The CdTe nanocrystal (NC) is an outstanding, low-cost photovoltaic material for highly efficient solution-processed thin-film solar cells. Currently, most CdTe NC thin-film solar cells are based on CdSe, ZnO, or CdS buffer layers. In this study, a wide bandgap and Cd-free ZnSe NC is introduced for the first time as the buffer layer for all solution-processed CdTe/ZnSe NC hetero-junction thin-film solar cells with a configuration of ITO/ZnO/ZnSe/CdTe/MoOx/Au. The dependence of the thickness of the ZnSe NC film, the annealing temperature and the chemical treatment on the performance of NC solar cells are investigated and discussed in detail. We further develop a ligand-exchanging strategy that involves 1,2-ethanedithiol (EDT) during the fabrication of ZnSe NC film. An improved power conversion efficiency (PCE) of 3.58% is obtained, which is increased by 16.6% when compared to a device without the EDT treatment. We believe that using ZnSe NC as the buffer layer holds the potential for developing high-efficiency, low cost, and stable CdTe NC-based solar cells.
Cu(In,Ga)Se2 thin-film solar cells based on a simple sputtered alloy precursor and a low-cost selenization step