Passivation Studies on Single-Junction GaAs Thin Film Solar Cells on Flexible Metal Tapes for Low-Cost Photovoltaics

2019 ◽  
Vol 2 (5) ◽  
pp. 3114-3119 ◽  
Author(s):  
Devendra Khatiwada ◽  
Monika Rathi ◽  
Pavel Dutta ◽  
Sicong Sun ◽  
Carlos Favela ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Low Cost ◽  
Thin Film Solar Cells ◽  
Single Junction ◽  
Flexible Metal

scholarly journals Wide-Range Enhancement of Spectral Response by Highly Conductive and Transparentμc-SiOx:H Doped Layers inμc-Si:H and a-Si:H/μc-Si:H Thin-Film Solar Cells

2016 ◽  
Vol 2016 ◽  
pp. 1-8
Author(s):  
Pei-Ling Chen ◽  
Po-Wei Chen ◽  
Min-Wen Hsiao ◽  
Cheng-Hang Hsu ◽  
Chuang-Chuang Tsai
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Spectral Response ◽  
Wavelength Region ◽  
Thin Film Solar Cells ◽  
Window Layer ◽  
Efficiency Gain ◽  
Silicon Thin Film ◽  
Single Junction ◽  
Wide Range

The enhancement of optical absorption of silicon thin-film solar cells by the p- and n-typeμc-SiOx:H as doped and functional layers was presented. The effects of deposition conditions and oxygen content on optical, electrical, and structural properties ofμc-SiOx:H films were also discussed. Regarding the dopedμc-SiOx:H films, the wide optical band gap (E04) of 2.33 eV while maintaining a high conductivity of 0.2 S/cm could be obtained with oxygen incorporation of 20 at.%. Compared to the conventionalμc-Si:H(p) as window layer inμc-Si:H single-junction solar cells, the application ofμc-SiOx:H(p) increased theVOCand led to a significant enhancement in the short-wavelength spectral response. Meanwhile, the employment ofμc-SiOx:H(n) instead of conventional ITO as back reflecting layer (BRL) enhanced the external quantum efficiency (EQE) ofμc-Si:H single-junction cell in the long-wavelength region, leading to a relative efficiency gain of 10%. Compared to the reference cell, the optimized a-Si:H/μc-Si:H tandem cell by applying p- and n-typeμc-SiOx:H films achieved aVOCof 1.37 V,JSCof 10.55 mA/cm2, FF of 73.67%, and efficiency of 10.51%, which was a relative enhancement of 16%.

scholarly journals Solution-Processed CdTe Thin-Film Solar Cells Using ZnSe Nanocrystal as a Buffer Layer

2018 ◽  
Vol 8 (7) ◽  
pp. 1195 ◽  
Author(s):  
Yanru Chen ◽  
Xianglin Mei ◽  
Xiaolin Liu ◽  
Bin Wu ◽  
Junfeng Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Buffer Layer ◽  
High Efficiency ◽  
Low Cost ◽  
Buffer Layers ◽  
Thin Film Solar Cells ◽  
Solution Processed ◽  
Cdte Nanocrystal ◽  
First Time

The CdTe nanocrystal (NC) is an outstanding, low-cost photovoltaic material for highly efficient solution-processed thin-film solar cells. Currently, most CdTe NC thin-film solar cells are based on CdSe, ZnO, or CdS buffer layers. In this study, a wide bandgap and Cd-free ZnSe NC is introduced for the first time as the buffer layer for all solution-processed CdTe/ZnSe NC hetero-junction thin-film solar cells with a configuration of ITO/ZnO/ZnSe/CdTe/MoOx/Au. The dependence of the thickness of the ZnSe NC film, the annealing temperature and the chemical treatment on the performance of NC solar cells are investigated and discussed in detail. We further develop a ligand-exchanging strategy that involves 1,2-ethanedithiol (EDT) during the fabrication of ZnSe NC film. An improved power conversion efficiency (PCE) of 3.58% is obtained, which is increased by 16.6% when compared to a device without the EDT treatment. We believe that using ZnSe NC as the buffer layer holds the potential for developing high-efficiency, low cost, and stable CdTe NC-based solar cells.

Improvement of Single-Junction a-Si:H Thin-Film Solar Cells Toward 10% Efficiency

2011 ◽  
Vol 1321 ◽  
Author(s):  
P. H. Cheng ◽  
S. W. Liang ◽  
Y. P. Lin ◽  
H. J. Hsu ◽  
C. H. Hsu ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Amorphous Silicon ◽  
Chemical Vapor ◽  
Thin Film Solar Cells ◽  
Window Layer ◽  
Electron Hole ◽  
Single Junction ◽  
Boron Doped ◽  
Hydrogenated Amorphous

ABSTRACTThe hydrogenated amorphous silicon (a-Si:H) single-junction thin-film solar cells were fabricated on SnO2:F-coated glasses by plasma-enhanced chemical vapor deposition (PECVD) system. The boron-doped amorphous silicon carbide (a-SiC:H) was served as the window layer (p-layer) and the undoped a-SiC:H was used as a buffer layer (b-layer). The optimization of the p/b/i/n thin-films in a-Si:H solar cells have been carried out and discussed. Considering the effects of light absorption, electron-hole extraction and light-induced degradation, the thicknesses of p, b, n and i layers have been optimized. The optimal a-Si:H thin-film solar cell having an efficiency of 9.46% was achieved, with VOC=906 mV, JSC=14.42 mA/cm2 and FF=72.36%.

CuInSe2 low-cost thin-film solar cells made from commercial elemental metallic nanoparticles

2010 ◽  
Vol 4 (3-4) ◽  
pp. 58-60 ◽  
Author(s):  
Jan Ungelenk ◽  
Veronika Haug ◽  
Aina Quintilla ◽  
Erik Ahlswede
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Metallic Nanoparticles ◽  
Low Cost ◽  
Thin Film Solar Cells
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