Improvement of Single-Junction a-Si:H Thin-Film Solar Cells Toward 10% Efficiency

2011 ◽  
Vol 1321 ◽  
Author(s):  
P. H. Cheng ◽  
S. W. Liang ◽  
Y. P. Lin ◽  
H. J. Hsu ◽  
C. H. Hsu ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Amorphous Silicon ◽  
Chemical Vapor ◽  
Thin Film Solar Cells ◽  
Window Layer ◽  
Electron Hole ◽  
Single Junction ◽  
Boron Doped ◽  
Hydrogenated Amorphous

ABSTRACTThe hydrogenated amorphous silicon (a-Si:H) single-junction thin-film solar cells were fabricated on SnO2:F-coated glasses by plasma-enhanced chemical vapor deposition (PECVD) system. The boron-doped amorphous silicon carbide (a-SiC:H) was served as the window layer (p-layer) and the undoped a-SiC:H was used as a buffer layer (b-layer). The optimization of the p/b/i/n thin-films in a-Si:H solar cells have been carried out and discussed. Considering the effects of light absorption, electron-hole extraction and light-induced degradation, the thicknesses of p, b, n and i layers have been optimized. The optimal a-Si:H thin-film solar cell having an efficiency of 9.46% was achieved, with VOC=906 mV, JSC=14.42 mA/cm2 and FF=72.36%.

scholarly journals Wide-Range Enhancement of Spectral Response by Highly Conductive and Transparentμc-SiOx:H Doped Layers inμc-Si:H and a-Si:H/μc-Si:H Thin-Film Solar Cells

2016 ◽  
Vol 2016 ◽  
pp. 1-8
Author(s):  
Pei-Ling Chen ◽  
Po-Wei Chen ◽  
Min-Wen Hsiao ◽  
Cheng-Hang Hsu ◽  
Chuang-Chuang Tsai
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Spectral Response ◽  
Wavelength Region ◽  
Thin Film Solar Cells ◽  
Window Layer ◽  
Efficiency Gain ◽  
Silicon Thin Film ◽  
Single Junction ◽  
Wide Range

The enhancement of optical absorption of silicon thin-film solar cells by the p- and n-typeμc-SiOx:H as doped and functional layers was presented. The effects of deposition conditions and oxygen content on optical, electrical, and structural properties ofμc-SiOx:H films were also discussed. Regarding the dopedμc-SiOx:H films, the wide optical band gap (E04) of 2.33 eV while maintaining a high conductivity of 0.2 S/cm could be obtained with oxygen incorporation of 20 at.%. Compared to the conventionalμc-Si:H(p) as window layer inμc-Si:H single-junction solar cells, the application ofμc-SiOx:H(p) increased theVOCand led to a significant enhancement in the short-wavelength spectral response. Meanwhile, the employment ofμc-SiOx:H(n) instead of conventional ITO as back reflecting layer (BRL) enhanced the external quantum efficiency (EQE) ofμc-Si:H single-junction cell in the long-wavelength region, leading to a relative efficiency gain of 10%. Compared to the reference cell, the optimized a-Si:H/μc-Si:H tandem cell by applying p- and n-typeμc-SiOx:H films achieved aVOCof 1.37 V,JSCof 10.55 mA/cm2, FF of 73.67%, and efficiency of 10.51%, which was a relative enhancement of 16%.

Bias-induced instability in an intrinsic hydrogenated amorphous silicon layer for thin-film solar cells

2016 ◽  
Vol 82 ◽  
pp. 122-125
Author(s):  
Youngseok Lee ◽  
Cheolmin Park ◽  
Jinjoo Park ◽  
Donghyun Oh ◽  
Youn-Jung Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Layer ◽  
Thin Film Solar Cells ◽  
Hydrogenated Amorphous
Sign in / Sign up

Export Citation Format

Share Document