deposition reactor

2016 ◽  
Vol 119 (11) ◽  
pp. 113301 ◽  
Author(s):  
G. Shivkumar ◽  
S. S. Tholeti ◽  
M. A. Alrefae ◽  
T. S. Fisher ◽  
A. A. Alexeenko
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Chemical Vapor Deposition Reactor ◽  
Plasma Chemical Vapor Deposition

NITROGEN INCORPORATED HYDROGENATED AMORPHOUS CARBON THIN FILMS DEPOSITED BY MICROWAVE SURFACE-WAVE PLASMA CHEMICAL VAPOR DEPOSITION

2009 ◽  
Vol 23 (09) ◽  
pp. 2159-2165 ◽  
Author(s):  
SUDIP ADHIKARI ◽  
MASAYOSHI UMENO
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Surface Wave ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Hydrogenated Amorphous Carbon ◽  
Plasma Chemical Vapor Deposition ◽  
Hydrogenated Amorphous

Nitrogen incorporated hydrogenated amorphous carbon (a-C:N:H) thin films have been deposited by microwave surface-wave plasma chemical vapor deposition on silicon and quartz substrates, using helium, methane and nitrogen ( N 2) as plasma source. The deposited a-C:N:H films were characterized by their optical, structural and electrical properties through UV/VIS/NIR spectroscopy, Raman spectroscopy, atomic force microscope and current-voltage characteristics. The optical band gap decreased gently from 3.0 eV to 2.5 eV with increasing N 2 concentration in the films. The a-C:N:H film shows significantly higher electrical conductivity compared to that of N 2-free a-C:H film.

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